Metal gate with silicon sidewall spacers

Patent metadata

Field	Value
Publication number	US-9496402-B2
Application number	US-201514801319-A
Country	US
Kind code	B2
Filing date	Jul 16, 2015
Priority date	Oct 17, 2014
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

A method includes forming an opening in a dielectric to reveal a protruding semiconductor fin, forming a gate dielectric on sidewalls and a top surface of the protruding semiconductor fin, and forming a conductive diffusion barrier layer over the gate dielectric. The conductive diffusion barrier layer extends into the opening. The method further includes forming a silicon layer over the conductive diffusion barrier layer and extending into the opening, and performing a dry etch on the silicon layer to remove horizontal portions and vertical portions of the silicon layer. After the dry etch, a conductive layer is formed over the conductive diffusion barrier layer and extending into the opening.

First claim

What is claimed is:

1. A method comprising:
forming an opening in a dielectric to reveal a protruding semiconductor fin;
forming a gate dielectric on sidewalls and a top surface of the protruding semiconductor fin;
forming a conductive diffusion barrier layer over the gate dielectric, wherein the conductive diffusion barrier layer extends into the opening;
forming a silicon layer over the conductive diffusion barrier layer and extending into the opening;
performing a dry e…

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Fang Wen-Han
• Wu Po-Chi

Classifications

• H10P70/273

  Electricity · mapped topic

• H10P50/283

  Electricity · mapped topic

• H10P50/268

  Electricity · mapped topic

• H10D64/0134

  Electricity · mapped topic

• H10D84/834

  Electricity · mapped topic