Nanostructures, their use and process for their production

Patent metadata

Field	Value
Publication number	US-9496067-B2
Application number	US-201113583760-A
Country	US
Kind code	B2
Filing date	Mar 10, 2011
Priority date	Mar 10, 2010
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

A lubricating and shock absorbing materials are described, which are based on nanoparticles having the formula A 1-x -B x -chalcogenide. Processes for their manufacture are also described.

First claim

The invention claimed is:

1. A process for the manufacture of nanostructures each being of the formula
A 1-x -B x -chalcogenide

wherein
A is at least one of Mo, W, Re, Ti, Zr, Hf, Nb, Ta, Pt, Ru, Rh, In, Ga, WMo, or TiW;
B is selected from Si, Nb, Ta, W, Mo, Sc, Y, La, Hf, Ir, Mn, Ru, Re, Os, V, Au, Rh, Pd, Cr, Co, Fe and Ni; and
x≦0.3,

provided that within said nanostructure
A≠B;
x is not zero; and
B and B-chalcogenide are doped within the A 1-x -chalcogenide;
the process comprising:
providing A-oxide and B-oxide compositions, each in vapor phase, or in the solid phase under conditions permitting phase transformation into the vapor phase; or
providing A 1-z -B z -oxide composition (z≦0.01), in vapor phase, or in a solid phase under conditions permitting phase transformation into the vapor phase; and

permitting said A-oxide and B-oxide vapors or said A 1-z -B z -oxide vapors to flow together with a reducing agent carrying forming gas into a reaction chamber causing reduction of the A and B metals or transition metals and subsequent formation of said nanostructures.

2. The process according to claim 1 , wherein x is less than 0.01.

3. A process for the manufacture of nanostructures each being of the formula
A 1-x -B x -chalcogenide

wherein
A is at least one of Mo, W, Re, Ti, Zr, Hf, Nb, Ta, Pt, Ru, Rh, In, Ga, WMo, or TiW;
B is selected from Si, Nb, Ta, W, Mo, Sc, Y, La, Hf, Ir, Mn, Ru, Re, Os, V, Au, Rh, Pd, Cr, Co, Fe and Ni; and
x<0.3,

providing that within said nanostructure
A≠B;
x is not zero; and
B and B-chalcogenide are doped within the A 1-x -chalcogenide;
the process comprising:
providing A-chalcogenide, in vapor phase; and
permitting said A-chalcogenide vapor to flow together with a transport agent and a dopant precursor B-Y, wherein Y is selected from a halogen and a pnictide, in a reaction chamber under conditions that prevent or minimize back transport of atoms of said dopant, thereby causing doping of B into A-chalcogenide and formation of said nanostructures.

4. The process of claim 1 , wherein x is less than 0.005.

5. The process of claim 1 wherein x is between 0.005 and 0.01.

6. The process of claim 3 , wherein x is less than 0.005.

7. The process of claim 3 wherein x is between 0.005 and 0.01.

8. The process of claim 3 , wherein the transport agent is at least one halogen.

9. The process of claim 8 , wherein said halogen is chlorine, bromine or iodine.

10. The process of claim 3 , wherein the A-chalcogenide is provided in the solid phase under conditions permitting phase transformation into the vapor phase.

11. The process according to claim 3 , wherein the reaction chamber is a two zone chamber comprising a high temperature zone and a lower temperature zone, wherein the dopant precursor is fed into the high temperature zone and the A-chalcogenide is fed into the lower temperature zone.

12. The process according to claim 11 , wherein the maximal temperature of the high temperature zone is 800° C. and the high temperature zone and the lower temperature zone differ by a temperature exceeding 150° C.

13. The process of claim 1 , wherein said providing A-oxide and B-oxide compositions, in the solid phase under conditions permitting phase transformation into the vapor phase comprises:
providing at least one concentric crucible comprising an inner and an outer portions;
placing A-oxide composition in the outer portion of said crucible and B-oxide composition in the inner portion of said crucible, in the solid phase; and
permitting A-oxide and B-oxide to transform into vapors.

14. The process of claim 1 , wherein said flowing of said A-oxide and B-oxide vapors together with said reducing agent carrying forming gas further comprises flowing of a chalcogenide carrying reacting gas, thereby causing occurrence of reduction of A and B, followed by a reaction with said chalcogenide carrying reacting gas resulting in the formation of said nanostructures.

15. The process of claim 1 , wherein said providing A 1-x -B x -oxide composition in a solid phase under conditions permitting phase transformation into the vapor phase comprises placing said A 1-x -B x -oxide composition in the solid phase in a crucible within said reaction chamber.

16. The process of claim 1 , wherein said providing A 1-x -B x -oxide composition, in a solid phase under conditions permitting phase transformation into the vapor phase comprises:
mixing powders of A-oxide and of B-oxide;
treating said mixed powders, said treatment includes grinding or solvent addition or sonication or solvent drying or a combination thereof;
placing said mixed powders in at least one crucible;
inserting said at least one crucible into an auxiliary reactor;
heating said crucibles under nitrogen;
cooling down said crucibles, thus providing said A 1-x -B x -oxide composition.

Assignees

• Tenne Reshef
• Deepak Francis Leonard
• Cohen Hagai
• Cohen Sidney R
• Rosentsveig Rita
• Yadgarov Lena
• Yeda Res & Dev

Inventors

• Tenne Reshef
• Deepak Francis Leonard
• Cohen Hagai
• Cohen Sidney R
• Rosentsveig Rita
• Yadgarov Lena

Classifications

• H01B1/10 Primary

  sulfides · CPC title

• C01P2002/77

  by unit-cell parameters, atom positions or structure diagrams · CPC title

• C01P2004/04

  obtained by TEM, STEM, STM or AFM · CPC title

• C01P2002/52

  containing elements as dopants · CPC title

• C01P2006/40

  Electric properties · CPC title