Copper alloy for electric and electronic device, copper alloy sheet for electric and electronic device, conductive component for electric and electronic device, and terminal

US9496064B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9496064-B2
Application numberUS-201314762324-A
CountryUS
Kind codeB2
Filing dateJun 28, 2013
Priority dateJan 28, 2013
Publication dateNov 15, 2016
Grant dateNov 15, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A copper alloy for electric and electronic devices comprises 23 mass % to 36.5 mass % of Zn; 0.1 mass % to 0.9 mass % of Sn; 0.15 mass % to less than 1.0 mass % of Ni; 0.001 mass % to less than 0.10 mass % of Fe; 0.005 mass % to 0.1 mass % of P; and a balance including Cu and unavoidable impurities, in which 0.002≦Fe/Ni<0.7, 3<(Ni+Fe)/P<15, and 0.3<Sn/(Ni+Fe)<2.9, are satisfied by atomic ratio, and a fraction R{220} of the X-ray diffraction intensity from the {220} plane is 0.8 or less.

First claim

Opening claim text (preview).

The invention claimed is: 1. A copper alloy for electric and electronic devices, the copper alloy comprising: 23 mass % to 36.5 mass % of Zn; 0.1 mass % to 0.9 mass % of Sn; 0.2 mass % to less than 1.0 mass % of Ni; 0.001 mass % to less than 0.10 mass % of Fe; 0.005 mass % to 0.1 mass % of P; and a balance including Cu and unavoidable impurities, wherein a ratio Fe/Ni of a Fe content to a Ni content satisfies 0.002≦Fe/Ni<0.7 by atomic ratio, a ratio (Ni+Fe)/P of a total content (Ni+Fe) of Ni and Fe to a P content satisfies 3<(Ni+Fe)/P<15 by atomic ratio, a ratio Sn/(Ni+Fe) of a Sn content to the total content (Ni+Fe) of Ni and Fe satisfies 0.3<Sn/(Ni+Fe)<2.9 by atomic ratio, and R{220} is 0.8 or less, wherein an X-ray diffraction intensity from a {111} plane on a surface of the copper alloy is represented by I{111}, an X-ray diffraction intensity from a {200} plane on the surface of the copper alloy is represented by I{200}, an X-ray diffraction intensity from a {220} plane on the surface of the copper alloy is represented by I{220}, an X-ray diffraction intensity from a {311} plane on the surface of the copper alloy is represented by I{311}, and a fraction R{220} of the X-ray diffraction intensity from the {220} plane on the surface of the copper alloy is R{ 220}= I{ 220}/( I{ 111}+ I{ 200}+ I{ 220}+ I{ 311}). 2. The copper alloy for electric and electronic devices according to claim 1 , wherein the R{220} is in a range of 0.3 to 0.8. 3. The copper alloy for electric and electronic devices according to claim 1 , wherein the copper alloy has mechanical properties including a 0.2% yield strength of 300 MPa or higher. 4. The copper alloy for electric and electronic devices according to claim 2 , wherein the copper alloy has mechanical properties including a 0.2% yield strength of 300 MPa or higher. 5. A copper alloy sheet for electric and electronic devices, comprising: a sheet main body made of a rolled material formed of the copper alloy for electric and electronic devices according to claim 1 , wherein a thickness of the sheet main body is in a range of 0.05 mm to 1.0 mm. 6. A conductive component for electric and electronic devices comprising: the copper alloy sheet for electric and electronic devices according to claim 5 . 7. A terminal comprising: the copper alloy sheet for electric and electronic devices according to claim 5 . 8. The copper alloy sheet for electric and electronic devices according to claim 5 , further comprising: a Sn-plated layer formed on a surface of the sheet main body. 9. A conductive component for electric and electronic devices comprising: the copper alloy sheet for electric and electronic devices according to claim 8 . 10. A terminal comprising: the copper alloy sheet for electric and electronic devices according to claim 8 . 11. A conductive component for electric and electronic devices comprising: the copper alloy for electric and electronic devices according to claim 1 . 12. A terminal comprising: the copper alloy for electric and electronic devices according to claim 1 . 13. A copper alloy for electric and electronic devices, comprising: 23 mass % to 36.5 mass % of Zn; 0.1 mass % to 0.9 mass % of Sn; 0.2 mass % to less than 1.0 mass % of Ni; 0.001 mass % to less than 0.10 mass % of Fe; 0.001 mass % to less than 0.1 mass % of Co; 0.005 mass % to 0.1 mass % of P; and a balance including Cu and unavoidable impurities, wherein a ratio (Fe+Co)/Ni of a total content of Fe and Co to a Ni content satisfies 0.002≦(Fe+Co)/Ni<0.7 by atomic ratio, a ratio (Ni+Fe+Co)/P of a total content (Ni+Fe+Co) of Ni, Fe, and Co to a P content satisfies 3<(Ni+Fe+Co)/P<15 by atomic ratio, a ratio Sn/(Ni+Fe+Co) of a Sn content to the total content (Ni+Fe+Co) of Ni, Fe, and Co satisfies 0.3<Sn/(Ni+Fe+Co)<2.9 by atomic ratio, and R{220} is 0.8 or less, wherein an X-ray diffraction intensity from a {111} plane on a surface of the copper alloy is represented by I{111}, an X-ray diffraction intensity from a {200} plane on the surface of the copper alloy is represented by I{200}, an X-ray diffraction intensity from a {220} plane on the surface of the copper alloy is represented by I{220}, an X-ray diffraction intensity from a {311} plane on the surface of the copper alloy is represented by I{311}, and a fraction R{220} of the X-ray diffraction intensity from the {220} plane on the surface of the copper alloy is R{ 220}= I{ 220}/( I{ 111}+ I{ 200}+ I{ 220}+ I{ 311}). 14. The copper alloy for electric and electronic devices according to claim 13 , wherein the R{220} is in a range of 0.3 to 0.8. 15. The copper alloy for electric and electronic devices according to claim 13 , wherein the copper alloy has mechanical properties including a 0.2% yield strength of 300 MPa or higher. 16. The copper alloy for electric and electronic devices according to claim 14 , wherein the copper alloy has mechanical properties including a 0.2% yield strength of 300 MPa or higher.

Assignees

Inventors

Classifications

  • Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working (apparatus for mechanical working of metal B21, B23, B24) · CPC title

  • C22C9/04Primary

    with zinc as the next major constituent · CPC title

  • Next to Group IB metal-base component · CPC title

  • All metal or with adjacent metals · CPC title

  • H01B1/026Primary

    Alloys based on copper · CPC title

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What does patent US9496064B2 cover?
A copper alloy for electric and electronic devices comprises 23 mass % to 36.5 mass % of Zn; 0.1 mass % to 0.9 mass % of Sn; 0.15 mass % to less than 1.0 mass % of Ni; 0.001 mass % to less than 0.10 mass % of Fe; 0.005 mass % to 0.1 mass % of P; and a balance including Cu and unavoidable impurities, in which 0.002≦Fe/Ni<0.7, 3<(Ni+Fe)/P<15, and 0.3<Sn/(Ni+Fe)<2.9, are satisfied by atomic ratio,…
Who is the assignee on this patent?
Mitsubishi Materials Corp, Mitsubishi Shindo Kk
What technology area does this patent fall under?
Primary CPC classification C22C9/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).