Positive photosensitive composition, thin film transistor, and compound

Patent metadata

Field	Value
Publication number	US-9494861-B2
Application number	US-201314410438-A
Country	US
Kind code	B2
Filing date	Jul 2, 2013
Priority date	Jul 4, 2012
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

The present invention aims to provide positive photosensitive compositions that have excellent patterning properties and can exhibit excellent electrical insulation reliability when cured (as thin films). The positive photosensitive composition according to a first aspect of the present invention is characterized by including (A) a compound that contains an alkenyl group or a SiH group within a molecule and has a structure that decomposes in the presence of acid to generate an acidic group or a hydroxyl group; (B) a compound that contains a SiH group or an alkenyl group within a molecule; (C) a hydrosilylation catalyst; and (D) a photoacid generator.

First claim

The invention claimed is:

1. A positive photosensitive composition, comprising:
(A) a compound that contains an alkenyl group or a SiH group within a molecule and has a structure that decomposes in the presence of acid to generate an acidic group or a hydroxyl group;
(B) a compound that contains a SiH group or an alkenyl group within a molecule;
(C) a hydrosilylation catalyst; and
(D) a photoacid generator.

2. The positive photosensitive composition according to claim 1 ,
wherein the component (B) is a compound having no structure that decomposes in the presence of acid to generate an acidic group or a hydroxyl group.

3. The positive photosensitive composition according to claim 1 ,
wherein the component (A) is a compound that contains a SiH group within a molecule and has a structure that decomposes in the presence of acid to generate an acidic group or a hydroxyl group, and
the component (B) is a compound that contains an alkenyl group within a molecule.

4. The positive photosensitive composition according to claim 1 ,
wherein the structure that decomposes in the presence of acid to generate an acidic group or a hydroxyl group in the component (A) is a phenol structure with protected functionality or a carboxylic acid structure with protected functionality.

5. The positive photosensitive composition according to claim 4 ,
wherein the phenol structure with protected functionality is a bisphenol structure with protected functionality.

6. The positive photosensitive composition according to claim 5 ,
wherein the bisphenol structure with protected functionality is a bisphenol structure whose functionality is protected by a trialkylsilyl group or a butoxycarbonyl group.

7. The positive photosensitive composition according to claim 5 ,
wherein the bisphenol structure is a bisphenol S structure or a bisphenol F structure.

8. The positive photosensitive composition according to claim 4 ,
wherein the carboxylic acid structure with protected functionality contains an acetal bond or a carboxylic acid tertiary ester bond.

9. The positive photosensitive composition according to claim 8 ,
wherein the structure containing a carboxylic acid tertiary ester bond is protected by an aliphatic ring structure.

10. The positive photosensitive composition according to claim 9 ,
wherein the aliphatic ring structure is an adamantane structure.

11. The positive photosensitive composition according to claim 1 ,
wherein at least one of the component (A) and the component (B) is a siloxane-based compound.

12. The positive photosensitive composition according to claim 11 ,
wherein of the components (A) and (B), at least the component (A) is a siloxane-based compound, and the component (A) has a cyclic siloxane structure.

13. The positive photosensitive composition according to claim 11 ,
wherein the siloxane-based compound contains a polyhedral polysiloxane structure formed of 6 to 24 Si atoms.

14. The positive photosensitive composition according to claim 13 ,
wherein the polyhedral polysiloxane structure is obtained by a hydrosilylation reaction of a SiH group-containing siloxane compound and an alkenyl group-containing polyhedral polysiloxane compound formed of 6 to 24 Si atoms.

15. The positive photosensitive composition according to claim 13 ,
wherein the polyhedral polysiloxane structure is obtained by a hydrosilylation reaction of a polyhedral polysiloxane compound represented by formula (I) and a cyclic siloxane compound represented by formula (II), the formulas (I) and (II) respectively being:

wherein R 1 s are each a hydrogen atom or a C 1-10 organic group, at least one of R 1 s is a hydrogen atom or an alkenyl group, and R 1 s may be the same as or different from one another, and

wherein R 2 s are each a C 1-6 organic group and may be the same as or different from one another; R 3 s are each a hydrogen atom or an alkenyl group and may be the same as or different from one another; n represents an integer of 0 to 10; and m represents an integer of 1 to 10.

16. The positive photosensitive composition according to claim 1 ,
wherein the component (A) is a compound that decomposes in the presence of acid to become alkali-soluble.

17. A positive photosensitive composition according to claim 1 , comprising as the component (A) and the component (B),
(E) a compound obtained by a hydrosilylation reaction of the component (A) and the component (B).

18. The positive photosensitive composition according to claim 1 ,
wherein the component (D) is an iodonium salt or a sulfonium salt.

19. The positive photosensitive composition according to claim 1 , further comprising
(I) an alkali-soluble component.

20. The positive photosensitive composition according to claim 19 ,
wherein the component (I) is a SiH group- or alkenyl group-containing compound.

21. The positive photosensitive composition according to claim 19 ,
wherein the component (I) is a compound having a structure represented by the following formula (X1) or (X2):

22. The positive photosensitive composition according to claim 17 , further comprising
(J) a compound that contains an alkenyl group and has no structure that decomposes in the presence of acid to generate an acidic group or a hydroxyl group.

23. The positive photosensitive composition according to claim 1 , further comprising
(K) a sensitizer.

24. A thin film transistor, comprising as a gate insulator
a thin film obtained by curing the positive photosensitive composition according to claim 1 .

25. A thin film transistor, comprising as a passivation film
a thin film obtained by curing the positive photosensitive composition according to claim 1 .

26. The positive photosensitive composition according to claim 1 ,
wherein the component (B) is a compound having a structure represented by the following formula (X1) or (X2):

Assignees

• Kaneka Corp

Inventors

• Ide Masahito
• Inari Hirofumi
• Kitajima Aki
• Tahara Komei
• Manabe Takao

Classifications

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H10W74/47

  comprising organic materials, e.g. plastics or resins · CPC title