Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method

Patent metadata

Field	Value
Publication number	US-9494851-B2
Application number	US-201314348413-A
Country	US
Kind code	B2
Filing date	Mar 28, 2013
Priority date	Mar 28, 2012
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm 4 at a spatial frequency of not less than 1 μm −1 .

First claim

The invention claimed is:

1. A mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm 4 at a spatial frequency of not less than 1 μm −1 .

2. The mask blank substrate according to claim 1 , wherein the main surface has a power spectrum density of not more than 10 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 1 μm −1 and not more than 10 μm −1 .

3. The mask blank substrate according to claim 2 , wherein the main surface has a power spectrum density of not less than 1 nm 4 and not more than 10 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 1 μm −1 and not more than 10 μm −1 .

4. The mask blank substrate according to claim 1 , wherein the main surface is subjected to a surface treatment with catalyst-referred etching.

5. The mask blank substrate according to claim 1 , wherein the mask blank substrate is used in EUV lithography.

6. The mask blank substrate according to claim 5 , wherein a thin film of a material comprising a metal, an alloy, or at least one of oxygen, nitrogen and carbon contained in one of the metal and the alloy, is formed on the main surface of a substrate of multi-component glass.

7. A substrate with a multilayer reflective film comprising a multilayer reflective film having a high refractive index layer and a low refractive index layer alternately laminated on the surface of the mask blank substrate according to claim 1 .

8. The substrate with a multilayer reflective film according to claim 7 , wherein the substrate has a protective film on the multilayer reflective film.

9. The substrate with a multilayer reflective film according to claim 7 , wherein the surface of the multilayer reflective film or the protective film of the substrate with a multilayer reflective film has a power spectrum density of not more than 20 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 1 μm −1 .

10. The substrate with a multilayer reflective film according to claim 9 , wherein the surface of the multilayer reflective film has a power spectrum density of not more than 20 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 1 μm −1 and not more than 10 μm −1 .

11. The substrate with a multilayer reflective film according to claim 9 , wherein the surface of the multilayer reflective film has a power spectrum density of not more than 9 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 10 μm −1 and not more than 100 μm −1 .

12. The substrate with a multilayer reflective film according to claim 9 , wherein the surface of the multilayer reflective film has a root mean square roughness (Rms) of not more than 0.15 nm, obtained by measuring an area of 1 μm×1 μm with an atomic force microscope.

13. A substrate with a multilayer reflective film comprising a multilayer reflective film having a high refractive index layer and a low refractive index layer alternately laminated on a main surface of a mask blank substrate for use in lithography,
wherein a surface of the multilayer-reflective-film formed substrate has a root mean square roughness (Rms) of not more than 0.15 nm, obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 20 nm 4 at a spatial frequency of not less than 1 μm −1 .

14. The substrate with a multilayer reflective film according to claim 13 , wherein the substrate with a multilayer reflective film has a protective film on the multilayer reflective film.

15. The substrate with a multilayer reflective film according to claim 13 , wherein the surface of the multilayer reflective film has a power spectrum density of not more than 20 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 1 μm −1 and not more than 10 μm −1 .

16. The substrate with a multilayer reflective film according to claim 13 , wherein the surface of the multilayer reflective film has a power spectrum density of not more than 9 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 10 μm −1 and not more than 100 μm −1 .

17. A transmissive mask blank comprising a light shielding function film to be a transfer pattern on the main surface of the mask blank substrate according to claim 1 .

18. A reflective mask blank comprising an absorber film to be a transfer pattern on the multilayer reflective film of the substrate with a multilayer reflective film according to claim 7 .

19. A transmissive mask comprising a light shielding function film pattern provided on the main surface by patterning the light shielding function film of the transmissive mask blank according to claim 17 .

20. A reflective mask comprising:
an absorber pattern provided on the multilayer reflective film by patterning the absorber film of the reflective mask blank according to claim 18 .

21. A method of manufacturing a semiconductor device, comprising a step of forming a transfer pattern on a transferred substrate by performing a lithography process using an exposure device with the transmissive mask according to claim 19 .

22. A method of manufacturing a semiconductor device, comprising a step of forming a transfer pattern on a transferred substrate by performing a lithography process using an exposure device with the reflective mask according to claim 20 .

23. The substrate with a multilayer reflective film according to claim 8 , wherein the surface of the protective film has a power spectrum density of not more than 20 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 1 μm −1 .

24. The substrate with a multilayer reflective film according to claim 23 , wherein the surface of the protective film has a power spectrum density of not more than 20 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 1 μm −1 and not more than 10 μm −1 .

25. The substrate with a multilayer reflective film according to claim 23 , wherein the surface of the protective film has a power spectrum density of not more than 9 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of not less than 10 μm −1 and not more than 100 μm −1 .

26. The substrate with a multilayer reflective film according to claim 23 , wherein the surface of the protective film has a root mean square roughness (Rms) of not more than 0.15 nm, obtained by measuring an area of 1 μm×1 μm with an atomic force microscope.

27. The substrate with a multilayer reflective film according to claim 14 , wherein the surface of the protective film has a power spectrum density of not more than 20 nm 4 , obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, at a spatial frequency of n

Assignees

• Hoya Corp

Inventors

• Orihara Toshihiko
• Hamamoto Kazuhiro
• Kozakai Hirofumi
• Usui Youichi
• Shoki Tsutomu
• Horikawa Junichi

Classifications

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• C03C17/3636

  one layer at least containing silicon, hydrogenated silicon or a silicide · CPC title

• C03C2201/42

  containing titanium · CPC title

• C03C17/3649

  made of metals other than silver · CPC title