Nanoscale plasmonic field-effect modulator

Patent metadata

Field	Value
Publication number	US-9494715-B2
Application number	US-201414246026-A
Country	US
Kind code	B2
Filing date	Apr 4, 2014
Priority date	Apr 4, 2013
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

A plasmonic device having a transparent conducting oxide (TCO) waveguide and a tunable voltage applied across the TCO and a metal layer for modulating an input optical signal.

First claim

What is claimed is:

1. An optical modulator, comprising:
a substrate;
a metal layer on the substrate, the metal layer having a grooved channel;
a dielectric layer on the metal layer and in the grooved channel; and
a transparent conducting oxide (TCO) on the dielectric layer and in the grooved channel, the grooved channel being a plasmonic waveguide,
wherein the plasmonic waveguide is configured to form an accumulation layer in response to a voltage applied across the TCO and the metal layer such that the accumulation layer cuts off a fundamental mode of an optical signal in the plasmonic waveguide and such that the plasmonic waveguide exhibits an extinction ratio of at least about 3.0 dB/μm.

2. The modulator of claim 1 , wherein the grooved channel comprises a first end of the grooved channel at a first edge of the metal layer, and a second end of the grooved channel at a second edge of the metal layer.

3. The modulator of claim 2 , wherein the optical input signal is configured to be applied to the grooved channel at the first end, and a modulated optical signal is configured to be outputted at the second end.

4. The modulator of claim 2 , wherein the optical signal applied to the first end of the grooved channel is output from the second end of the grooved channel.

5. The modulator of claim 1 , wherein an entire portion of the grooved channel is covered with the TCO.

6. The modulator of claim 1 , wherein the grooved channel comprises a stub extending substantially perpendicularly to the grooved channel.

7. The modulator of claim 6 , wherein the stub is formed near a center section of a length of the grooved channel.

8. The modulator of claim 6 , wherein the stub forms a cavity resonator in the grooved channel.

9. The modulator of claim 6 , wherein the stub comprises two or more stubs, each of the stubs being spaced from one another.

10. The modulator of claim 1 , wherein the grooved channel comprises a section having a first width and a section having a second width, wherein the width of the groove varies gradually from the first width to the second width, and from the second width to the first width.

11. The modulator of claim 10 , wherein the first width is wider than the second width.

12. The modulator of claim 1 , wherein the grooved channel is V-shaped.

13. The modulator of claim 1 , wherein the TCO is selected from the group consisting of: indium tin oxide (ITO), gallium zinc oxide (Ga:ZnO), and aluminum zinc oxide (Al:ZnO).

14. The modulator of claim 1 , wherein the metal layer is a gold layer or a silver layer.

15. The modulator of claim 1 , wherein the grooved channel in the metal layer extends to the substrate.

16. A plasmonic waveguide modulator, comprising:
a first accumulation layer formed by a first metal-dielectric interface;
a second accumulation layer formed by a second metal-dielectric interface, the first accumulation layer and the second accumulation layer being arranged next to and spaced from each other, and such that a dielectric layer of the first interface and a dielectric layer of the second interface face each other;
transparent conducting oxide (TCO) between the first accumulation layer and the second accumulation layer; and
a tunable voltage applied across the TCO and a metal layer of the first interface and the second interface,
wherein a grooved channel formed by the first interface, the second interface, and the TCO is a plasmonic waveguide, and
wherein the first accumulation layer and the second accumulation layer cuts off a fundamental mode of an optical signal in the plasmonic waveguide and wherein the plasmonic waveguide exhibits an extinction ratio of at least about 3.0 dB/μm.

17. The modulator of claim 16 , wherein the TCO is configured to propagate an input optical signal by confining the input optical signal in the grooved channel.

18. The modulator of claim 16 , wherein the grooved channel comprises a first section having a first width and a second section having a second width.

19. The modulator of claim 18 ,
wherein the first width is formed by the first accumulation layer being spaced from the second accumulation layer by a first distance, and
wherein the second width is formed by the first accumulation layer being spaced from the second accumulation layer by a second distance.

20. The modulator of claim 19 , wherein a majority section of the grooved channel has a first width, and a minority section of the grooved channel near a center of the grooved channel has a second width.

21. The modulator of claim 20 , wherein the second section of the grooved channel is located at a substantially center section of a length of the grooved channel.

22. The modulator of claim 16 , wherein the first accumulation layer comprises a first stub extending in a direction away from the second accumulation layer.

23. The modulator of claim 22 , wherein the first stub forms a cavity resonator along a plasmonic optical propagation path formed by the first interface, the second interface and the TCO.

24. The modulator of claim 22 , wherein the first accumulation layer further comprises a second stub spaced from the first stub, and extending in a direction away from the second accumulation layer.

25. A method for modulating an optical signal, the method comprising:
receiving, with a plasmonic waveguide, an input optical signal, the plasmonic waveguide comprising:
a metal layer on a substrate, the metal layer having a grooved channel,
a dielectric layer on the metal layer and in the grooved channel, and
a transparent conducting oxide (TCO) on the dielectric layer and in the grooved channel;

applying a tunable voltage across the TCO and the metal layer; and
cutting off a fundamental mode of the optical signal in response to turning on the tunable voltage such that the plasmonic waveguide exhibits an extinction ratio of at least about 3.0 dB/μm.

26. The method of claim 25 , wherein the transmitting of the optical signal comprises propagating the optical signal in a plasmonic gap mode, such that the propagating optical signal is confined within the grooved channel.

27. The method of claim 25 , wherein the turning on and/or turning off the tunable voltages comprises iteratively turning on and/or turning off the tunable voltage at a set frequency.

28. The method of claim 25 , wherein the turning on the tunable voltage forms an accumulation layer at an interface of the metal layer and the dielectric layer.

Assignees

• California Inst Of Techn

Inventors

• Lee Ho Wai
• Burgos Stanley
• Papadakis Georgia
• Atwater Harry A

Classifications

• G02F2203/10

  plasmon · CPC title

• G02F2203/15

  involving resonance effects, e.g. resonantly enhanced interaction · CPC title

• G02F1/0356

  controlled by a high-frequency electromagnetic wave component in an electric waveguide structure · CPC title

• G02B5/008 Primary

  Surface plasmon devices (diffractive gratings with a pitch less than or comparable to the wavelength G02B5/1809; surface plasmons in integrated optics G02B6/1226; optical analysis of materials by means of surface plasmons G01N21/553) · CPC title

• G02F1/011

  in optical waveguides, not otherwise provided for in this subclass · CPC title