Scintillation detector
US-11867850-B2 · Jan 9, 2024 · US
US9494697B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9494697-B2 |
| Application number | US-201213805423-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2012 |
| Priority date | Feb 28, 2012 |
| Publication date | Nov 15, 2016 |
| Grant date | Nov 15, 2016 |
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Embodiments relate to detector imaging arrays with scintillators (e.g., scintillating phosphor screens) mounted to imaging arrays or radiographic detectors using the same. For example, the detector imaging arrays can include a scintillator, an imaging array comprising imaging pixels, where each imaging pixel comprises at least one readout element and one photosensor; and a first dielectric layer formed between the scintillator and the imaging layer, wherein the dielectric constant of the insulating layer is very low. Embodiments according to the application can include a second dielectric layer formed over at least a portion of the non-photosensitive regions of the array and/or a first dielectric layer, each with a dielectric constant.
Opening claim text (preview).
The invention claimed is: 1. A radiographic imaging apparatus, comprising: an insulating substrate; a radiographic imaging array over the insulating substrate, the radiographic imaging array comprising imaging pixels disposed in a two dimensional arrangement of rows and columns, each imaging pixel comprising at least one readout element, a data line, and one photosensor; an insulating layer over at least a portion of the imaging pixels; a scintillator over the imaging array, the scintillator to convert radiographic radiation to visible light; and an anti-static layer disposed between the insulating layer and the scintillator, wherein the anti-static layer is formed as a single continuous conductive layer over a plurality of adjacent ones of the imaging pixels, the anti-static layer is selectively patterned to cover the photosensors of each of the adjacent imaging pixels, the anti-static layer is selectively patterned to substantially not cover the readout element and the data line of each of the adjacent imaging pixels, and wherein the anti-static layer is electrically connected to an electrostatic discharge protection circuit. 2. The radiographic imaging apparatus of claim 1 , wherein a thickness of the patterned anti-static layer is less than 10 microns, a real part of the dielectric constant of the patterned anti-static layer is between 2.5 and 3.4, an optical index of the patterned anti-static layer is between 1.5 and 2.5, or wherein an optical transmission of the patterned anti-static layer is greater than 90% between the wavelengths of 450 nm and 650 nm. 3. The radiographic imaging apparatus of claim 1 , wherein the electrostatic discharge protection circuit comprises a conductive trace in the radiographic imaging array. 4. The radiographic imaging apparatus of claim 3 , wherein the patterned anti-static layer is electrically connected to the conductive trace using a via through the insulating layer. 5. The apparatus of claim 1 , wherein the anti-static layer over each photosensor is in electrical communication with the anti-static layer over the photosensor in each of two adjacent pixels in a same column. 6. The apparatus of claim 1 , wherein the anti-static layer over each photosensor is in electrical communication with the anti-static layer over the photosensor in each of four adjacent pixels. 7. The apparatus of claim 1 , wherein the anti-static layer is selectively patterned to include wide portions, the wide portions extend in a same dimension as an exposure area of the photosensors of each of the adjacent imaging pixels, the wide portions cover the photosensors of each of the adjacent imaging pixels and do not extend between the adjacent imaging pixels, the anti-static layer is selectively patterned to include narrow portions narrower than the wide portions, the narrow portions extending between the adjacent imaging pixels. 8. A method of manufacturing a radiographic imaging apparatus, the method comprising: forming an insulating substrate; forming a radiographic imaging array over the insulating substrate, the imaging array comprising imaging pixels disposed in a two dimensional arrangement of rows and columns, each imaging pixel comprising at least one readout element, a data line, and one photosensor, including forming the at least one photosensor as a polycrystalline photosensor or an amorphous photosensor; forming a scintillator over the imaging array to convert radiographic radiation to visible light; and forming an anti-static layer between the radiographic imaging array and the scintillator, including forming the anti-static layer as a single continuous conductive layer over a plurality of adjacent ones of the imaging pixels, patterning the anti-static layer to cover the photosensors of each of the adjacent imaging pixels pixel in the imaging array and to leave substantially not covered the readout element and the data line of each of the adjacent imaging pixels pixel, and electrically connecting the anti-static layer to a voltage terminal having a preselected voltage level. 9. The method of claim 8 , further comprising patterning the anti-static layer into wide portions covering an exposure area of the photosensors of each of the adjacent imaging pixels, patterning the anti-static layer into narrow portions narrower than the wide portions, the narrow portions extending between the adjacent imaging pixels and not covering the photosensors of each of the adjacent imaging pixels. 10. A radiographic imaging apparatus, comprising: an insulating substrate; a radiographic imaging array formed over the insulating substrate, the radiographic imaging array comprising imaging pixels disposed in a two dimensional arrangement of rows and columns, each imaging pixel comprising at least one readout element, a data line, and one photosensor; a scintillator over the imaging array to convert radiographic radiation into visible light; and an anti-static layer disposed between the radiographic imaging array and the scintillator, wherein the anti-static layer is formed as a single continuous conductive layer over a plurality of adjacent ones of the imaging pixels, the anti-static layer substantially covers an area of the photosensor of each of the adjacent imaging pixels, the anti-static layer does not cover the readout element and the data line of each of the adjacent imaging pixels, and wherein the anti-static layer is electrically connected to an electrostatic discharge circuit. 11. The radiographic imaging apparatus of claim 10 , wherein the continuous anti-static layer comprises an organic binder having nano-structured materials therein. 12. The radiographic imaging apparatus of claim 10 , where a resistivity of the continuous anti-static layer is between 1×10 4 ohms per square and 1×10 10 ohms per square. 13. The radiographic imaging apparatus of claim 10 , where a thickness of the continuous anti-static layer is less than 10 microns. 14. The radiographic imaging apparatus of claim 10 , where the continuous anti-static layer is electrically connected to one or more conductive traces in the radiographic imaging array. 15. The radiographic imaging apparatus of claim 14 , further comprising an insulating layer over at least a portion of the imaging pixels, and wherein the continuous anti-static layer is electrically connected to the one or more conductive traces using a via through the insulating layer. 16. The imaging apparatus of claim 10 , wherein the electrostatic discharge protection circuit comprises a circuit connected to ground. 17. The imaging apparatus of claim 10 , wherein the electrostatic discharge protection circuit comprises a circuit connected to a bias voltage source. 18. The apparatus of claim 10 , wherein the anti-static layer over each photosensor is in electrical communication with the anti-static layer over the photosensor in each of two adjacent pixels in a same column. 19. The apparatus of claim 10 , wherein the anti-static layer over each photosensor is in electrical communication with the anti-static layer over the photosensor in each of four adjacent pixels. 20. The apparatus of claim 10 , wherein the anti-static layer is selectively patterned to include wide portions, the wide portions extend in a same dimension as an exposure area of the photosensors of each of the adjacent imaging pixels, the wide portions cover the photosensors of each of the adjacent imaging pixels and do not extend between the adjacent imaging pixels, the anti-static layer is selectively patterned to include nar
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