Systems and Methods for Producing Carbon Solids
US-2024417566-A1 · Dec 19, 2024 · US
US9493348B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9493348-B2 |
| Application number | US-51356909-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 6, 2006 |
| Priority date | Nov 6, 2006 |
| Publication date | Nov 15, 2016 |
| Grant date | Nov 15, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A barrier stack for encapsulating a moisture and/or oxygen sensitive electronic device is provided. The barrier stack comprises a multilayer film having at least one barrier layer having low moisture and/or oxygen permeability, and at least one sealing layer arranged to be in contact with a surface of the barrier layer, wherein the sealing material comprises reactive nanoparticles capable of interacting with moisture and/or oxygen, thereby retarding the permeation of moisture and/or oxygen through defects present in the barrier layer.
Opening claim text (preview).
What is claimed is: 1. An encapsulation barrier stack for encapsulating at least one of a moisture and oxygen sensitive article, comprising: a multilayer film to be arranged on a substrate, the multilayer film having at least one barrier layer having at least one of low moisture and low oxygen permeability, and at least one sealing layer arranged to be in contact with a surface of the at least one barrier layer, for plugging at least one defect present in the barrier layer, wherein the at least one sealing layer comprises reactive nanoparticles interacting by way of chemical reaction with at least one of moisture and oxygen to retard the permeation of the at least one of moisture and oxygen through the at least one defect present in the barrier layer, wherein the nanoparticles present in the at least one sealing layer plug the at least one defect present in the at least one barrier layer, wherein the nanoparticles have different at least one of shapes and sizes for controlling the sealing and plugging of the at least one defect, wherein the barrier layer comprises a material selected from indium tin oxide (ITO), TiAlN, SiO 2 , SiC, Si 3 N 4 , TiO 2 , HfO 2 , Y 2 O 3 , Ta 2 O 5 , and Al 2 O 3 and wherein a permeation rate of the barrier stack having the at least one sealing layer on the surface of the at least one barrier layer is 10 −3 g/m 2 /day or less. 2. The barrier stack of claim 1 , wherein the nanoparticles comprise a material selected from the group consisting of metals and metal oxides. 3. The barrier stack of claim 2 , wherein the nanoparticles comprise a metal selected from the group consisting of Al, Ti, Mg, Ba and Ca. 4. The barrier stack of claim 2 , wherein the nanoparticles comprise a metal oxide selected from the group consisting of TiO 2 , Al 2 O 3 , ZrO 2 , ZnO, BaO, SrO, CaO and MgO, VO 2 , CrO 2 , MoO 2 , and LiMn 2 O 4 or a transparent conductive oxide selected from the group consisting of cadmium stannate (Cd 2 SnO 4 ), cadmium indate (CdIn 2 O 4 ), zinc stannate (Zn 2 SnO 4 and ZnSnO 3 ), and zinc indium oxide (Zn 2 In 2 O 5 ). 5. The barrier stack of claim 1 , wherein the nanoparticles further comprise carbon nanotubes. 6. The barrier stack of claim 5 , wherein the amount of carbon nanotubes present is about 0.01% to about 10% of the total weight of nanoparticles present in the sealing layer. 7. The barrier stack of claim 1 , wherein the sealing layer comprises carbon nanotubes and metal oxide nanoparticles, the quantity of metal oxide nanoparticles present being between 500 to 15000 times (by weight) the quantity of carbon nanotubes present. 8. The barrier stack of claim 1 , further comprising inert nanoparticles obstructing the permeation of the at least one of moisture and oxygen through the at least one defect present in the barrier layer. 9. The barrier stack of claim 8 , wherein the inert nanoparticles comprise a material selected from the group consisting of gold, copper, silver, platinum, silica, wollastonite, mullite, monmorillonite, silicate glass, fluorosilicate glass, fluoroborosilicate glass, aluminosilicate glass, calcium silicate glass, calcium aluminum silicate glass, calcium aluminum fluorosilicate glass, titanium carbide, zirconium carbide, zirconium nitride, silicon carbide, or silicon nitride, metal sulfides, and a mixture or combination thereof. 10. The barrier stack of claim 1 , wherein the size of the nanoparticles is smaller than the average diameter of defects present in the at least one barrier layer. 11. The barrier stack of claim 1 , wherein when the at least one of the oxygen and moisture sensitive article comprises an electroluminescent electronic component, the average size of the nanoparticles is less than one-half the characteristic wavelength of light produced by the electroluminescent electronic component. 12. The barrier stack of claim 1 , wherein the sealing layer further comprises a polymeric binder. 13. The barrier stack of claim 1 , further comprising a substrate for supporting the multilayer film. 14. The barrier stack of claim 13 , wherein the multilayer film is orientated such that the sealing layer is arranged on the substrate. 15. The barrier stack of claim 13 , wherein the substrate comprises a material selected from polyacetate, polypropylene, polyimide, cellophane, poly(l-trimethylsilyl-1-propyne, poly(4-methyl-2-pentyne), polyimide, polycarbonate, polyethylene, polyethersulfone, epoxy resins, polyethylene terepthalate, polystyrene, polyurethane, polyacrylate, and polydimethylphenylene oxide, styrene-divinylbenzene copolymers, polyvinylidene fluoride (PVDF), nylon, nitrocellulose, cellulose, glass, indium tin oxide, nano-clays, silicones, polydimethylsiloxanes, biscyclopentadienyl iron, and polyphosphazenes. 16. The barrier stack of claim 13 , further comprising a planarising layer interposed between the substrate and the multilayer film. 17. The barrier stack of claim 1 , wherein the multilayer film is arranged on one surface of the substrate or wherein each multilayer film is arranged on each opposing surface of the substrate. 18. The barrier stack of claim 1 , further comprising a terminal layer for protecting the multilayer film. 19. The barrier stack of claim 18 , wherein the terminal layer comprises an acrylic film. 20. The barrier stack of claim 19 , wherein the acrylic film comprises distributed therein at least one of LiF and MgF 2 particles. 21. The encapsulation barrier stack of claim 1 , wherein the chemical reaction is at least one of hydrolysis or oxidation. 22. An electronic device comprising: an active component that is sensitive to at least one of moisture and oxygen, the active component being arranged within an encapsulation barrier stack for encapsulating at least one of a moisture and oxygen sensitive article, the encapsulation barrier stack comprising: a multilayer film to be arranged on a substrate, the multilayer film having at least one barrier layer having at least one of low moisture and low oxygen permeability, and at least one sealing layer arranged to be in contact with a surface of the at least one barrier layer, for plugging at least one defect present in the barrier layer, wherein the at least one sealing layer comprises reactive nanoparticles interacting by way of a chemical reaction with at least one of moisture and oxygen to retard the permeation of the at least one of moisture and oxygen through the at least one defect present in the barrier layer, wherein the nanoparticles present in the at least one sealing layer plug the at least one defect present in the at least one barrier layer, wherein the nanoparticles have different at least one of shapes and sizes for controlling the sealing and plugging of the at least one defect, wherein the barrier layer comprises a material selected from indium tin oxide (ITO), TiAlN, SiO 2 , SiC, Si 3 N 4 , TiO 2 , HfO 2 , Y 2 O 3 , Ta 2 O 5 , and Al 2 O 3 and wherein a permeation rate of the barrier stack having the at least one sealing layer on the surface of the at least one barrier layer is 10 −3 g/m 2 /day or less. 23. The electronic device of claim 22 , wherein the encapsulation barrier stack forms a base substrate for supporting the reactive component. 24. The electronic device of claim 22 , wherein the encapsulation barrier stack further comprises a covering layer arranged proximally over the active component to form a proximal encapsulation, the reactive component being sandwiched between th
Electricity · mapped topic
Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors · CPC title
Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title
Electricity · mapped topic
Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.