Wafer debonding using long-wavelength infrared radiation ablation
US-9269561-B2 · Feb 23, 2016 · US
US9492986B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9492986-B2 |
| Application number | US-201113881114-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 7, 2011 |
| Priority date | Oct 29, 2010 |
| Publication date | Nov 15, 2016 |
| Grant date | Nov 15, 2016 |
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A laminate including a supporting member which is light transmissive; a supported substrate supported by the supporting member; an adhesive layer provided on a surface of the supported substrate which surface faces toward the supporting member; and a release layer which is made of an inorganic material and is provided between the supporting member and the supported substrate, the release layer having a property that changes when the release layer absorbs light coming through the supporting layer, and the release layer having a flat surface which faces the adhesive layer.
Opening claim text (preview).
What is claimed is: 1. A method for separating a supporting member and a silicon wafer from each other which are included in a laminate, the laminate including: the supporting member which is light transmissive; the silicon wafer supported by the supporting member; an adhesive layer provided on a surface of the silicon wafer, wherein said surface faces toward the supporting member; and a release layer which is made of an inorganic material and is provided between the supporting member and the silicon wafer, wherein the release layer has a property that changes so that the release layer has a reduced material strength when it absorbs light coming through the supporting member, wherein the supporting member, the release layer, the adhesive layer, and the silicon wafer are stacked together in this order in the laminate, said method comprising changing the property of the release layer so that the release layer has a reduced material strength by irradiating the release layer with light through the supporting member; and breaking the release layer. 2. The method as set forth in claim 1 , wherein the inorganic material is at least one selected from the group consisting of a metal, a metal compound, and carbon. 3. The method as set forth in claim 1 , wherein the inorganic material is at least one selected from the group consisting of gold, platinum, palladium, cobalt, rhodium, iridium, calcium, ruthenium, osmium, manganese, molybdenum, tungsten, niobium, tantalum, bismuth, antimony, lead, silver, copper, iron, nickel, aluminum, titanium, chrome, tin, alloys of these metals, SiO 2 , SiN, Si 3 N 4 , TiN, and carbon. 4. The method as set forth in claim 1 , further comprising at least one layer provided between the supporting member and the release layer. 5. The method as set forth in claim 1 , wherein the adhesive layer is made of a hydrocarbon adhesive. 6. A laminate comprising: a supporting member which is light transmissive; a silicon wafer supported by the supporting member; an adhesive layer provided on a surface of the silicon wafer, wherein said surface faces toward the supporting member; and a release layer which is made of an inorganic material and is provided between the supporting member and the silicon wafer, the release layer having a property that changes so that the release layer has a reduced material strength when it absorbs light coming through the supporting member, the release layer having a flat surface which faces the adhesive layer, and wherein the supporting member, the release layer, the adhesive layer, and the silicon wafer are stacked together in this order, wherein: the inorganic material is a metal or a metal compound; and the laminate comprises, on at least one surface of the release layer, an anti-reflection film or an antistatic film. 7. The laminate as set forth in claim 6 , wherein the adhesive layer is made of a hydrocarbon adhesive.
used to protect an active side of a device or wafer · CPC title
used during dicing or grinding · CPC title
using temporarily an auxiliary support · CPC title
the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title
of metal · CPC title
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