Semiconductor device, method of manufacturing semiconductor device, solid-state image pickup unit, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-9490441-B2
Application number	US-201314417392-A
Country	US
Kind code	B2
Filing date	Jul 25, 2013
Priority date	Aug 2, 2012
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

There are provided a semiconductor device capable of adjusting a work function without reducing light transmittance of an electrode, a method of manufacturing this semiconductor device, a solid-state image pickup unit including this semiconductor device, and an electronic apparatus including this solid-state image pickup action. The semiconductor device includes a functional layer between a first electrode and a second electrode, the functional layer including an organic film, in which the first electrode and the second electrode are made of a same transparent conductive material, and an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode.

First claim

What is claimed is:

1. A semiconductor device comprising:
a functional layer between a first electrode and a second electrode, the functional layer including an organic film,
wherein the first electrode and the second electrode are made of a same transparent conductive material, and
an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode.

2. The semiconductor device according to claim 1 , wherein
the first electrode includes a reduced layer in a part or a whole in a thickness direction from the interface on the functional layer side, and
an oxygen amount of the reduced layer is smaller than the oxygen amount at the interface on the functional layer side of the second electrode.

3. The semiconductor device according to claim 2 , wherein an inorganic oxide layer is included between the reduced layer and the functional layer.

4. The semiconductor device according to claim 3 , wherein
the functional layer is a photoelectric conversion layer, and
the inorganic oxide layer is a hole block layer.

5. The semiconductor device according to claim 2 , wherein a first inorganic oxide layer and a second inorganic oxide layer are included between the reduced layer and the functional layer.

6. The semiconductor device according to claim 5 , wherein
the functional layer is a photoelectric conversion layer,
the first inorganic oxide layer is a work function adjustment layer, and
the second inorganic oxide layer is a hole block layer.

7. The semiconductor device according to claim 3 , wherein the inorganic oxide layer is made of one or more kinds of a group consisting of tantalum oxide, molybdenum oxide, vanadium oxide, tungsten oxide, hafnium oxide, and cesium oxide.

8. The semiconductor device according to claim 1 , wherein the oxygen amount at the interface on the functional layer side of the second electrode is larger than the oxygen amount at the interface on the functional layer side of the first electrode.

9. The semiconductor device according to claim 1 , wherein the transparent conductive material is configured of one or more kinds of a group consisting of ITO (indium tin oxide), a tin oxide (SnO 2 )-based material doped with a dopant, aluminum zinc oxide, gallium zinc oxide, indium zinc oxide, CuI, InSbO 4 , ZnMgO, CuInO 2 , MgIn 2 O 4 , CdO, and ZnSnO 3 .

10. A method of manufacturing a semiconductor device comprising:
forming a first electrode made of a transparent conductive material;
forming an inorganic oxide layer with a higher metal content ratio than that in an ideal composition on the first electrode;
forming a reduced layer in a part or a whole in a thickness direction from an interface on a functional layer side of the first electrode by annealing treatment and allowing an oxygen amount of the reduced layer to be smaller than an oxygen amount of the transparent conductive material;
forming the functional layer including an organic film on the inorganic oxide layer; and
forming a second electrode made of the same transparent conductive material as that of the first electrode on the functional layer.

11. The method of manufacturing the semiconductor device according to claim 10 , wherein the inorganic oxide is configured of one or more kinds of a group consisting of molybdenum oxide, vanadium oxide, tungsten oxide, hafnium oxide, and cesium oxide.

12. The method of manufacturing the semiconductor device according to claim 10 , wherein the transparent conductive material is configured of one or more kinds of a group consisting of ITO (indium tin oxide), a tin oxide (SnO 2 )-based material doped with a dopant, aluminum zinc oxide, gallium zinc oxide, indium zinc oxide, CuI, InSbO 4 , ZnMgO, CuInO 2 , MgIn 2 O 4 , CdO, and ZnSnO 3 .

13. A method of manufacturing a semiconductor device comprising:
forming a first electrode made of a transparent conductive material;
forming a first layer and a second layer on the first electrode in this order from the first electrode side, the first layer made of an inorganic oxide with a higher metal content ratio than that in an ideal composition or a metal, and the second layer made of an inorganic oxide with a larger oxygen amount than that of the first layer;
forming a reduced layer in a part or a whole in a thickness direction from an interface on a functional layer side of the first electrode by annealing treatment and allowing an oxygen amount of the reduced layer to be smaller than an oxygen amount of the transparent conductive material;
forming the functional layer including an organic film on the second layer; and
forming a second electrode made of the same transparent conductive material as that of the first electrode on the functional layer.

14. A method of manufacturing a semiconductor device comprising:
forming a first electrode made of a transparent conductive material;
forming a functional layer including an organic film on the first electrode;
forming a second electrode made of the same transparent conductive material as that of the first electrode on the functional layer; and
allowing, by annealing treatment, an oxygen amount at an interface on the functional layer side of the second electrode to be larger than an oxygen amount at an interface on the functional layer side of the first electrode.

15. The method of manufacturing the semiconductor device according to claim 14 , comprising
forming a hard mask made of a transparent material on the second electrode,
wherein the annealing treatment is performed in a film formation chamber in which the hard mask is formed.

16. A solid-state image pickup unit provided with pixels each of which includes one or a plurality of organic photoelectric conversion sections, the organic photoelectric conversion sections each comprising:
a functional layer between a first electrode and a second electrode, the functional layer including an organic film,
wherein the first electrode and the second electrode are made of a same transparent conductive material, and
an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode.

17. The solid-state image pickup unit according to claim 16 , wherein in each pixel, the one or the plurality of organic photoelectric conversion sections and one or a plurality of inorganic photoelectric conversion sections are laminated, the inorganic photoelectric conversion sections configured to perform photoelectric conversion on a wavelength range different from that in the organic photoelectric conversion sections.

18. The solid-state image pickup unit according to claim 17 , wherein
the inorganic photoelectric conversion section is formed to be embedded in a semiconductor substrate, and
the organic photoelectric conversion section is formed on a first surface side of the semiconductor substrate.

19. The solid-state image pickup unit according to claim 18 , wherein a multilayer wiring layer is formed on a second surface side of the semiconductor substrate.

20. An electronic apparatus provided with a solid-state image pickup unit, the solid-state image pickup unit including pixels each of which includes one or a plurality of organic photoelectric conversion sections, the organic photoelectric conversion sections each comprising:
a functional layer between a first electrode and a second electrode, the functional layer includ

Assignees

• Sony Corp

Inventors

• Takimoto Kaori

Classifications

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• Y02E10/549

  Organic PV cells · CPC title

• H01L2251/306

  Electricity · mapped topic

• H01L27/307

  Electricity · mapped topic

• H01L27/14685

  Electricity · mapped topic