Optoelectronic component and use of a copper complex in a charge generation layer sequence

Patent metadata

Field	Value
Publication number	US-9490438-B2
Application number	US-201113993649-A
Country	US
Kind code	B2
Filing date	Nov 23, 2011
Priority date	Dec 13, 2010
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

Different embodiments of the optoelectronic component have an organic layer structure for isolating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type. The organic layer structure comprises a copper complex which has at least one ligand with the chemical structure as per a formula (I). In this formula, E1 and E2 are each one of the following elements independently of one another: oxygen, sulphur or selenium. R is chosen from the group comprising: hydrogen or substituted or unsubstituted, branched, linear or cyclic hydrocarbons.

First claim

The invention claimed is:

1. An optoelectronic component having an organic layer structure for separating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type,
the organic layer structure comprising a copper complex which has at least one ligand with the chemical structure according to formula I:

wherein E 1 comprises an element selected from the group consisting of oxygen, sulfur and selenium, wherein E 2 comprises an element selected from the group consisting of oxygen, sulfur and selenium, wherein R is selected from the group consisting of hydrogen or substituted or unsubstituted, branched, linear, or cyclic hydrocarbons, wherein the organic layer structure comprises an organic semiconductor layer p-doped with the copper complex and an n-doped organic semiconductor layer, and wherein an interlayer is disposed between the p-doped organic semiconductor layer and the n-doped organic semiconductor layer.

2. The optoelectronic component according to claim 1 , wherein the copper complex is a copper(I) pentafluorobenzoate.

3. The optoelectronic component according to claim 1 , wherein the copper complex is incorporated as dopant in a matrix material.

4. The optoelectronic component according to claim 3 , wherein the matrix material comprises 1-TNATA (4,4′,4″-tris(N-(1-naphthyl)-N-phenylamino)triphenylamine.

5. The optoelectronic component according to claim 1 , wherein the organic layer structure comprises a charge generation layer sequence.

6. The optoelectronic component according to claim 1 , where the p-doped organic semiconductor layer has a doping gradient toward the n-doped organic semiconductor layer.

7. The optoelectronic component according to claim 6 , where the doping of the p-doped organic semiconductor layer increases toward the n-doped organic semiconductor layer.

8. The optoelectronic component according to claim 7 , where the organic layer structure is applied on an electrode.

9. The optoelectronic component according to claim 8 , wherein the electrode comprises an anode contact.

10. The optoelectronic component according to claim 1 , wherein the optoelectronic component has a layer stack comprising the organic layer structure.

11. The optoelectronic component according to claim 10 , where the layer stack comprises an active layer.

12. The optoelectronic component according to claim 11 , where the active layer comprises an electroluminescent material.

13. The optoelectronic component according to claim 11 , where the organic layer structure is disposed between the active layer and a second active layer.

14. The optoelectronic component according to claim 1 , wherein E 1 and E 2 comprise the same element.

15. The optoelectronic component according to claim 1 , wherein E 1 and E 2 comprise different elements.

16. An optoelectronic component having an organic layer structure for separating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type,
the organic layer structure comprising a copper complex which has at least one ligand with the chemical structure according to formula I:

wherein E 1 comprises an element selected from the group consisting of oxygen, sulfur and selenium and E 2 comprises an element selected from the group consisting of oxygen, sulfur and selenium and wherein R is selected from the group consisting of hydrogen or substituted or unsubstituted, branched, linear, or cyclic hydrocarbons, wherein the organic layer structure comprises an organic semiconductor layer p-doped with the copper complex and an n-doped organic semiconductor layer, and wherein the p-doped organic semiconductor layer has a doping gradient toward the n-doped organic semiconductor layer.

17. The optoelectronic component according to claim 16 , where the doping of the p-doped organic semiconductor layer increases toward the n-doped organic semiconductor layer.

18. The optoelectronic component according to claim 17 , where the organic layer structure is applied on an electrode.

19. The optoelectronic component according to claim 18 , wherein the electrode comprises an anode contact.

20. An optoelectronic component having an organic layer structure for separating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type,
the organic layer structure comprising a copper complex which has at least one ligand with the chemical structure according to formula I:

wherein E 1 comprises an element selected from the group consisting of oxygen, sulfur and selenium and E 2 comprises an element selected from the group consisting of oxygen, sulfur and selenium and wherein R is selected from the group consisting of hydrogen or substituted or unsubstituted, branched, linear, or cyclic hydrocarbons, wherein the optoelectronic component has a layer stack comprising the organic layer structure, and wherein the layer stack comprises an active layer.

Assignees

• Heuser Karsten
• Jaeger Arndt
• Niedermeier Ulrich
• Diez Carola
• Osram Oled Gmbh

Inventors

• Heuser Karsten
• Jaeger Arndt
• Niedermeier Ulrich
• Diez Carola

Classifications

• H01L51/5036

  Electricity · mapped topic

• H01L51/0059

  Electricity · mapped topic

• H01L51/0091 Primary

  Electricity · mapped topic

• H10K85/371 Primary

  Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver · CPC title

• H10K50/13

  comprising stacked EL layers within one EL unit · CPC title