Color converting element and light emitting device including the same

US9490403B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9490403-B2
Application numberUS-201514666178-A
CountryUS
Kind codeB2
Filing dateMar 23, 2015
Priority dateSep 21, 2012
Publication dateNov 8, 2016
Grant dateNov 8, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Disclosed are a color converting element and a method for manufacturing the color converting element. The disclosed color converting element includes: first wavelength conversion cells spaced apart from one another; and second wavelength conversion cells arranged among the first wavelength conversion cells. The first and second wavelength conversion cells are made of a material containing glass. The color converting element of the disclosed technology is configured in that color converting cells having different color converting characteristics are periodically arranged, when the color converting element is applied to a color converting glass material which may improve thermal and chemical durability of white LEDs, thus minimizing the degradation of efficiency or luminance caused by an interaction between color converting phosphors or active ions and allowing for ease of adjustment of color rendering index.

First claim

Opening claim text (preview).

What is claimed is: 1. A light emitting device comprising: a substrate; a light emitting diode disposed over the substrate and including a light emitting structure, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a color converting element disposed over the light emitting diode, wherein the light emitting structure includes an elongated shape extending in a first direction and includes a mesa including the second conductive type semiconductor layer and the active layer, wherein the color converting element includes: a plurality of first wavelength conversion cells separated from one another; and a plurality of second wavelength conversion cells each disposed between the first wavelength conversion cells, and wherein at least one of interfaces between the first wavelength conversion cells and the second wavelength conversion cells has an elongated shape extending in a second direction, and the first direction is not parallel to the second direction. 2. The light emitting device of claim 1 , wherein the first and second wavelength conversion cells are arranged in a stripe pattern. 3. The light emitting device of claim 2 , wherein the first direction is substantially perpendicular to the second direction. 4. The light emitting device of claim 1 , wherein the first and second wavelength conversion cells are arranged in a lattice pattern. 5. The light emitting device of claim 1 , wherein the color converting element has a greater horizontal cross-sectional area than an upper surface of the light emitting diode. 6. The light emitting device of claim 5 , wherein the upper surface of the light emitting diode is covered by the color converting element. 7. The light emitting device of claim 1 , wherein the first and second wavelength conversion cells includes a glass containing material. 8. The light emitting device of claim 7 , wherein the glass containing material includes a ceramic phosphor-containing glass or crystallized glass material. 9. The light emitting device of claim 7 , wherein the glass containing material includes an active ion for color conversion, quantum dot or nanocrystal-containing glass or crystallized glass material. 10. The light emitting device of claim 1 , wherein the color converting element further includes a plurality of third wavelength conversion cells separated from one another, and each of the third wavelength conversion cells is disposed between the first wavelength conversion cells and the second wavelength conversion cells. 11. The light emitting device of claim 1 , wherein the light emitting diode includes: a first contact electrode and a second contact electrode disposed over the light emitting structure and forming ohmic contact with the first and second conductive type semiconductor layers, respectively; an insulation layer insulating the first contact electrode and the second contact electrode while partially covering the first and second contact electrodes; and first and second pad electrodes disposed over the insulation layer and electrically connected to the first and second contact electrodes, respectively. 12. The light emitting device of claim 11 , wherein the second contact electrode is disposed over the mesa. 13. The light emitting device of claim 12 , wherein the first contact electrode forms ohmic contact with the first conductive type semiconductor layer around the mesa, and an ohmic contact area between the first contact electrode and the first conductive type semiconductor layer has an elongated shape extending in the first direction. 14. The light emitting device of claim 1 , wherein the first and second wavelength conversion cells have the same or different widths less than or equal to 300 μm. 15. The light emitting device of claim 1 , further including: a distributed Bragg reflector disposed between the color converting element and the light emitting diode. 16. The light emitting device of claim 15 , wherein the distributed Bragg reflector transmits light emitted from the light emitting diode and reflects light emitted from the color converting element and is subjected to wavelength conversion in the color converting element. 17. The light emitting device of claim 15 , wherein the distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector disposed over the first distributed Bragg reflector, and the first distributed Bragg reflector reflects light having a shorter wavelength than the second distributed Bragg reflector.

Assignees

Inventors

Classifications

  • of wavelength conversion means · CPC title

  • characterised by their shape, e.g. plate or foil · CPC title

  • having two or more wavelength conversion materials · CPC title

  • Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

  • of the light-emitting regions, e.g. non-planar junctions · CPC title

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Frequently asked questions

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What does patent US9490403B2 cover?
Disclosed are a color converting element and a method for manufacturing the color converting element. The disclosed color converting element includes: first wavelength conversion cells spaced apart from one another; and second wavelength conversion cells arranged among the first wavelength conversion cells. The first and second wavelength conversion cells are made of a material containing glass…
Who is the assignee on this patent?
Postech Academy—Industry Found, Seoul Viosys Co Ltd, Posco Led Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10H20/8516. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 08 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).