Method for producing an optoelectronic semiconductor device, and optoelectronic semiconductor device

Patent metadata

Field	Value
Publication number	US-9490397-B2
Application number	US-201314654500-A
Country	US
Kind code	B2
Filing date	Dec 17, 2013
Priority date	Dec 21, 2012
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

A method for producing an optoelectronic thin-film chip semiconductor device is specified. A conductor structure is applied on a carrier and a multiplicity of optoelectronic semiconductor chips are arranged between the conductor structures. Each of the optoelectronic semiconductor chips includes a layer at a top side. Furthermore, electrical connections between semiconductor chip and the conductor structure are established, for instance using a bonding wire. The semiconductor chips and the conductor structure are surrounded with a molded body. The molded body does not project beyond the optoelectronic semiconductor chips at the top side thereof facing away from the carrier. Moreover, the carrier is removed and the semiconductor chips surrounded by molding are singulated.

First claim

The invention claimed is:

1. An optoelectronic semiconductor component comprising:
an optoelectronic semiconductor chip that comprises a layer on an upper side;
a conductor structure that comprises an electrically conductive material and has an opening in which the optoelectronic semiconductor chip is arranged;
a contact wire that electrically connects a terminal point of the optoelectronic semiconductor chip to the conductor structure;
a molded body, wherein lateral surfaces of the optoelectronic semiconductor chip and the contact wire are at least partially covered by the molded body and wherein the optoelectronic semiconductor chip extends beyond the molded body; and
a reflective envelope molded around the optoelectronic semiconductor chip in a region extending beyond the molded body, wherein the reflective envelope does not extend beyond the optoelectronic semiconductor chip on its upper side,
wherein a lower side of the optoelectronic semiconductor chip is freely accessible.

2. The optoelectronic semiconductor component according to claim 1 , wherein a lower side of the optoelectronic semiconductor chip is exposed.

3. The optoelectronic semiconductor component according to claim 1 , wherein the contact wire is arranged partially in the molded body and partially in the reflective envelope.

4. The optoelectronic semiconductor component according to claim 1 , wherein the terminal point is arranged on the upper side of the optoelectronic semiconductor chip.

5. The optoelectronic semiconductor component according to claim 1 , wherein the reflective envelope comprises a silicone or a mixture of a silicone and an epoxy.

6. The optoelectronic semiconductor component according to claim 1 , wherein the reflective envelope comprises radiation-reflective particles selected from the group consisting of TiO 2 , BaSO 4 , ZnO, Al x O y , and ZrO 2 and combinations thereof.

7. The optoelectronic semiconductor component according to claim 1 , wherein lateral surfaces of the optoelectronic semiconductor component have traces of a material removal.

8. The optoelectronic semiconductor component according to claim 7 , wherein the lateral surface of the optoelectronic semiconductor component has sawing grooves or grinding marks.

9. An optoelectronic semiconductor component comprising:
an optoelectronic semiconductor chip comprising a layer on an upper side;
a conductor structure comprising an electrically conductive material and having opening in which the optoelectronic semiconductor chip is arranged,
a contact wire electrically connecting a terminal point of the optoelectronic semiconductor chip to the conductor structure;
a molded body, wherein lateral surfaces of the optoelectronic semiconductor chip and the contact wire are at least partially covered by the molded body, and wherein the optoelectronic semiconductor chip extends beyond the molded body; and
a reflective envelope molded around the optoelectronic semiconductor chip in a region extending beyond the molded body, wherein the contact wire is arranged partially in the molded body and partially in the reflective envelope, and wherein the reflective envelope does not extend beyond the optoelectronic semiconductor chip on its upper side.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Preuβ Stephan
• Zitzlsperger Michael
• Kistner Caroline

Classifications

• H10W72/536

  the connected ends being ball-shaped · CPC title

• H10W72/0198 Primary

  batch processes · CPC title

• H10H20/8514

  characterised by their shape, e.g. plate or foil · CPC title

• H10H20/882

  Scattering means (H10H20/82 takes precedence) · CPC title

• H10H20/0364

  of interconnections · CPC title