Magnetic memory devices having a perpendicular magnetic tunnel junction

Patent metadata

Field	Value
Publication number	US-9490298-B2
Application number	US-201414264049-A
Country	US
Kind code	B2
Filing date	Apr 28, 2014
Priority date	Aug 2, 2013
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.

First claim

What is claimed is:

1. A magnetic memory device, comprising:
a tunnel barrier on a substrate;
a free magnetic structure; and
a reference magnetic structure spaced apart from the free magnetic structure and arranged on an opposite side of the tunnel barrier,
wherein the free magnetic structure comprises:
a first free layer and a second free layer spaced apart from each other on opposite sides of an exchange-coupling layer, the first and second free layers having an interface perpendicular magnetic anisotropy, the second free layer including at least one portion having an amorphous structure; and
a perpendicular magnetization enhancement layer being in contact with the second free layer and being spaced apart from the exchange-coupling layer on an opposite side of the second free layer, the perpendicular magnetization enhancement layer including a metal oxide layer and the metal oxide layer including at least one portion having an amorphous structure,

wherein the second free layer is thinner than the first free layer, and
wherein the perpendicular magnetization enhancement layer is thinner than the tunnel junction.

2. A magnetic memory device, comprising:
a tunnel barrier on a substrate; and
a free magnetic structure and a reference magnetic structure separated from each other by the tunnel barrier,
wherein the free magnetic structure comprises:
a first free layer and a second free layer separated from each other by an exchange-coupling layer, the second free layer including at least one portion having an amorphous structure; and
a perpendicular magnetization enhancement layer being in contact with the second free layer and being separated from the exchange-coupling layer by the second free layer, the perpendicular magnetization enhancement layer including a metal oxide layer and the metal oxide layer including at least one portion having an amorphous structure,

wherein a thickness of the perpendicular magnetization enhancement layer is less than a thickness of the tunnel barrier.

3. A magnetic memory device, comprising:
a free magnetic structure, and
a reference magnetic structure spaced apart from the free magnetic structure and having a tunnel barrier arranged therebetween,
wherein the free magnetic structure comprises:
an exchange-coupling layer,
a first free layer between the tunnel barrier and the exchange-coupling layer,
a second free layer spaced apart from the first free layer with the exchange-coupling layer interposed therebetween, the second free layer including at least one portion having an amorphous structure, and
a perpendicular magnetization enhancement layer spaced apart from the exchange-coupling layer with the second free layer interposed therebetween, the perpendicular magnetization enhancement layer including a metal oxide layer and the metal oxide layer including at least one portion having an amorphous structure,

wherein a thickness of the first free layer is greater than a first maximum anisotropy thickness at which the first free layer has a maximum perpendicular anisotropy,
wherein a thickness of the second free layer is less than a second maximum anisotropy thickness at which the second free layer has a maximum perpendicular anisotropy, and
wherein a thickness of the perpendicular magnetization enhancement layer is less than a thickness of the tunnel barrier.

4. The magnetic memory device of claim 3 , wherein the first free layer comprises the same material as the second free layer, and
wherein the thickness of the first free layer is at least about 1.5 times of that of the second free layer.

5. The magnetic memory device of claim 3 , wherein the perpendicular magnetization enhancement layer is in contact with the second free layer.

6. The magnetic memory device of claim 3 , wherein an RA value of the perpendicular magnetization enhancement layer is less than that of the tunnel barrier.

7. The magnetic memory device of claim 3 , further comprising a substrate,
wherein the free magnetic structure is provided between the substrate and the tunnel barrier.

8. The magnetic memory device of claim 3 , further comprising a substrate,
wherein the free magnetic structure is provided spaced apart from the substrate on an opposite side of the tunnel barrier.

9. The magnetic memory device of claim 3 , wherein the perpendicular magnetization enhancement layer includes a plurality of portions having a low angle grain boundary.

10. The magnetic memory device of claim 3 , wherein each of the first and second free layers comprises a material exhibiting an intrinsic in-plane magnetization property.

11. The magnetic memory device of claim 10 , wherein the first and second free layers each comprise boron and at least one of cobalt, iron, or nickel.

12. The magnetic memory device of claim 3 , wherein the exchange-coupling layer comprises metal.

13. The magnetic memory device of claim 12 , wherein the exchange-coupling layer comprises at least one of Ta, W, Nb, Ru, Ti, Cr, V, Mo, or Re.

14. The magnetic memory device of claim 3 , wherein the first and second free layers are configured to have an interface perpendicular anisotropy.

15. The magnetic memory device of claim 14 , wherein the thickness of the first free layer is smaller than a maximum thickness at which the first free layer no longer has perpendicular magnetization, thereby allowing the first free layer to have perpendicular magnetization.

16. The magnetic memory device of claim 14 , wherein the thickness of the second free layer is greater than a minimum thickness below which the second free layer does not have perpendicular magnetization, thereby allowing the second free layer to have perpendicular magnetization.

Assignees

• Kim Woojin
• Kim Ki Woong
• Lim Woo Chang
• Samsung Electronics Co Ltd

Inventors

• Kim Woojin
• Kim Ki Woong
• Lim Woo Chang

Classifications

• H01F10/3204

  Exchange coupling of amorphous multilayers · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L27/224 Primary

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title