Quaternary ammonium salt compound, composition for forming a resist under layer film, and patterning process

Patent metadata

Field	Value
Publication number	US-9490144-B2
Application number	US-201514680581-A
Country	US
Kind code	B2
Filing date	Apr 7, 2015
Priority date	Jun 4, 2014
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

A quaternary ammonium salt compound is represented by the following formula (A-1),

wherein, R 1 , R 2 , and R 3 each represent an alkyl group, an alkenyl group, an aryl group, or an aralkyl group, a part or all of hydrogen atoms in these groups may be substituted by a hydroxyl group(s), an alkoxy group(s), or a halogen atom(s), and these groups may include one or more of a carbonyl group and an ester bond; R 4 represents a single bond, an alkylene group, an alkenylene group, an arylene group, or an aralkylene group, a part or all of hydrogen atoms in these groups may be substituted by an alkoxy group(s) or a halogen atom(s), and these groups may include one or more of an ether bond, a carbonyl group, an ester bond, and an amide bond; and A − represents a non-nucleophilic counter ion.

First claim

What is claimed is:

1. A quaternary ammonium salt compound represented by the following formula (A-1),

wherein, R 1 , R 2 , and R 3 each represent a linear, branched or cyclic alkyl group or alkenyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group having 7 to 12 carbon atoms, a part or all of hydrogen atoms in these groups may be substituted by a hydroxyl group(s), an alkoxy group(s), or a halogen atom(s), and these groups may include one or more of a carbonyl group and an ester bond; R 4 represents a single bond, a linear, branched or cyclic alkylene group or alkenylene group having 1 to 12 carbon atoms, an arylene group having 6 to 20 carbon atoms, or an aralkylene group having 7 to 12 carbon atoms, a part or all of hydrogen atoms in these groups may be substituted by an alkoxy group(s) or a halogen atom(s), each of these groups of R 4 include an ester bond and may optionally include one or more of an ether bond, a carbonyl group, and an amide bond; and A − represents a non-nucleophilic counter ion.

2. A composition for forming a resist under layer film which comprises the quaternary ammonium salt compound according to claim 1 and a polysiloxane.

3. The composition for forming a resist under layer film according to claim 2 , wherein the polysiloxane includes one or more members selected from a compound represented by the following formula (B-1), a hydrolysate of the compound, a condensate of the compound, and a hydrolysis condensate of the compound,
R 1B B1 R 2B B2 R 3B B3 Si(OR 0B ) (4-B1-B2-B3 )  (B-1)

wherein, R 0B represents a hydrocarbon group having 1 to 6 carbon atoms; R 1B , R 2B , and R 3B each represent a hydrogen atom or a monovalent organic group; and B1, B2, and B3 are each 0 or 1, and satisfy 0≦B1+B2+B3≦3.

4. A patterning process which comprises the steps of:
forming an organic under layer film on a body to be processed by using a coating type organic under layer film material;
forming a resist under layer film on the organic under layer film by using the composition for forming a resist under layer film according to claim 2 ;
forming a resist pattern on the resist under layer film;
transferring the pattern to the resist under layer film by dry etching using the resist pattern as a mask;
transferring the pattern to the organic under layer film by dry etching using the resist under layer film to which the pattern has been transferred as a mask; and further
transferring the pattern to the body to be processed by dry etching using the organic under layer film to which the pattern has been transferred as a mask.

5. A patterning process which comprises the steps of:
forming an organic under layer film on a body to be processed by using a coating type organic under layer film material;
forming a resist under layer film on the organic under layer film by using the composition for forming a resist under layer film according to claim 3 ;
forming a resist pattern on the resist under layer film;
transferring the pattern to the resist under layer film by dry etching using the resist pattern as a mask;
transferring the pattern to the organic under layer film by dry etching using the resist under layer film to which the pattern has been transferred as a mask; and further
transferring the pattern to the body to be processed by dry etching using the organic under layer film to which the pattern has been transferred as a mask.

6. The patterning process according to claim 4 , wherein the coating type organic under layer film material contains an anthracene skeleton.

7. The patterning process according to claim 5 , wherein the coating type organic under layer film material contains an anthracene skeleton.

8. A patterning process which comprises the steps of:
forming an organic hard mask mainly comprising carbon on a body to be processed by a CVD method;
forming a resist under layer film on the organic hard mask by using the composition for forming a resist under layer film according to claim 2 ;
forming a resist pattern on the resist under layer film;
transferring the pattern to the resist under layer film by dry etching using the resist pattern as a mask;
transferring the pattern to the organic hard mask by dry etching using the resist under layer film to which the pattern has been transferred as a mask; and further
transferring the pattern to the body to be processed by dry etching using the organic hard mask to which the pattern has been transferred as a mask.

9. A patterning process which comprises the steps of:
forming an organic hard mask mainly comprising carbon on a body to be processed by a CVD method;
forming a resist under layer film on the organic hard mask by using the composition for forming a resist under layer film according to claim 3 ;
forming a resist pattern on the resist under layer film;
transferring the pattern to the resist under layer film by dry etching using the resist pattern as a mask;
transferring the pattern to the organic hard mask by dry etching using the resist under layer film to which the pattern has been transferred as a mask; and further
transferring the pattern to the body to be processed by dry etching using the organic hard mask to which the pattern has been transferred as a mask.

10. The patterning process according to claim 4 , wherein the body to be processed is a semiconductor apparatus substrate or a material in which any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film is formed on the semiconductor apparatus substrate.

11. The patterning process according to claim 5 , wherein the body to be processed is a semiconductor apparatus substrate or a material in which any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film is formed on the semiconductor apparatus substrate.

12. The patterning process according to claim 6 , wherein the body to be processed is a semiconductor apparatus substrate or a material in which any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film is formed on the semiconductor apparatus substrate.

13. The patterning process according to claim 7 , wherein the body to be processed is a semiconductor apparatus substrate or a material in which any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film is formed on the semiconductor apparatus substrate.

14. The patterning process according to claim 8 , wherein the body to be processed is a semiconductor apparatus substrate or a material in which any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film is formed on the semiconductor apparatus substrate.

15. The patterning process according to claim 9 , wherein the body to be processed is a semiconductor apparatus substrate or a material in which any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film is formed on the semiconductor apparatus substrate.

16. The patterning process according to claim 10 , wherein a metal constituting the body to be processed comprises silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, aluminum, in

Assignees

• Shinetsu Chemical Co

Inventors

• Ogihara Tsutomu
• Watanabe Takeru

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P50/266 Primary

  by vapour etching only · CPC title