Gap-fill methods
US-9209067-B2 · Dec 8, 2015 · US
US9490117B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9490117-B2 |
| Application number | US-201414588410-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 31, 2014 |
| Priority date | Dec 31, 2013 |
| Publication date | Nov 8, 2016 |
| Grant date | Nov 8, 2016 |
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A method of forming a pattern by directed self-assembly, comprising: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) applying a crosslinkable underlayer composition over the one or more layers to be patterned to form a crosslinkable underlayer, wherein the crosslinkable underlayer composition comprises a crosslinkable polymer comprising a first unit formed from a monomer of the following general formula (I-A) or (I-B): wherein: P is a polymerizable functional group; L is a single bond or an m+1-valent linking group; X 1 is a monovalent electron donating group; X 2 is a divalent electron donating group; Ar 1 and Ar 2 are trivalent and divalent aryl groups, respectively, and carbon atoms of the cyclobutene ring are bonded to adjacent carbon atoms on the same aromatic ring of Ar 1 or Ar 2 ; m and n are each an integer of 1 or more; and each R 1 is independently a monovalent group; (c) heating the crosslinkable underlayer to form a crosslinked underlayer; (d) forming a self-assembling layer comprising a block copolymer over the crosslinked underlayer; and (e) annealing the self-assembling layer. The methods and compositions find particular applicability in the manufacture of semiconductor devices or data storage devices for the formation of high resolution patterns.
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What is claimed is: 1. A method of forming a pattern by directed self-assembly, comprising: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) applying a crosslinkable underlayer composition over the one or more layers to be patterned to form a crosslinkable underlayer, wherein the crosslinkable underlayer composition comprises a crosslinkable polymer comprising a first unit formed from a monomer of the following general formula (I-A) or (I-B): wherein: P is a polymerizable functional group; L is a single bond or an m+1-valent linking group; X 1 is a monovalent electron donating group; X 2 is a divalent electron donating group; Ar 1 and Ar 2 are trivalent and divalent aryl groups, respectively, and carbon atoms of the cyclobutene ring are bonded to adjacent carbon atoms on the same aromatic ring of Ar 1 or Ar 2 ; m and n are each an integer of 1 or more; and each R 1 is independently a monovalent group; wherein the first unit is present in the crosslinkable polymer in an amount of from 3 to 10 mol %, based on the polymer; (c) heating the crosslinkable underlayer to form a crosslinked underlayer; (d) patterning the crosslinked underlayer; (e) forming a self-assembling layer comprising a block copolymer over the patterned crosslinked underlayer; and (f) annealing the self-assembling layer. 2. The method of claim 1 , wherein the patterned crosslinked underlayer is formed by photolithography and etching, wherein recesses exposing the substrate are disposed between adjacent patterns of the crosslinked underlayer. 3. The method of claim 2 , further comprising forming a brush layer in the recesses between adjacent patterns, wherein the self-assembling layer is formed on the patterns and the brush layer. 4. The method of claim 1 , wherein the patterns are formed by chemically altering selected regions of the crosslinked underlayer. 5. The method of claim 1 , wherein the polymerizable functional group P is chosen from the following general formulae (II-A) and (II-B): wherein R 4 is chosen from hydrogen, fluorine, C 1 -C 3 alkyl and C 1 -C 3 fluoroalkyl; and A is oxygen or is represented by the formula NR 5 , wherein R 5 is chosen from hydrogen and substituted and unsubstituted C 1 to C 10 linear, branched and cyclic hydrocarbons; and wherein R 6 is chosen from hydrogen, fluorine, C 1 -C 3 alkyl and C 1 -C 3 fluoroalkyl; and wherein L is chosen from optionally substituted linear or branched aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO—, —CONR 3 —, —CONH— and —OCONH—, wherein R 3 is chosen from hydrogen and substituted and unsubstituted C 1 to C 10 linear, branched and cyclic hydrocarbons. 6. The method of claim 1 , wherein the first unit is formed from a monomer of the general formula (I-A), wherein X 1 is chosen from C 1 -C 10 alkoxy, amine, sulfur, —OCOR 9 , wherein R 9 is chosen from substituted and unsubstituted C 1 to C 10 linear, branched and cyclic hydrocarbons, —NHCOR 10 , wherein R 10 is chosen from substituted and unsubstituted C 1 to C 10 linear, branched and cyclic hydrocarbons, and combinations thereof. 7. The method of claim 1 , wherein the first unit is formed from a monomer of the general formula (I-B), wherein X 2 is —O—, —S—, —COO—, —CONR 11 —, —CONH— and —OCONH—, wherein R 11 is chosen from hydrogen and substituted and unsubstituted C 1 to C 10 linear, branched and cyclic hydrocarbons, and combinations thereof. 8. The method of claim 1 , wherein the first unit is formed from a monomer chosen from one or more of the following monomers: 9. The method of claim 1 , wherein the polymer further comprises a second unit chosen from general formulae (III) and (IV): wherein R 7 is chosen from hydrogen, fluorine, C 1 -C 3 alkyl and C 1 -C 3 fluoroalkyl, R 8 is chosen from optionally substituted C 1 to C 10 alkyl, and Ar 3 is an optionally substituted aryl group.
Photolithographic processes · CPC title
of insulating materials · CPC title
Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title
Formation by thermal treatments (formation by plasma treatment H10P14/6319) · CPC title
carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title
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