Method of fabricating a BPM template using hierarchical BCP density patterns

Patent metadata

Field	Value
Publication number	US-9489974-B2
Application number	US-201414251303-A
Country	US
Kind code	B2
Filing date	Apr 11, 2014
Priority date	Apr 11, 2014
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

The embodiments disclose a method including patterning a template substrate to have different densities using hierarchical block copolymer density patterns in different zones including a first pattern and a second pattern, using a first directed self-assembly to pattern a first zone in the substrate using a first block copolymer material, and using a second directed self-assembly to pattern a second zone in the substrate using a second block copolymer material.

First claim

What is claimed is:

1. A method, comprising:
patterning a template substrate to have different densities using hierarchical block copolymer density patterns in a first zone and a second zone of the template including a first pattern and a second pattern;
applying a coating of a first buffer layer and a first photoresist layer to the second zone;
subsequent to the applying, using a first directed self-assembly to pattern the first zone in the substrate with a first pattern using a first block copolymer material to form an imprinted first pattern; and
using a second directed self-assembly to pattern the second zone in the substrate with a second pattern using a second block copolymer material to form an imprinted second pattern.

2. The method of claim 1 , wherein the template substrate includes a servo-integrated template including at least one first zone including a data zone and including at least one second zone including a servo zone, wherein a density of the data zone array is at least twice a density of the servo zone.

3. The method of claim 1 , wherein the hierarchical block copolymer density patterns in different zones includes the first zone has a pattern having a higher pattern density than a second zone pattern.

4. The method of claim 1 , wherein the first block copolymer material and the second block copolymer material include any combination of sphere-forming, cylinder-forming, or lamellae-forming BCP thin films.

5. The method of claim 1 , wherein the first pattern includes a two dimensional dots array pattern and the second pattern includes a one dimensional trench pattern.

6. The method of claim 1 , wherein the first and second block copolymer material have a natural periodicity value Lo=25 nm lamellae-forming to form line patterning 12.5 nm.

7. The method of claim 1 , wherein the first and second block copolymer materials include using combinations of block copolymer materials including two sphere-forming block copolymers for first and second zones, a sphere-forming block copolymer for second zones and a lamellae-forming lines block copolymer for first zones and a lamellae-forming lines block copolymer for both zones.

8. The method of claim 1 , wherein the first buffer layer includes chromium and hydrogen silsesquioxane, wherein the first directed self-assembly is used to pattern the first zone in the substrate in an overlay alignment process.

9. The method of claim 1 , further comprising applying a coating of a second buffer layer and further applying a second photoresist layer on the imprinted first pattern in the first zone, wherein the applying the coating of the second buffer layer and the applying the second photoresist layer occurs before using the second directed self-assembly to pattern the second zone in the substrate in an overlay alignment process.

10. The method of claim 9 , wherein the second buffer includes chromium and hydrogen silsesquioxane.

11. The method of claim 9 , wherein the applying the coating of the second buffer layer and the applying the second photoresist layer occurs after using the first directed self-assembly to pattern the first zone in the substrate with the first pattern.

12. The method of claim 1 , further comprising processes to trim down thickness of the imprinted first pattern that includes two dimensional dots array imprint before performing the first directed self-assembly in the first zone and to trim down thickness of the imprinted second pattern that includes one dimensional imprint trench before performing the second directed self-assembly in the second zone.

Assignees

• Seagate Technology Llc

Inventors

• Yang Xiaomin
• Xiao Shuaigang
• Lee Kim Y
• Wago Koichi
• Steiner Philip

Classifications

• G11B5/855 Primary

  Coating only part of a support with a magnetic layer · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G11B5/746 Primary

  Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit · CPC title