Method of manufacturing EUV photo masks
US-12085843-B2 · Sep 10, 2024 · US
Mask and fabrication method thereof, and method of patterning by using mask
US9488917B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9488917-B2 |
| Application number | US-201514769713-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 16, 2015 |
| Priority date | Oct 28, 2014 |
| Publication date | Nov 8, 2016 |
| Grant date | Nov 8, 2016 |
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Abstract
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Embodiments of the present disclosure provide a mask and a fabrication method thereof, and a method of patterning by using a mask. The mask comprises: a first substrate and a second substrate disposed oppositely; a liquid crystal layer located between the first substrate and the second substrate; a transparent conductive layer formed on the first substrate, the transparent conductive layer and the liquid crystal layer being located on a same side of the first substrate; and a mask pattern made of a non-transparent conductive material formed on the second substrate, wherein the mask pattern and the transparent electrode are configured to be capable of generating an electric field therebetween, so as to drive liquid crystal molecules in the liquid crystal layer to deflect.
First claim
Opening claim text (preview).
The invention claimed is: 1. A mask, comprising: a first substrate and a second substrate disposed oppositely; a liquid crystal layer located between the first substrate and the second substrate; a transparent conductive layer formed on the first substrate, the transparent conductive layer and the liquid crystal layer being located on a same side of the first substrate; and a mask pattern of a non-transparent conductive material formed on the second substrate, wherein the…
Assignees
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- G03F1/22Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US9488917B2 cover?
- Embodiments of the present disclosure provide a mask and a fabrication method thereof, and a method of patterning by using a mask. The mask comprises: a first substrate and a second substrate disposed oppositely; a liquid crystal layer located between the first substrate and the second substrate; a transparent conductive layer formed on the first substrate, the transparent conductive layer and …
- Who is the assignee on this patent?
- Boe Technology Group Co Ltd, Beijing Boe Optoelectronics Tech Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G03F1/22. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 08 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).