Radiation detector comprising a light reflective material

US9488738B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9488738-B2
Application numberUS-74039708-A
CountryUS
Kind codeB2
Filing dateOct 29, 2008
Priority dateNov 6, 2007
Publication dateNov 8, 2016
Grant dateNov 8, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A light-reflecting material of a radiation detector, which also comprises photo-detecting elements and imaging elements adjacent to the photo-detecting elements, is provided. Typically, epoxy resin is used as the light-reflecting material. A tough, pliable resin may be used for the photo-detecting elements. This has the advantage of reducing thermal stresses inside the radiation detector, thus reducing the risk of delamination due to e.g. temperature shifts. Moreover, the tough, pliable resin preferably also has a low refractive index, which may increase the scattering co-efficient of the resin as compared to epoxy resin, which has a refractive index of 1.58. The layer thickness of a low-refractive index resin may thereby be reduced as compared to the layer thickness of epoxy resin for a given level of optical crosstalk. Preferable resins are silicon resins and resins of thermoplastic fluoropolymers.

First claim

Opening claim text (preview).

The invention claimed is: 1. A radiation detector comprising: a photo-detecting element array having one or more photo-detecting elements, and optically coupled to one or more of the bottom faces of imaging elements; one or more imaging elements adjacent to the photo-detecting element array, wherein each imaging element comprises a scintillation crystal having multiple planar side faces, a top face, and a bottom face; and a light-reflecting material covering the side faces of the imaging elements, as well as a top surface of the one or more photo-detecting elements exposed between the imaging elements, wherein the light-reflecting material comprises only a single resin having a refractive index which is less than 1.45; wherein the resin has a modulus of elasticity of less than 2 GPa. 2. A radiation detector according to claim 1 , wherein the resin has a toughness of more than 0.6 J/m 3 . 3. A radiation detector according to claim 1 , wherein said resin comprises a silicon resin or a thermoplastic fluoropolymer. 4. A radiation detector according to claim 3 , wherein said light-reflecting material also comprises particles of a filler material dispersed in the silicon resin or thermoplastic fluoropolymer. 5. A radiation detector according to claim 4 , wherein the particles of filler material comprise particles of TiO 2 . 6. A radiation detector according to claim 4 , wherein the particles of filler material have a mean particle size of approximately 0.5 μm. 7. A radiation detector according to claim 1 , wherein the light-reflecting material additionally covers the top faces of the one or more imaging elements. 8. A radiation detector according to claim 1 , wherein the top faces of the imaging elements are covered by a material which is different from the light-reflecting material. 9. A radiation detector according to claim 1 , wherein the scintillation crystal comprises gadolinium oxysulphide (GOS). 10. A CT scanner comprising a radiation detector, wherein the radiation detector comprises: a photo-detecting element array having one or more photo-detecting elements, and optically coupled to one or more of the bottom faces of imaging elements; one or more imaging elements adjacent to the photo-detecting element array, wherein each imaging element comprises a scintillation crystal having multiple planar side faces, a top face, and a bottom face; and a light-reflecting material covering the side faces of the imaging elements, as well as a top surface of the one or more photo-detecting elements exposed between the imaging elements, wherein the light-reflecting material comprises only a single resin having a refractive index which is less than 1.45; wherein the resin has a modulus of elasticity of less than 2 GPa. 11. A CT scanner according to claim 10 , wherein the resin has a modulus of elasticity of less than 1 GPa. 12. A CT scanner according to claim 10 , wherein the resin has a toughness of more than 0.6 J/m 3 . 13. A CT scanner according to claim 10 , wherein said resin comprises a silicon resin or a thermoplastic fluoropolymer. 14. A CT scanner according to claim 13 , wherein said light-reflecting material also comprises particles of a filler material dispersed in the silicon resin or thermoplastic fluoropolymer. 15. A CT scanner according to claim 14 , wherein the particles of filler material comprise particles of TiO 2 . 16. A CT scanner according to claim 14 , wherein the particles of filler material have a mean particle size of approximately 0.5 μm. 17. A radiation detector according to claim 10 , wherein the top faces of the imaging elements are covered by a material which is different from the light-reflecting material. 18. A radiation detector comprising: a photo-detecting element array having one or more photo-detecting elements, and optically coupled to one or more of the bottom faces of imaging elements; one or more imaging elements adjacent to the photo-detecting element array, wherein each imaging element comprises a scintillation crystal having multiple planar side faces, a top face, and a bottom face; and a light-reflecting material covering the side faces of the imaging elements, as well as a top surface of the one or more photo-detecting elements exposed between the imaging elements, wherein the light-reflecting material comprises only a single resin having a refractive index which is less than 1.45; wherein the resin has a toughness of more than 0.6 J/m 3 . 19. A radiation detector according to claim 18 , wherein the resin has a modulus of elasticity of less than 2 GPa. 20. A radiation detector according to claim 18 , wherein said resin comprises a silicon resin or a thermoplastic fluoropolymer. 21. A radiation detector according to claim 20 , wherein said light-reflecting material also comprises particles of a filler material dispersed in the silicon resin or thermoplastic fluoropolymer. 22. A radiation detector according to claim 21 , wherein the particles of filler material comprise particles of TiO 2 . 23. A radiation detector according to claim 21 , wherein the particles of filler material have a mean particle size of approximately 0.5 μm. 24. A radiation detector according to claim 18 , wherein the light-reflecting material additionally covers the top faces of the one or more imaging elements. 25. A radiation detector according to claim 18 , wherein the top faces of the imaging elements are covered by a material which is different from the light-reflecting material. 26. A radiation detector according to claim 18 , wherein the scintillation crystal comprises gadolinium oxysulphide (GOS).

Assignees

Inventors

Classifications

  • Optical details, e.g. reflecting or diffusing layers · CPC title

  • G01T1/2018Primary

    Scintillation-photodiode combinations · CPC title

  • Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres · CPC title

  • Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk · CPC title

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What does patent US9488738B2 cover?
A light-reflecting material of a radiation detector, which also comprises photo-detecting elements and imaging elements adjacent to the photo-detecting elements, is provided. Typically, epoxy resin is used as the light-reflecting material. A tough, pliable resin may be used for the photo-detecting elements. This has the advantage of reducing thermal stresses inside the radiation detector, thus …
Who is the assignee on this patent?
Levene Simha, Wainer Naor, Koninklijke Philips Nv
What technology area does this patent fall under?
Primary CPC classification G01T1/2018. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 08 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).