Pattern-forming method

Patent metadata

Field	Value
Publication number	US-9487868-B2
Application number	US-201514591323-A
Country	US
Kind code	B2
Filing date	Jan 7, 2015
Priority date	Jan 7, 2014
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

A pattern-forming method includes providing a metal-containing film directly or indirectly on a substrate. A directed self-assembling film is provided directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed. At least a part of the plurality of phases of the directed self-assembling film is removed such that a pattern of the directed self-assembling film is formed. The metal-containing film and the substrate are sequentially etched using the pattern of the directed self-assembling film as a mask.

First claim

The invention claimed is:

1. A pattern-forming method comprising:
applying a composition directly or indirectly on a substrate to provide a metal-containing film directly or indirectly on the substrate;
providing a directed self-assembling film directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed;
removing at least a part of the plurality of phases of the directed self-assembling film such that a pattern of the directed self-assembling film is formed;
sequentially etching the metal-containing film and the substrate using the pattern of the directed self-assembling film as a mask to obtain a patterned substrate; and
totally removing the directed self-assembling film and the metal-containing film from the substrate after the patterned substrate is obtained,
wherein the composition comprises:
a hydrolyzable compound which is a metal compound comprising a hydrolyzable group, a hydrolysis product of a metal compound comprising a hydrolyzable group, a hydrolytic condensation product of a metal compound comprising a hydrolyzable group, or a combination thereof; and
an organic solvent.

2. The pattern-forming method according to claim 1 , wherein a metal element of the metal compound is a group 3 element, a group 4 element, a group 5 element, a group 6 element, a group 12 element, a group 13 element, or a combination thereof.

3. The pattern-forming method according to claim 2 , wherein the metal element of the metal compound is titanium, zirconium or a combination thereof.

4. The pattern-forming method according to claim 1 , wherein the directed self-assembling film is provided using a composition for forming a directed self-assembling film which comprises:
a block copolymer, a mixture of two or more types of polymers that are not compatible with each other, or a combination thereof; and
an organic solvent.

5. The pattern-forming method according to claim 1 , further comprising:
providing an organic underlayer film on the substrate before providing the metal-containing film,
wherein the organic underlayer film is etched when the metal-containing film and the substrate is sequentially etched.

6. The pattern-forming method according to claim 1 , wherein the composition further comprises water.

7. The pattern-forming method according to claim 1 , wherein the composition further comprises a crosslinking accelerator.

8. The pattern-forming method according to claim 1 , wherein the hydrolyzable compound is a metal alkoxide, a metal carboxylate, or a metal complex.

9. The pattern-forming method according to claim 6 , wherein a content of the water is 0.1 parts by mass to 10 parts by mass with respect to 100 parts by mass of the composition.

10. The pattern-forming method according to claim 6 , wherein a content of the water is 1 part by mass to 8 parts by mass with respect to 100 parts by mass of the composition.

11. The pattern-forming method according to claim 7 , wherein the crosslinking accelerator is an onium salt compound, an N-sulfonyloxyimide compound or both thereof.

12. The pattern-forming method according to claim 7 , wherein the crosslinking accelerator is an onium salt compound.

13. The pattern-forming method according to claim 7 , wherein a content of the crosslinking accelerator is no less than 0.1 parts by mass and no greater than 5 parts by mass with respect to 100 parts by mass of the hydrolyzable compound.

Assignees

• Jsr Corp

Inventors

• Komatsu Hiroyuki
• Naruoka Takehiko
• Minegishi Shinya
• Sakai Kaori
• Nagai Tomoki

Classifications

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• C09D153/00

  Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers · CPC title

• C08F297/02

  using a catalyst of the anionic type · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• C23F1/12

  Gaseous compositions · CPC title