Method for preparing a film and method for preparing an array substrate, and array substrate

Patent metadata

Field	Value
Publication number	US-9487867-B2
Application number	US-201414495409-A
Country	US
Kind code	B2
Filing date	Sep 24, 2014
Priority date	Jun 11, 2014
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

The present invention discloses a method for preparing a film and a method for preparing an array substrate, and an array substrate. The method for preparing a film comprises forming an AB alloy film subjected to oxidation treatment and forming a first metal A film, wherein the first metal A film is provided to contact with the AB alloy film subjected to oxidation treatment, wherein A is a first metal and B is a second metal, the second metal is selected from active metals in period 2 to period 4 of group 2, and the AB alloy film subjected to oxidation treatment is formed by forming an alloy film of a first metal A and a second metal B in the presence of an oxygen-containing gas.

First claim

What is claimed is:

1. A method for preparing a film, comprising:
forming an AB alloy film subjected to oxidation treatment,
wherein the AB alloy film consists of A and B, where A is a first metal and B is a second metal, the second metal is beryllium, and the AB alloy film subjected to oxidation treatment is formed by forming an alloy film of the first metal A and the second metal B in the presence of an oxygen-containing gas,
forming a first metal A film, wherein the first metal A film is provided to contact with the AB alloy film subjected to oxidation treatment.

2. The method according to claim 1 , wherein the oxygen-containing gas comprises oxygen and argon, and volume flow rate ratio of the oxygen to the argon is 1:30˜1:3.

3. The method according to claim 1 , wherein the alloy film of a first metal A and a second metal B is formed in the presence of an oxygen-containing gas at a temperature of 80° C. ˜250° C.

4. A method for preparing an array substrate, comprising
forming an AB alloy film subjected to oxidation treatment,
wherein the AB alloy film consists of A and B, where A is a first metal and B is a second metal, the second metal is beryllium, and the AB alloy film subjected to oxidation treatment is formed by forming an alloy film of the first metal A and the second metal B in the presence of an oxygen-containing gas,
forming a first metal A film, wherein the first metal A film is provided to contact with the AB alloy film subjected to oxidation treatment.

5. The preparation method according to claim 4 , wherein the first metal A film comprises a gate metal film for forming a gate electrode and a source-drain metal film for forming a source electrode and a drain electrode.

6. The preparation method according to claim 4 , wherein the oxygen-containing gas comprises oxygen and argon, and volume flow rate ratio of the oxygen to the argon is 1:30˜1:3.

7. The preparation method according to claim 4 , wherein the alloy film of a first metal A and a second metal B is formed in the presence of an oxygen-containing gas at a temperature of 80° C. ˜250° C.

8. An array substrate, comprising a pattern of a first metal A film and a pattern of an AB alloy film subjected to oxidation treatment, wherein the pattern of the first metal A film and the pattern of the AB alloy film subjected to oxidation treatment have positional correspondence and are provided to contact with each other, and
wherein the AB alloy film consists of A and B, where A is a first metal and B is a second metal, the second metal is beryllium, and the AB alloy film subjected to oxidation treatment is located between the first metal A film and a base substrate or between the first metal A film and a semiconductor layer.

9. The array substrate according to claim 8 , wherein the first metal A film comprises a gate metal film for forming a gate electrode and a source-drain metal film for forming a source electrode and a drain electrode.

10. The method according to claim 1 , wherein a molar content of the second metal B is 1%˜3% in an alloy of the first metal A and the second metal B.

11. The method according to claim 1 , wherein the first metal A is copper.

12. The method according to claim 4 , wherein a molar content of the second metal B is 1%˜3% in an alloy of the first metal A and the second metal B.

13. The method according to claim 4 , wherein the first metal A is copper.

14. The array substrate according to claim 8 , wherein a molar content of the second metal B is 1%˜3% in an alloy of the first metal A and the second metal B.

15. The array substrate according to claim 8 , wherein the first metal A is copper.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Yao Qi
• Zhang Feng
• Cao Zhanfeng
• Li Zhengliang

Classifications

• H10D64/013

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title

• H10W20/032 Primary

  of conductive barrier, adhesion or liner layers · CPC title

• C23C8/12 Primary

  using elemental oxygen or ozone · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title