Structure for circuit board used in electronic devices and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9485877-B2
Application number	US-201013498764-A
Country	US
Kind code	B2
Filing date	Sep 28, 2010
Priority date	Sep 28, 2009
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

A structure for which the electrical reliability is improved is provided. A structure in accordance with one embodiment includes an inorganic insulating layer including amorphous silicon oxide and having an elastic modulus which is 45 GPa or less. A method for manufacturing a structure in accordance with one embodiment includes applying an inorganic insulating sol including inorganic insulating particles composed of amorphous silicon oxide, and forming an inorganic insulating layer including amorphous silicon oxide and having an elastic modulus which is 45 GPa or less by heating the inorganic insulating particles at a temperature lower than a crystallization onset temperature of silicon oxide to each other.

First claim

The invention claimed is:

1. A structure, comprising:
an inorganic insulating layer that includes first inorganic particles including amorphous silicon oxide and second inorganic insulating particles including amorphous silicon oxide and has an elastic modulus which is 45 GPa or less,
the first inorganic insulating particles being connected to each other,
the second inorganic insulating particles being connected to each other via the first inorganic insulating particles and having a larger particle diameter than a particle diameter of the first inorganic insulating particles,
wherein an elastic modulus of the first inorganic insulating particles is smaller than an elastic modulus of the second inorganic insulating particles.

2. The structure according to claim 1 ,
wherein a peak value of Raman scattering intensity within a Raman shift range of 600 cm−1 or more and 620 cm−1 or less in the inorganic insulating layer is smaller than a peak value of Raman scattering intensity within a Raman shift range of 600 cm−1 or more and 620 cm−1 or less in the second inorganic insulating particles.

3. The structure according to claim 1 ,
wherein a proportion of three-membered ring structure to multi-membered ring structure of the first inorganic insulating particles is smaller than a proportion of three-membered ring structure to multi-membered ring structure of the second inorganic insulating particles.

4. The structure according to claim 1 ,
wherein the particle diameter of the first inorganic insulating particles is within a range of 3 nm or more and 110 nm or less.

5. The structure according to claim 4 ,
wherein the particle diameter of the second inorganic insulating particles is within a range of 0.5 μm or more and 5 μm or less.

6. The structure according to claim 1 ,
further comprising a first resin layer disposed on the inorganic insulating layer.

7. The structure according to claim 6 ,
further comprising a conductive layer disposed on a part of the first resin layer.

8. The structure according to claim 7 ,
further comprising a second resin layer disposed on a region of the first resin layer where the conductive layer is not disposed,
wherein one main surface of the conductive layer is in contact with the first resin layer;
a side surface and other main surface of the conductive layer are in contact with the second resin layer,
a thickness of the first resin layer is smaller than a thickness of the second resin layer, and
an elastic modulus of the first resin layer is smaller than an elastic modulus of the second resin layer.

9. The structure according to claim 8 ,
wherein the inorganic insulating layer is plural and laminated each other, and
adjacent inorganic insulating layers are connected to each other via the first and second resin layers.

10. The structure according to claim 1 ,
wherein an elastic modulus of the inorganic insulating layer is 10 GPa or more.

11. The structure according to claim 10 ,
wherein a hardness of the inorganic insulating layer is within a range of 0.5 GPa or more and 4 GPa or less.

12. A structure, comprising:
an inorganic insulating layer that includes first inorganic particles including amorphous silicon oxide and second inorganic insulating particles including amorphous silicon oxide and has an elastic modulus which is 45 GPa or less,
the first inorganic insulating particles being connected to each other,
the second inorganic insulating particles being connected to each other via the first inorganic insulating particles and having a larger particle diameter than a particle diameter of the first inorganic insulating particles,
wherein a proportion of three-membered ring structure to multi-membered ring structure of the first inorganic insulating particles is smaller than a proportion of three-membered ring structure to multi-membered ring structure of the second inorganic insulating particles.

Assignees

• Hayashi Katsura
• Kyocera Corp

Inventors

• Hayashi Katsura

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W70/635

  Through-vias · CPC title

• H10W70/69

  Insulating materials thereof · CPC title

• H05K3/4602

  characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated · CPC title