Techniques for a module connector design to improve pin connection
US-2024421516-A1 · Dec 19, 2024 · US
US9485864B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9485864-B2 |
| Application number | US-201414328765-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 11, 2014 |
| Priority date | Jul 26, 2013 |
| Publication date | Nov 1, 2016 |
| Grant date | Nov 1, 2016 |
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A bump structure provided on an electrode pad includes a solder member, and a metal layer having a cylindrical portion covering a side surface of the solder member, the metal layer being made of a metal which is higher in melting point than the solder member. An upper part of the cylindrical portion of the metal layer is opened wide.
Opening claim text (preview).
What is claimed is: 1. A bump structure provided on an electrode pad, comprising: a solder member; and a metal layer having a cylindrical portion covering a side surface of the solder member and a bottom portion covering a bottom surface of the solder member, the metal layer being made of a metal which is higher in melting point than the solder member, wherein an upper part of the cylindrical portion of the metal layer is opened wide, the bottom portion of the metal layer is electrically connected to the electrode pad, a bottom-side-part of the metal layer is embedded in an insulating resin layer formed on the electrode pad, and a top-side-part of the metal layer is protruded from the insulating resin layer, a top-part of the cylindrical portion of the metal layer is extended in a direction perpendicular to a central axis of the cylindrical portion, and the top-part of the cylindrical portion of the metal layer that is extended in the direction perpendicular to the central axis of the cylindrical portion is not in contact with the insulating resin layer. 2. The bump structure according to claim 1 , wherein the solder member is shaped like an inverted truncated-cone, whose upper part is wide. 3. The bump structure according to claim 1 , wherein: the solder member is made of Sn, Sn—Zn alloy, Sn—Cu alloy, Sn—In alloy, or Sn—Ag alloy; and the metal layer is made of Ni or Co.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
Pin grid array [PGA] · CPC title
Recess in conductor, e.g. in pad or in metallic substrate · CPC title
Cross-Sectional Technologies · mapped topic
Surface contacts, e.g. bumps (H05K3/4092 takes precedence; deposition of finish layers on pads H05K3/24; forming solder bumps H05K3/3465) · CPC title
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