Shortwave infrared camera with bandwidth restriction

Patent metadata

Field	Value
Publication number	US-9485439-B2
Application number	US-201414171859-A
Country	US
Kind code	B2
Filing date	Feb 4, 2014
Priority date	Dec 3, 2013
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

A camera comprises an image plane for capturing shortwave infrared wavelengths. The image plane captures only a portion of a shortwave infrared wavelength band, and excludes other wavelengths. A method of designing a camera is also disclosed.

First claim

The invention claimed is:

1. A camera comprising:
an image plane for capturing shortwave infrared wavelengths, with a band of said shortwave infrared wavelengths being defined across a range of 0.9-1.7 microns;
said image plane capturing only a portion of a shortwave infrared wavelength band, and excluding other wavelengths;
said image plane excluding wavelengths at both a shorter end of the shortwave infrared wavelength band and wavelengths at a longer end of the shortwave infrared wavelength band; and
said excluded wavelengths including wavelengths shorter than about 1.0 microns, and said excluded wavelengths including wavelengths longer than 1.5 microns.

2. The camera as set forth in claim 1 , wherein said excluded wavelengths include wavelengths shorter than approximately 1.1 micron.

3. The camera as set forth in claim 1 , wherein said camera includes a filter material for excluding said excluded wavelengths.

4. The camera as set forth in claim 3 , wherein said filter is placed directly on said image plane.

5. The camera as set forth in claim 3 , wherein said filter is a filter coating applied on said image plane.

6. The camera as set forth in claim 5 , wherein said image plane is altered such that it only captures images in said portion of said shortwave infrared wavelength band and excludes said excluded wavelengths.

7. The camera as set forth in claim 6 , wherein said image plane includes a semiconductor compound including indium arsenide and gallium arsenide and a ratio of said indium arsenide to said gallium arsenide is designed to exclude longer ones of said other wavelengths.

8. The camera as set forth in claim 6 , wherein at least one of a phosphide and aluminum may be adding to an absorbing layer to exclude shorter ones of said other wavelengths.

9. The camera as set forth in claim 3 , further comprising a housing for said camera including a window, and said filter is placed on said window.

10. The camera as set forth in claim 1 , wherein said image plane is altered such that it only captures images in said portion of said shortwave infrared wavelength band and excludes said excluded wavelengths.

11. A method of designing a camera including the steps of:
a) providing an image plane for capturing shortwave infrared wavelengths, with a band of shortwave infrared wavelengths being defined across a range of 0.9-1.7 microns; and
b) designing said camera such that said image plane captures a portion of a shortwave infrared wavelength band, and excludes other wavelengths, with the exclusion being achieved by providing a filter to filter said excluded other wavelengths, and/or by modifying the image plane such that it only captures said portion of said shortwave infrared wavelength bands, said image plane excluding wavelengths at both a shorter end of the shortwave infrared wavelength band and wavelengths at a longer end of the shortwave infrared wavelength band, and said excluded wavelengths including wavelengths shorter than about 1.0 microns, and said excluded wavelengths including wavelengths longer than 1.5 microns.

Assignees

• Sensors Unlimited Inc

Inventors

• Malchow Douglas Stewart
• Dixon Peter
• Rozploch Robert

Classifications

• G02B5/208 Primary

  for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation · CPC title

• H04N23/21 Primary

  from near infrared [NIR] radiation · CPC title

• H04N5/33 Primary

  Transforming infrared radiation (cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20) · CPC title