Semiconductor device and automobile

Patent metadata

Field	Value
Publication number	US-9484927-B2
Application number	US-201214653822-A
Country	US
Kind code	B2
Filing date	Dec 28, 2012
Priority date	Dec 28, 2012
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

A semiconductor device includes a semiconductor element having a gate and controlled with a gate voltage, a gate drive circuit which controls the gate voltage, an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode, a temperature sensing part which senses the temperature of the electrode, a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature, and a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited. The gate drive circuit controls the gate voltage according to the selective control signal.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor element having a gate and controlled with a gate voltage;
a gate drive circuit which controls the gate voltage;
an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode;
a temperature sensing part, in physical contact with the electrode, which senses the temperature of the electrode;
a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature; and
a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited,
wherein the gate drive circuit controls the gate voltage according to the selective control signal.

2. The semiconductor device according to claim 1 , wherein the generation section generates the first control signal by using a shape model of the electrode.

3. The semiconductor device according to claim 1 , wherein the generation section generates the first control signal by using map data in which the first control signal corresponding to the temperature of the electrode is stored.

4. The semiconductor device according to claim 1 , further comprising:
an element temperature sensing part attached to the semiconductor element; and
a third control signal generation section which generates, on the basis of the temperature sensed by the element temperature sensing part, a third control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the semiconductor element does not exceed a predetermined temperature,
wherein the comparison section compares the first control signal, the second control signal and the third control signal.

5. The semiconductor device according to claim 1 , wherein the electrode has a branch portion branching off from a main current path, and the temperature sensing part is attached to the branch portion.

6. A semiconductor device comprising:
a semiconductor element having a gate and controlled with a gate voltage;
a gate drive circuit which controls the gate voltage;
an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode;
a temperature sensing part, in direct contact with the electrode, which senses the temperature of the electrode; and
a control section which changes, on the basis of the temperature sensed by the temperature sensing part, the content of a control signal transmitted from the outside for control of the gate voltage so that the temperature of the electrode does not exceed a predetermined temperature,
wherein the gate drive circuit controls the gate voltage according to the control signal changed by the control section.

7. A semiconductor device comprising:
a semiconductor element having a gate and controlled with a gate voltage;
a gate drive circuit which controls the gate voltage;
an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode;
a temperature sensing part which senses the temperature of the electrode;
a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature;
a resin which covers the semiconductor element and the electrode so that a portion of the electrode is exposed out of the resin;
a metal part connected to the electrode in the resin and having its portion exposed out of the resin;
a socket having as a point of contact the portion of the metal part exposed out of the resin; and
a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited,
wherein the gate drive circuit controls the gate voltage according to the selective control signal, and
the temperature sensing part has such a shape as to be capable of being inserted in the socket.

8. An automobile comprising:
a semiconductor device having a semiconductor element having a gate and controlled with a gate voltage, a gate drive circuit which controls the gate voltage, an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode, a temperature sensing part, in direct contact with the electrode, which senses the temperature of the electrode, a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature, and a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited, wherein the gate drive circuit controls the gate voltage according to the selective control signal.

Assignees

• Aiko Mitsunori
• Araki Shintaro
• Mitsubishi Electric Corp

Inventors

• Aiko Mitsunori
• Araki Shintaro

Classifications

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/886

  Die-attach connectors and strap connectors · CPC title