Surface emitting laser, atomic oscillator, and manufacturing method of surface emitting laser

Patent metadata

Field	Value
Publication number	US-9484716-B2
Application number	US-201514925064-A
Country	US
Kind code	B2
Filing date	Oct 28, 2015
Priority date	Oct 29, 2014
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

A surface emitting laser includes: a substrate; and a laminated body disposed over the substrate, wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, and surface roughness Ra of an uppermost layer of the first mirror layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm.

First claim

What is claimed is:

1. A surface emitting laser comprising:
a substrate; and
a laminated body disposed over the substrate,
wherein the laminated body includes a first mirror layer disposed over the substrate, an active layer disposed over the first mirror layer, and a second mirror layer disposed over the active layer, and
a surface roughness Ra of an uppermost layer of the first mirror layer that abuts the active layer is greater than or equal to 0.45 nm and less than or equal to 1.0 nm.

2. The surface emitting laser according to claim 1 ,
wherein the first mirror layer includes a first layer formed of AlGaAs, and a second layer formed of AlGaAs of which an Al composition is lower than that of the first layer.

3. The surface emitting laser according to claim 2 ,
wherein a concentration of carbon doped onto the first layer is greater than or equal to 7.5×10 17 cm −3 and less than or equal to 2.0×10 18 cm −3 .

4. An atomic oscillator comprising the surface emitting laser according to claim 1 .

5. An atomic oscillator comprising the surface emitting laser according to claim 2 .

6. An atomic oscillator comprising the surface emitting laser according to claim 3 .

7. A manufacturing method of a surface emitting laser, comprising:
forming a first mirror layer over a substrate;
forming an active layer over the first mirror layer;
forming a second mirror layer over the active layer; and
forming a laminated body by patterning the first mirror layer, the active layer, and the second mirror layer,
wherein in the forming of the first mirror layer, a surface roughness Ra of an uppermost layer of the first mirror layer that is configured to abut the active layer is controlled to be greater than or equal to 0.45 nm and less than or equal to 1.0 nm by controlling a concentration of carbon doped onto the first mirror layer.

8. The manufacturing method of a surface emitting laser according to claim 7 ,
wherein the first mirror layer includes a first layer formed of AlGaAs, and a second layer formed of AlGaAs of which an Al composition is lower than that of the first layer.

9. The manufacturing method of a surface emitting laser according to claim 8 ,
wherein in the forming of the first mirror layer, the concentration of the carbon doped onto the first layer is greater than or equal to 7.5×10 17 cm −3 and less than or equal to 2.0×10 18 cm −3 .

10. The surface emitting laser according to claim 1 , wherein the uppermost layer of the first mirror layer directly abuts the active layer.

11. The manufacturing method of the surface emitting laser according to claim 7 , wherein the uppermost layer of the first mirror layer is configured to directly abut the active layer.

Assignees

• Seiko Epson Corp

Inventors

• Hagino Takashi

Classifications

• H03B17/00

  Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator · CPC title

• H01S5/3432 Primary

  the whole junction comprising only (AI)GaAs · CPC title

• H01S5/187

  using Bragg reflection · CPC title

• H01S5/18361

  Structure of the reflectors, e.g. hybrid mirrors · CPC title

• H01S5/0021

  Degradation or life time measurements · CPC title