Magnetic memory device

Patent metadata

Field	Value
Publication number	US-9484529-B2
Application number	US-201615098503-A
Country	US
Kind code	B2
Filing date	Apr 14, 2016
Priority date	Apr 21, 2010
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

First claim

What is claimed is:

1. A memory device comprising:
a free layer including Co;
a reference layer comprising;
a first contact magnetic layer including CoFeB;
a vertical magnetic layer including a first sub-layer layer and a second sub-layer; and
an exchange coupling layer disposed between the first sub-layer and the second sub-layer; and

a tunnel barrier layer disposed between the free layer and the reference layer.

2. The memory device of claim 1 , wherein the free layer further comprises Fe.

3. The memory device of claim 2 , wherein the free layer further comprises B.

4. The memory device of claim 3 , wherein the free layer further comprises Ni.

5. The memory device of claim 1 , further comprising a capping layer on the free layer.

6. The memory device of claim 5 , wherein the capping layer includes at least one of Ta, TaN or TiN.

7. The memory device of claim 1 , wherein the first sub-layer includes Co.

8. The memory device of claim 7 , wherein the first sub-layer further comprises Ir.

9. The memory device of claim 7 , wherein the second sub-layer includes Co.

10. The memory device of claim 9 , wherein the second sub-layer further comprises Pt.

11. The memory device of claim 1 , wherein the exchange coupling layer includes at least one of Ru, Rh, Cr or Ir.

12. A memory device comprising:
a first magnetic layer;
a non-magnetic layer on the first magnetic layer;
a second magnetic layer on the non-magnetic layer, the non-magnetic layer disposed between the first magnetic layer and the second magnetic layer;
a junction magnetic layer on second magnetic layer;
a tunnel barrier on the junction magnetic layer, the junction magnetic layer disposed between the first magnetic layer and the tunnel barrier;
a free layer on the tunnel barrier, the tunnel barrier disposed between the free layer and the junction magnetic layers; and
a capping layer.

13. The memory device of claim 12 , wherein magnetization directions of the first and second magnetic layers are perpendicular with respect to a plane of the tunnel barrier.

14. The memory device of claim 12 , wherein the junction magnetic layer comprises at least one of cobalt (Co), iron (Fe), or nickel (Ni).

15. The memory device of claim 12 , wherein the first magnetic layer comprise at least one of cobalt (Co) or platinum (Pt).

16. The memory device of claim 12 , wherein the first magnetic layer comprise at least one of Ta, Al, Cu, Au, Ag, TaN, or TiN.

17. The memory device of claim 12 , wherein the non-magnetic layer comprises an exchange coupling layer.

18. The memory device of claim 17 , wherein the exchange coupling layer comprise at least one of Ru, Rh, Cr or Ir.

19. The memory device of claim 12 , wherein the first magnetic layer, the non-magnetic layer and the second magnetic layer comprises a reference layer.

20. The memory device of claim 12 , wherein the first magnetic layer includes at least one of Co or Pt.

Assignees

• Lee Jangeum
• Oh Sechung
• Lee Jeahyoung
• Kim Woojin
• Jeong Junho
• Lim Woochang
• Samsung Electronics Co Ltd

Inventors

• Lee Jangeum
• Oh Sechung
• Lee Jeahyoung
• Kim Woojin
• Jeong Junho
• Lim Woochang

Classifications

• H01L43/10 Primary

  Electricity · mapped topic

• H01L27/222

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H10N50/85 Primary

  Materials of the active region · CPC title

• B82Y25/00 Primary

  Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title