Memory cells, methods of fabrication, and semiconductor devices
US-2015249202-A1 · Sep 3, 2015 · US
Magnetic memory device and method for forming the same
US9484526B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9484526-B2 |
| Application number | US-201514656659-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2015 |
| Priority date | Jul 18, 2014 |
| Publication date | Nov 1, 2016 |
| Grant date | Nov 1, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.
First claim
Opening claim text (preview).
What is claimed is: 1. A magnetic memory device, comprising: a magnetic tunnel junction pattern disposed on a substrate and including a fixed magnetic pattern, a free magnetic pattern and a tunnel barrier pattern located between the fixed magnetic pattern and the free magnetic pattern; an upper electrode disposed on the magnetic tunnel junction pattern; and a crystallinity conserving pattern disposed between the magnetic tunnel junction pattern and the upper electrode, wherein at least a portion of the crystallinity conserving pattern comprises an amorphous layer. 2. The device according to claim 1 , wherein the crystallinity conserving pattern includes at least one of Fe, Co, Ni, and Ta. 3. The device according to claim 1 , further comprising a first capping layer on the crystallinity conserving pattern. 4. The device according to claim 2 , wherein the crystallinity conserving pattern further comprising at least one of B, N, and P. 5. The device according to claim 4 , wherein the crystallinity conserving pattern comprises CoFeBTa. 6. The device according to claim 3 , wherein the first capping layer includes Ru. 7. The device according to claim 6 , wherein the crystallinity conserving pattern directly contacts the first capping layer. 8. The device according to claim 7 , further comprising a second capping layer disposed between the crystallinity conserving pattern and the free layer. 9. The device according to claim 8 , wherein the second capping layer includes Ru. 10. A magnetic memory device, comprising: a magnetic tunnel junction pattern disposed on a substrate, the magnetic tunnel junction pattern including a first fixed magnetic pattern, a first tunnel barrier pattern, a free magnetic pattern, a second tunnel barrier pattern, and a second fixed magnetic pattern, which are sequentially stacked; and a crystallinity conserving pattern located on the magnetic tunnel junction pattern and at least a portion of the crystallinity conserving pattern comprises an amorphous layer. 11. The device according to claim 10 , wherein the crystallinity conserving pattern includes at least one of Fe, Co, Ni, and Ta. 12. The device according to claim 11 , wherein the crystallinity conserving pattern further comprises at least one of B, N, and P. 13. The device according to claim 12 , wherein the crystallinity conserving pattern comprises CoFeBTa.
Assignees
Inventors
Classifications
- H01L43/08Primary
Electricity · mapped topic
details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title
Electricity · mapped topic
Write to perform initialising, forming process, electro forming or conditioning · CPC title
- G11C11/1675Primary
Writing or programming circuits or methods · CPC title
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Frequently asked questions
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- What does patent US9484526B2 cover?
- Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization te…
- Who is the assignee on this patent?
- Jeong Dae-Eun, Kim Sang-Yong, Song Yoon-Jong, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01L43/08. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).