Array substrate, manufacturing method thereof, display panel and display device

Patent metadata

Field	Value
Publication number	US-9484361-B2
Application number	US-201514804841-A
Country	US
Kind code	B2
Filing date	Jul 21, 2015
Priority date	Jan 4, 2015
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

The present disclosure provides an array substrate, a manufacturing method thereof, a display panel and a display device. A base substrate of the array substrate or a buffer layer on the base substrate is provided with a plurality of recessed sections, each recessed section is provided with at least one inclined surface, and a thin film transistor (TFT) is arranged at the inclined surface of each recessed section. The recessed sections are divided into at least two types. In the recessed sections of different types, angles between a horizontal surface of the array substrate and the inclined surfaces on which the TFTs are arranged are different from each other.

First claim

What is claimed is:

1. An array substrate comprising a plurality of thin film transistors (TFTs) and a plurality of recessed sections;
wherein each recessed section is provided with at least one inclined surface, one of the TFTs is arranged at the inclined surface of each recessed section;
the recessed sections are divided into at least two types; in the recessed sections of different types, angles between a horizontal surface of the array substrate and the inclined surfaces on which the TFTs are arranged are different from each other;
an active layer of each TFT is a poly-Si film formed by subjecting an a-Si film to excimer laser annealing treatment.

2. The array substrate according to claim 1 , further comprising a base substrate; wherein the plurality of recessed sections is formed in the base substrate, and the horizontal surface of the array substrate is a horizontal surface of the base substrate.

3. The array substrate according to claim 1 , further comprising a base substrate and a buffer layer arranged on the base substrate; wherein the plurality of recessed sections is formed in the buffer layer, and the horizontal surface of the array substrate is a horizontal surface of the base substrate.

4. The array substrate according to claim 3 , wherein the buffer layer is made of a photosensitive material.

5. The array substrate according to claim 1 , wherein the recessed sections are divided into two types comprising first recessed sections and second recessed sections;
an angle between the inclined surface of the first recessed section on which the TFT is arranged and the horizontal surface of the array substrate is greater than an angle between the inclined surface of the second recessed section on which the TFT is arranged and the horizontal surface of the array substrate; and
the TFT arranged within the first recessed section is a driving TFT, and the TFT arranged within the second recessed section is a switching TFT.

6. The array substrate according to claim 1 , wherein the angle between the horizontal surface of the array substrate and each of the inclined surfaces of the recessed sections on which the TFTs are arranged is greater than 0° and less than 80°.

7. The array substrate according to claim 1 , wherein each recessed section is of a depth less than 50 μm.

8. A method for manufacturing an array substrate, comprising:
forming a pattern comprising a plurality of recessed sections in a base substrate by a patterning process, each recessed section being provided with at least one inclined surface; and
forming a pattern comprising a thin film transistor (TFT) on the inclined surface of each recessed section;
wherein the recessed sections are divided into at least two types; in the recessed sections of different types, angles between a horizontal surface of the base substrate and the inclined surfaces on which the TFTs are arranged are different from each other.

9. The method according to claim 8 , wherein the recessed sections are divided into two types comprising first recessed sections and second recessed sections; an angle between the inclined surface of the first recessed section on which the TFT is arranged and the horizontal surface of the base substrate is greater than an angle between the inclined surface of the second recessed section on which the TFT is arranged and the horizontal surface of the base substrate; and
the step of forming the pattern comprising the TFT on the inclined surface of each recessed section comprises:
forming a pattern comprising a driving TFT on the inclined surface of each first recessed section, and forming a pattern comprising a switching TFT on the inclined surface of each second recessed section.

10. The method according to claim 8 , wherein the step of forming the pattern comprising the TFT on the inclined surface of each recessed section comprises forming an active layer of each TFT; and
the step of forming the active layer of each TFT comprises:
forming an a-Si film at each recessed section; and
irradiating a laser beam from an excimer laser in a direction perpendicular to the horizontal surface of the base substrate onto the a-Si film at each recessed section to melt and crystallize the a-Si film into a poly-Si film.

11. The method according to claim 8 , wherein the angle between the horizontal surface of the base substrate and each of the inclined surfaces of the recessed sections on which the TFTs are arranged is greater than 0° and less than 80°.

12. The method according to claim 8 , wherein each recessed section is of a depth less than 50 μm.

13. A method for manufacturing an array substrate, comprising steps of:
forming a buffer layer on a base substrate;
forming a pattern comprising a plurality of recessed sections in the buffer layer by a patterning process, each recessed section being provided with at least one inclined surface; and
forming a pattern comprising a thin film transistor (TFT) on the inclined surface of each recessed section;
wherein the recessed sections are divided into at least two types; in the recessed sections of different types, angles between a horizontal surface of the base substrate and the inclined surfaces on which the TFTs are arranged are different from each other.

14. The method according to claim 13 , wherein the recessed sections are divided into two types comprising first recessed sections and second recessed sections; an angle between the inclined surface of each first recessed section on which the TFT is arranged and the horizontal surface of the base substrate is greater than an angle between the inclined surface of each second recessed section on which the TFT is arranged and the horizontal surface of the base substrate; and
the step of forming the pattern comprising the TFT on the inclined surface of each recessed section comprises:
forming a pattern comprising a driving TFT on the inclined surface of each first recessed section, and forming a pattern comprising a switching TFT on the inclined surface of each second recessed section.

15. The method according to claim 14 , wherein the step of forming the pattern comprising a plurality of recessed sections in the buffer layer by a patterning process comprises:
exposing the buffer layer using a half-tone or gray-tone mask plate; and
developing the exposed buffer layer to form the pattern comprising a plurality of recessed sections.

16. The method according to claim 13 , wherein the step of forming the pattern comprising a plurality of recessed sections in the buffer layer by a patterning process comprises:
exposing the buffer layer using a half-tone or gray-tone mask plate; and
developing the exposed buffer layer to form the pattern comprising a plurality of recessed sections.

17. The method according to claim 13 , wherein the step of forming the pattern comprising the TFT on the inclined surface of each recessed section comprises forming an active layer of each TFT; and
the step of forming the active layer of each TFT comprises:
forming an a-Si film at each recessed section; and
irradiating a laser beam from an excimer laser in a direction perpendicular to the horizontal surface of the base substrate onto the a-Si film at each recessed section to melt and crystallize the a-Si film into a poly-Si film.

18. The method according to claim 13 , wherein the angle between the horizontal surface of the base substrate and each of the inclined surfaces of the recessed sections on which the TFTs are arranged is greater than 0° and less than 80°.

19. A display panel comprisin

Assignees

• Boe Technology Group Co Ltd

Inventors

• Sun Liang

Classifications

• H10P14/3816

  Pulsed laser beam · CPC title

• H10P14/3808

  using laser beams · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10D86/411

  characterised by materials, geometry or structure of the substrates · CPC title