Air gap contact formation for reducing parasitic capacitance

Patent metadata

Field	Value
Publication number	US-9484250-B2
Application number	US-201514643011-A
Country	US
Kind code	B2
Filing date	Mar 10, 2015
Priority date	Mar 10, 2015
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

A functional gate structure is located on a surface of a semiconductor material portion and including a U-shaped gate dielectric portion and a gate conductor portion. A source region is located on one side of the functional gate structure, and a drain region is located on another side of the functional gate structure. The source region and drain region both have a topmost surface that is above a topmost surface of the semiconductor material portion and another surface that touches a portion of the U-shaped gate dielectric. A contact structure is located on the topmost surface of the source region and/or the drain region. A middle-of-the-line air gap contact is located between the contact structure and the functional gate structure and above at least one of the source region and the drain region. The middle-of-the-line air gap contact is sealed by a portion of a conformal dielectric material.

First claim

What is claimed is:

1. A semiconductor structure comprising:
a functional gate structure located on a surface of a semiconductor material portion and including a U-shaped gate dielectric portion and a gate conductor portion;
a source region located on one side of the functional gate structure, wherein said source region has a topmost surface that is above a topmost surface of said semiconductor material portion and another surface that touches a portion of said U-shaped gate dielectric;
a drain region located on another side of the functional gate structure, said drain region has a topmost surface that is above a topmost surface of said semiconductor material portion and another surface that touches a portion of said U-shaped gate dielectric;
a contact structure located on said topmost surface of said at least one of said source region and said drain region;
a middle-of-the-line air gap contact located between said contact structure and said functional gate structure and above at least one of said source region and said drain region, wherein said middle-of-the-line air gap contact is sealed by a portion of a conformal dielectric material; and
a second functional gate structure comprising a second U-shaped gate dielectric portion and a second gate conductor portion and located adjacent said functional gate structure, wherein a second source region is located on one side of said functional gate structure and a second drain region is located on another side of said second functional gate structure, wherein said second source region is merged with said source region of said functional gate structure and wherein said contact structure and said middle-of-the line air gap contact are located above said merged source regions.

2. The semiconductor structure of claim 1 , wherein said semiconductor material portion comprises a semiconductor fin, and said functional gate structure straddles said semiconductor fin.

3. The semiconductor structure of claim 1 , wherein said source region and said drain region comprise a semiconductor material having an epitaxial relationship with a surface of said semiconductor material portion and having a faceted surface.

4. The semiconductor structure of claim 1 , wherein said functional gate structure further includes a gate cap portion located on a topmost surface of said gate conductor portion.

5. The semiconductor structure of claim 1 , wherein said contact structure comprises a contact metal liner and a contact metal portion, wherein said contact metal liner and said contact metal portion have topmost surfaces that are coplanar with each other.

6. The semiconductor structure of claim 5 , wherein said topmost surfaces of said contact metal liner and said contact metal portion are located above a topmost portion of said middle-of-the-line air gap contact.

7. The semiconductor structure of claim 1 , wherein other portions of said conformal dielectric material extend above said contact structure and said functional gate structure.

8. The semiconductor structure of claim 1 , wherein said semiconductor material portion is located on a surface of an insulator layer.

9. The semiconductor structure of claim 1 , wherein a planarizing dielectric material is located above one of said source region or said drain region not including said contact structure and said middle-of-the-line air cap contact.

10. The semiconductor structure of claim 1 , wherein said U-shaped gate dielectric portion comprises a dielectric material having a dielectric constant greater than silicon dioxide.

11. A semiconductor structure comprising:
a functional gate structure located on a surface of a semiconductor material portion and including a U-shaped gate dielectric portion and a gate conductor portion;
a source region located on one side of the functional gate structure, wherein said source region has a topmost surface that is above a topmost surface of said semiconductor material portion and another surface that touches a portion of said U-shaped gate dielectric;
a drain region located on another side of the functional gate structure, said drain region has a topmost surface that is above a topmost surface of said semiconductor material portion and another surface that touches a portion of said U-shaped gate dielectric;
a contact structure located on said topmost surface of said at least one of said source region and said drain region;
a middle-of-the-line air gap contact located between said contact structure and said functional gate structure and above at least one of said source region and said drain region, wherein said middle-of-the-line air gap contact is sealed by a portion of a conformal dielectric material; and
a second functional gate structure comprising a second U-shaped gate dielectric portion and a second gate conductor portion and located adjacent said functional gate structure, wherein a second source region is located on one side of said functional gate structure and a second drain region is located on another side of said second functional gate structure, wherein said second drain region is merged with said drain region of said functional gate structure, and wherein said contact structure and said middle-of-the line air gap contact are located above said merged drain regions.

Assignees

• IBM

Inventors

• Leobandung Effendi

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10W20/0765

  the thin functional dielectric layers being temporary, e.g. sacrificial layers · CPC title

• H10W20/495

  Capacitive arrangements or effects of, or between wiring layers · CPC title

• H10W20/0698

  Local interconnections · CPC title

• H10W20/072

  of dielectric parts comprising air gaps · CPC title