Semiconductor memory device and method for manufacturing same
US-2015380427-A1 · Dec 31, 2015 · US
US9484102B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9484102-B2 |
| Application number | US-201514674806-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 31, 2015 |
| Priority date | Nov 10, 2014 |
| Publication date | Nov 1, 2016 |
| Grant date | Nov 1, 2016 |
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A method of operating the semiconductor device includes performing an erase operation on a plurality of memory cells, performing a back-tunneling operation by injecting electrons into a storage node from a gate electrode of a memory cell, selected among the plurality of memory cells, and performing a program operation by injecting electrons into the storage node from a channel layer of the selected memory cell.
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What is claimed is: 1. A method of operating a semiconductor device, comprising: performing an erase operation on a plurality of memory cells; performing a back-tunneling operation by injecting electrons into a storage node from a gate electrode of a selected memory cell, which is selected from among the plurality of memory cells, wherein the electrons are injected into the gate electrode of the selected memory cell by applying a negative back-tunneling voltage; and performing…
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