Memory devices having source lines directly coupled to body regions and methods

US9484100B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9484100-B2
Application numberUS-201414299813-A
CountryUS
Kind codeB2
Filing dateJun 9, 2014
Priority dateJan 21, 2011
Publication dateNov 1, 2016
Grant dateNov 1, 2016

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Abstract

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Memory devices, memory cell strings and methods of operating memory devices are shown. Configurations described include directly coupling an elongated body region to a source line. Configurations and methods shown should provide a reliable bias to a body region for memory operations such as erasing.

First claim

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What is claimed is: 1. A method of operating a memory device, the method comprising: biasing a data line to a first potential, where the data line is coupled to a first end of a first string of memory cells and to a first end of a second string of memory cells; biasing a source to a second potential substantially the same as the first potential, where the source is coupled to a second end of the first string and to a second end of the second string of memory cells; deactivatin…

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What does patent US9484100B2 cover?
Memory devices, memory cell strings and methods of operating memory devices are shown. Configurations described include directly coupling an elongated body region to a source line. Configurations and methods shown should provide a reliable bias to a body region for memory operations such as erasing.
Who is the assignee on this patent?
Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification G11C16/10. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).