Microlithography projection optical system, tool and method of production

US9482961B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9482961-B2
Application numberUS-201414496367-A
CountryUS
Kind codeB2
Filing dateSep 25, 2014
Priority dateApr 7, 2006
Publication dateNov 1, 2016
Grant dateNov 1, 2016

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  1. Title

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  2. Abstract

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Abstract

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A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength λ from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of face shifting masks as objects to be imaged, in particular for EUV wavelengths.

First claim

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What is claimed is: 1. An optical system, comprising: a plurality of optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane, wherein a path of the radiation of the system has chief rays that are at an angle of 3° or more with respect to a normal at the object plane, the image field has a minimum radius of 300 mm, at the object plane all chief rays are parallel to each other within 0.5° , and the system is a microlithography projection optical system. 2. The optical system of claim 1 , wherein the chief rays are at an angle of 4° or more with respect to the normal at the object plane. 3. The optical system of claim 1 , further comprising a reflective object to be imaged in the object field. 4. The optical system of claim 1 , wherein the system is a catoptric projection objective. 5. The optical system of claim 1 , wherein at least one of the plurality of optical elements is a reflective element having a rotationally asymmetric surface positioned in a path of the radiation, and the rotationally asymmetric surface deviates from a best-fit rotationally symmetric surface by λ or more at one or more locations, where λ is a wavelength of the radiation. 6. The optical system of claim 5 , wherein the best-fit rotationally asymmetric surface deviates by about 0.1 λ or less from a surface corresponding to the equation: z = cr 2 1 + 1 - ( 1 + k ) ⁢ c 2 ⁢ r 2 + ∑ j = 2 α ⁢ C j ⁢ x m ⁢ y n where j = ( m + n ) 2 + m + 3 ⁢ n 2 + 1 , z is the sag of the surface parallel to an axis, c is the vertex curvature and k is the conical constant, C j is the coefficient of the monomial x m y n , and α is an integer. 7. The optical system of claim 5 , wherein the rotationally asymmetric surface deviates from the best-fit rotationally symmetric surface by about 10 λ or more at the one or more locations. 8. The optical system of claim 5 , wherein the rotationally asymmetric surface deviates from the best-fit rotationally symmetric surface by about 20 nm or more at the one or more locations. 9. The optical system of claim 1 , wherein the plurality of reflective elements define a meridional plane, and the plurality of reflective elements are mirror symmetric with respect to the meridional plane. 10. The optical system of claim 1 , wherein the plurality of elements comprises two elements that are reflective elements that have rotationally asymmetric surfaces positioned in a path of the radiation. 11. The optical system of claim 1 , wherein the plurality of reflective elements includes no more than two reflective elements that have a positive chief ray angle magnification. 12. The optical system of claim 1 , wherein the plurality of reflective elements includes no more than one reflective element that has a positive chief ray angle magnification. 13. The optical system of claim 1 , wherein the system has an image-side numerical aperture of about 0.2 or more. 14. The optical system of claim 1 , wherein the system has a rectangular field at the image plane, and the rectangular field in each of the orthogonal directions has a minimum dimension of about 1 mm or more. 15. The optical system of claim 1 , wherein static distortion at the image field is about 10 nm or less. 16. The optical system of claim 1 , wherein wavefront error at the image field is about λ/14 or less. 17. The optical system of claim 1 , wherein all chief rays are parallel to each other to within 0.05° at the object plane. 18. The optical system of claim 1 , wherein the plurality of reflective elements is telecentric at the image plane. 19. The optical system of claim 1 , wherein the system has an object-image shift of about 75 mm or less. 20. A tool, comprising: an illumination system; and a projection optical system, comprising: a plurality of optical elements arranged to image radiation from an object field in an object plane of the projection optical system to an image field in an image plane of the projection optical system, wherein a path of the radiation of the system has chief rays that are at an angle of 3° or more with respect to a normal at the object plane of the projection optical system, the image field has a minimum radius of 300 mm, at the object plane all chief rays are parallel to each other within 0.5° , and the tool is a microlithography tool. 21. The tool of claim 20 , wherein the illumination system, comprises: one or more elements arranged to direct radiation from a radiation source to an object positioned at the object plane of the projection optical system; and an element positioned at a location corresponding to an entrance pupil of the projection optical system. 22. The tool of claim 21 , further comprising the radiation source. 23. The tool of claim 20 , wherein the illumination system, comprises: one or more ele

Assignees

Inventors

Classifications

  • Mask illumination systems · CPC title

  • G03F7/702Primary

    Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems · CPC title

  • Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof · CPC title

  • Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems · CPC title

  • Catadioptric systems {(used in non-imaging applications G02B19/00)} · CPC title

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What does patent US9482961B2 cover?
A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength λ from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system c…
Who is the assignee on this patent?
Zeiss Carl Smt Gmbh
What technology area does this patent fall under?
Primary CPC classification G03F7/702. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).