System and method for predicting the temperature of a device

Patent metadata

Field	Value
Publication number	US-9482584-B2
Application number	US-201313776973-A
Country	US
Kind code	B2
Filing date	Feb 26, 2013
Priority date	Mar 28, 2012
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

A method of predicting a temperature includes operatively coupling a temperature prediction circuit to a device including a semiconductor chip, determining a correlation between a current and voltage of the temperature prediction circuit, and predicting a temperature with respect to power applied to the device using the determined correlation.

First claim

What is claimed is:

1. A method of predicting a temperature, comprising:
operatively coupling a temperature prediction circuit to a device comprising a semiconductor chip;
determining a correlation between a current and a voltage of the temperature prediction circuit;
predicting a temperature of the device with respect to power applied to the device using the determined correlation; and
maintaining an operational temperature of the device such that the operational temperature does not exceed a critical temperature by adjusting the power applied to the device based on the predicted temperature,
wherein the temperature prediction circuit comprises at least one resistor and at least one capacitor, and a plurality of nodes,
wherein a resistance of the resistor and a capacitance of the capacitor each comprise a value such that the power applied to the device and current applied to the temperature prediction circuit have a substantially linear relation with each other, and a temperature of the device and a voltage measured at the temperature prediction circuit have a substantially linear relation with each other.

2. The method of claim 1 , wherein the temperature prediction circuit and the device are mounted on a substrate, the device is included in a semiconductor package, and the temperature prediction circuit is disposed within the semiconductor package or outside of the semiconductor package.

3. The method of claim 1 , wherein the temperature prediction circuit is a Foster type resistor-capacitor (RC) network circuit or a Cauer type RC network circuit.

4. The method of claim 1 , wherein predicting the temperature comprises:
collecting data indicating an amount of the power applied to the device according to an operation of the device;
measuring an amount of a voltage at the temperature prediction circuit by applying a current to the temperature prediction circuit based on the collected data; and
predicting a temperature of the device by converting the measured amount of voltage to a temperature corresponding to the device.

5. The method of claim 1 , wherein the power applied to the device is adjusted to a maximum power value that does not exceed the critical temperature.

6. The method of claim 1 , wherein the device comprises:
a substrate;
the semiconductor chip mounted on the substrate;
a connection member electrically connecting the substrate and the semiconductor chip; and
a molding member covering the semiconductor chip and the substrate.

7. A method of predicting a temperature, comprising:
operatively coupling a temperature prediction circuit to a device comprising a semiconductor chip;
determining a correlation between a current and a voltage of the temperature prediction circuit;
predicting a temperature of the device with respect to power applied to the device using the determined correlation; and
maintaining an operational temperature of the device such that the operational temperature does not exceed a critical temperature by adjusting the power applied to the device based on the predicted temperature,
wherein predicting the temperature comprises:
collecting data indicating an amount of the power applied to the device according to an operation of the device;
measuring an amount of a voltage at the temperature prediction circuit by applying a current to the temperature prediction circuit based on the collected data; and
predicting a temperature of the device by converting the measured amount of voltage to a temperature corresponding to the device.

8. The method of claim 7 , wherein the temperature prediction circuit and the device are mounted on a substrate, the device is included in a semiconductor package, and the temperature prediction circuit is disposed within the semiconductor package or outside of the semiconductor package.

9. The method of claim 7 , wherein the temperature prediction circuit is a Foster type resistor-capacitor (RC) network circuit or a Cauer type RC network circuit.

10. The method of claim 7 , wherein the power applied to the device is adjusted to a maximum power value that does not exceed the critical temperature.

11. The method of claim 7 , wherein the device comprises:
a substrate;
the semiconductor chip mounted on the substrate;
a connection member electrically connecting the substrate and the semiconductor chip; and
a molding member covering the semiconductor chip and the substrate.

12. The method of claim 7 , wherein the temperature prediction circuit comprises at least one resistor and at least one capacitor, and a plurality of nodes.

13. The method of claim 12 , wherein a resistance of the resistor and a capacitance of the capacitor each comprise a value such that the power applied to the device and current applied to the temperature prediction circuit have a substantially linear relation with each other, and a temperature of the device and a voltage measured at the temperature prediction circuit have a substantially linear relation with each other.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Im Yun-Hyeok
• Park Kyol
• Cho Tae-Je

Classifications

• G01K7/42 Primary

  Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature · CPC title

• G01K7/34 Primary

  using capacitative elements (capacitors per se H01G) · CPC title

• G01K7/16

  using resistive elements · CPC title

• G05F1/567 Primary

  for temperature compensation · CPC title