Integration of active devices with passive components and MEMS devices

Patent metadata

Field	Value
Publication number	US-9481568-B2
Application number	US-201514695494-A
Country	US
Kind code	B2
Filing date	Apr 24, 2015
Priority date	Apr 2, 2015
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component-side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

First claim

The invention claimed is:

1. An integrated semiconductor structure comprising:
an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack that includes a first plurality of interconnect metals and vias that are alternately stacked;
a passive component comprising a microelectromechanical systems (MEMS) device having a component bottom plate connected to said conductive jumper by a component-side via/interconnect metal stack that includes a second plurality of interconnect metals and vias that are alternately stacked,
said component bottom plate being situated at an intermediate metal level higher than said device top electrode, and said conductive jumper being situated at a connecting metal level higher than said component bottom plate.

2. The integrated semiconductor structure of claim 1 , wherein a component top plate is situated at said connecting metal level.

3. The integrated semiconductor structure of claim 1 , wherein a component top plate is situated below said connecting metal level.

4. The integrated semiconductor structure of claim 1 , wherein said conductive jumper reduces undesirable charge flow into said active device during fabrication of said passive component.

5. The integrated semiconductor structure of claim 1 , wherein said active device is configured to provide a driving signal to said passive component through said conductive jumper.

6. The integrated semiconductor structure of claim 1 , wherein said MEMS device comprises an actuation plate.

7. The integrated semiconductor structure of claim 1 , wherein said MEMS device is a variable capacitor.

8. The integrated semiconductor structure of claim 1 , wherein said active device comprises at least one CMOS transistor.

Assignees

• Newport Fab Llc

Inventors

• Debar Michael J
• Howard David J
• Rose Jeff

Classifications

• B81B7/008

  MEMS characterised by an electronic circuit specially adapted for controlling or driving the same (B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00) · CPC title

• B81B2207/07

  Interconnects · CPC title

• B81B2207/015

  the micromechanical device and the control or processing electronics being integrated on the same substrate · CPC title

• B81B2201/0221

  Variable capacitors · CPC title

• B81C1/00246 Primary

  Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate · CPC title