System and method for a switch having a normally-on transistor and a normally-off transistor

Patent metadata

Field	Value
Publication number	US-9479159-B2
Application number	US-201414473101-A
Country	US
Kind code	B2
Filing date	Aug 29, 2014
Priority date	Aug 29, 2014
Publication date	Oct 25, 2016
Grant date	Oct 25, 2016

Abstract

In accordance with an embodiment, a circuit includes a normally-off transistor, and a normally-on transistor comprising a second load path terminal coupled to a first load path terminal of the normally off transistor, and a control terminal coupled to a second load path terminal of the normally-off transistor. The circuit further includes a driver circuit having an output coupled to a control terminal of the normally off transistor, a first power supply terminal configured to be coupled to a first power supply terminal of a first power supply, and a second power supply terminal configured to be coupled to a second power supply terminal of a second power supply. The second load path terminal of the normally on transistor is further configured to be coupled to a second power supply terminal of the first power supply and to a first power supply terminal of the second power supply.

First claim

What is claimed is:

1. A circuit comprising:
a normally-off transistor;
a normally-on transistor comprising a second load path terminal coupled to a first load path terminal of the normally-off transistor, and a control terminal coupled to a second load path terminal of the normally-off transistor; and
a driver circuit comprising an output coupled to a control terminal of the normally-off transistor, a first power supply terminal configured to be coupled to a first power supply terminal of a first power supply, and a second power supply terminal configured to be coupled to a second power supply terminal of a second power supply, wherein the second load path terminal of the normally-on transistor is further configured to be coupled to a second power supply terminal of the first power supply and to a first power supply terminal of the second power supply via a circuit path separate from a load path of the normally-off transistor.

2. The circuit of claim 1 , wherein the normally-on transistor comprises a GaN HEMT device, the first load path terminal of the normally-on transistor comprises a drain of the GaN HEMT device, the second load path terminal of the normally-on transistor comprises a source of the GaN HEMT device, and the control terminal of the normally-on transistor comprises a gate of the GaN HEMT device.

3. The circuit of claim 2 , wherein the normally-off transistor comprises an enhancement mode MOSFET transistor, the first load path terminal of the normally-off transistor comprises a drain of the enhancement mode MOSFET transistor, the second load path terminal of the normally-off transistor comprises a source of the enhancement mode MOSFET transistor, and the control terminal of the normally-off transistor comprises a gate of the enhancement mode MOSFET transistor.

4. The circuit of claim 1 , wherein:
the first power supply terminal of the first power supply is configured to have a higher voltage than the second power supply terminal of the first power supply; and
the first power supply terminal of the second power supply is configured to have a higher voltage than the second power supply terminal of the second power supply.

5. The circuit of claim 4 , further comprising the first power supply and the second power supply.

6. The circuit of claim 1 , further comprising an undervoltage lockout protection circuit configured to turn off the normally-off transistor when a voltage of the second power supply is below a threshold.

7. The circuit of claim 6 , further comprising a switch coupled between the control terminal of the normally-off transistor and the second load path terminal of the normally-off transistor, wherein the undervoltage lockout protection circuit is configured to close the switch when the voltage of the second power supply is below the threshold, and to open the switch when the voltage of the second power supply is above the threshold.

8. A method of operating a switch comprising a normally-off transistor having a first load path terminal coupled to a second load path terminal of a normally-on transistor, the method comprising:
applying a voltage at a second load path terminal of the normally-off transistor to a control terminal of the normally-on transistor;
turning on the normally-off transistor comprising applying a voltage potential from a first terminal of a first power supply to a control terminal of the normally-off transistor; and
turning off the normally-off transistor comprising applying a voltage potential from a second terminal of a second power supply to the control terminal of the normally-off transistor, wherein the first load path terminal of the normally-off transistor and the second load path terminal of the normally-on transistor are coupled to a second terminal of the first power supply and to a first terminal of the second power supply.

9. The method of claim 8 , further comprising:
measuring a first voltage between the first terminal of the second power supply and the second terminal of the second power supply; and
turning off the normally-off transistor when the first voltage is less than a threshold.

10. The method of claim 8 , wherein:
the normally-on transistor and the normally-off transistor each comprise FET transistors;
the second load path terminal of the normally-on transistor comprises a source of the normally-on transistor, and the control terminal of the normally-on transistor comprises a gate of the normally-on transistor;
the first load path terminal of the normally-off transistor comprises a drain of the normally-off transistor; and
the second load path terminal of the normally-off transistor comprises a source of the normally-off transistor.

11. The method of claim 10 , wherein the normally-off transistor comprises an enhancement mode MOSFET and the normally-on transistor comprises a GaN HEMT.

12. The method of claim 8 , wherein turning on the normally-off transistor and turning off the normally-off transistor comprises applying a switching signal to an input of a driver circuit and driving the control terminal of the normally-off transistor with an output of the driver circuit.

13. The method of claim 8 , further comprising magnetizing and demagnetizing an inductor in a switched-mode power supply using the switch.

14. A switch comprising:
an enhancement mode MOSFET transistor;
a GaN HEMT transistor comprising a source coupled to a drain of the enhancement mode MOSFET transistor, and a gate coupled to a source of the enhancement mode MOSFET transistor; and
a driver circuit comprising an output coupled to a gate of enhancement mode MOSFET transistor, a first power supply terminal configured to be coupled to a positive terminal of a first power supply, and a second power supply terminal configured to be coupled to a negative terminal of a second power supply, wherein the negative terminal of the first power supply, the positive terminal of the second power supply, the source of the GaN HEMT transistor and the drain of the enhancement mode MOSFET transistor are configured to be coupled together via a circuit path separate from a load path of the enhancement mode MOSFET transistor.

15. The switch of claim 14 , further comprising the first power supply and the second power supply.

16. The switch of claim 14 , further comprising:
a power supply sensing circuit coupled to the second power supply; and
a first switch coupled to the gate of the enhancement mode MOSFET transistor.

17. The switch of claim 16 , wherein the power supply sensing circuit is configured to turn-off the enhancement mode MOSFET transistor via the first switch when the power supply sensing circuit detects that a voltage of the second power supply is below a threshold.

18. The switch of claim 16 , wherein the switch is coupled between the gate of the enhancement mode MOSFET transistor and a source of the enhancement mode MOSFET transistor.

19. The switch of claim 14 , wherein the enhancement mode MOSFET transistor is an n-channel device.

20. The switch of claim 14 , further comprising a switched mode power supply coupled to the switch.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Zojer Bernhard

Classifications

• H02M2001/0054

  Electricity · mapped topic

• H02M7/1626

  with automatic control of the output voltage or current · CPC title

• H02M1/32

  Means for protecting converters other than automatic disconnection · CPC title

• H02M1/088

  for the simultaneous control of series or parallel connected semiconductor devices · CPC title

• H03K17/687 Primary

  the devices being field-effect transistors · CPC title