Electro-optical device stack, having patches covering layer breaches

Patent metadata

Field	Value
Publication number	US-9478765-B2
Application number	US-201314428769-A
Country	US
Kind code	B2
Filing date	Jun 14, 2013
Priority date	Sep 18, 2012
Publication date	Oct 25, 2016
Grant date	Oct 25, 2016

Abstract

A method of manufacturing an electro-optical device stack ( 10 ) includes providing a multi-layered structure comprising an electro-optical layer ( 13 ) that contacts a charge injection layer ( 12 ) comprising an acidic compound ( 12 m ). A resist layer ( 14 ) is deposited onto the electro-optical layer ( 13 ) and comprises a cationically-crosslinkable resist material ( 14 m ) that reacts adjacent breaches (12′,13′) in the electro-optical layer ( 13 ) by a cross-linking reaction. This reaction is induced by protons ( 12 p ) from the charge injection layer ( 12 ) and results in covering of the breaches (12′,13′) with patches ( 14 p ) comprising cross-linked resist material ( 14 c ). Parts of the resist material ( 14 m ) that have not cross-linked are removed, whereas the remaining patches ( 14 p ) provide electrical insulation between the charge injection layer ( 12 ) and a layer subsequently deposited onto the electro-optical layer ( 13 ).

First claim

The invention claimed is:

1. Method of manufacturing an electro-optical device stack, the method comprising
providing a charge injection layer contacting an electro-optical layer, the charge injection layer comprising an initiator compound;
depositing a resist layer onto the electro-optical layer, the resist layer comprising a resist material that reacts with the said initiator compound;
having the resist material react adjacent breaches in the electro-optical layer by a reaction induced and/or catalyzed by the initiator compound from the charge injection layer thereby forming patches of reacted resist material covering said breaches; and
removing parts of the resist material that have not reacted wherein the patches remain arranged for providing electrical insulation between the charge injection layer, and a layer subsequently deposited onto the electro-optical layer and patches.

2. Method according to claim 1 , wherein the charge injection layer comprises an electrode and the initiator compound comprises oxidizing material comprised in the electrode; and the method comprises
depositing a resist layer comprising a radical-polymerizable resist material onto the electro-optical layer;
having the resist material react adjacent breaches in the electro-optical layer by a radical-polymerization reaction induced by radicals from oxidizing material of the electrode thereby forming patches of radical-polymerized resist material covering said breaches; and
removing parts of the resist material that have not polymerized, wherein the patches remain arranged for providing electrical insulation between the charge injection layer and a layer subsequently deposited onto the electro-optical layer and patches.

3. Electro-optical device stack obtainable by the method of claim 2 , the device stack comprising a multi-layered structure comprising
a charge injection layer comprising an electrode comprising an oxidizing material;
a cathode layer; and
an electro-optical layer arranged between the charge injection layer and the cathode layer;
wherein breaches in the electro-optical layer between the charge injection layer and the cathode layer are covered with electrically-insulating patches comprising radical polymerized resist material.

4. Method according to claim 1 , wherein the initiator compound comprises an acidic compound comprised in the charge injection layer; and the method comprises
depositing a resist layer onto the electro-optical layer, the resist layer comprising a cationically-crosslinkable resist material;
having the resist material react adjacent breaches in the electro-optical layer by a cross-linking reaction induced by protons from the charge injection layer thereby forming patches of cross-linked resist material covering said breaches; and
removing parts of the resist material that have not cross-linked, wherein the patches remain arranged for providing electrical insulation between the charge injection layer and a layer subsequently deposited onto the electro-optical layer and patches.

5. Method according to claim 1 , further comprising
depositing a cathode layer onto the electro-optical layer and patches, wherein the patches are arranged for providing electrical insulation between the charge injection layer and the cathode layer.

6. Method according to claim 1 , wherein said having the resist material react comprises heating the device stack during a predetermined time period for growing the patches.

7. Method according to claim 1 , wherein the electro-optical layer has an average layer thickness of 10-500 nm.

8. Method according to claim 1 , wherein the charge injection layer comprises poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS).

9. Method according to claim 1 , wherein said depositing a resist layer onto the electro-optical layer, comprises depositing a solvent comprising the cationically-crosslinkable resist material and evaporating the solvent.

10. Electro-optical device stack made by a method comprising
providing a charge injection layer comprising an acidic compound and contracting an electro-optical layer;
depositing a resist layer onto the electro-optical layer, the resist layer comprising a cationically-crosslinkable resist material;
having the resist material react adjacent breaches in the electro-optical layer by a cross-linking reaction induced by protons from the charge injection layer, thereby forming electrically-insulating patches comprising cationically cross-linked resist material covering said breaches;
removing parts of the resist material that have not cross-linked; and
depositing a cathode layer onto the electro-optical layer and the electrically-insulating patches;
wherein the braches in the electro-optical layer are positioned between the charge injection layer and the cathode layer and are covered with the electrically-insulating patches comprising cationically cross-linked resist material.

11. Electronic device comprising an electro-optical device stack according to claim 10 .

12. System for manufacturing an electro-optical device stack, the system comprising
a supply system arranged for providing a substrate;
first deposition means arranged for depositing a charge injection layer onto the substrate, the charge injection layer comprising an initiator compound;
second deposition means arranged for depositing an electro-optical layer onto the charge injection layer;
resist layer deposition means arranged for depositing a resist layer onto the electro-optical layer, the resist layer comprising a resist material that reacts with the said initiator compound;
a controller configured for controlling the supply system, first deposition means, second deposition means, and resist layer deposition means for providing the substrate with a multi-layered structure comprising the electro-optical layer sandwiched between the charge injection layer and the resist layer;
the system further comprising resist layer removal means arranged for at least partially removing the said resist material, wherein the controller is configured for
controlling the device stack for having the resist material react adjacent breaches in the electro-optical layer by a reaction induced and/or catalyzed by the initiator compound from the charge injection layer thereby forming patches of cross-linked resist material covering said breaches; and
controlling the resist layer removal means, for removing parts of the resist material that have not reacted, wherein the patches remain arranged for providing electrical insulation between the charge injection layer and a layer subsequently deposited onto the electro-optical layer and patches.

13. System according to claim 12 , further comprising electrode layer deposition means, wherein the controller is arranged for
controlling the electrode layer deposition means for depositing a cathode layer onto the electro-optical layer and patches, wherein the patches are arranged for providing electrical insulation between the charge injection layer and the cathode layer.

14. System according to claim 12 , wherein the charge injection layer comprises an acidic compound and the resist layer comprises a cationically-crosslinkable resist material that reacts to the acidic compound by a crosslinking reaction.

15. System according to claim 12 , wherein the charge injection layer comprises an electrode comprising an oxidizing material and the resist layer comprises a radical-polymerizable resist material that reacts to radicals of the oxidizing material of the electrode by a polymerization reaction.

Assignees

• Nederlandse Organisatie Voor Toegepast—Natuurwetenschappelijk Onderzoek Tno
• Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno

Inventors

• Michels Jasper
• Blom Paulus Wilhelmus Maria
• Götz Georg Thomas Jakob

Classifications

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H01L51/0037

  Electricity · mapped topic

• H01L51/56

  Electricity · mapped topic

• H01L51/5012

  Electricity · mapped topic

• H01L2251/5392

  Electricity · mapped topic