Optoelectronic component having a UV-protecting substrate and method for producing the same

US9478761B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9478761-B2
Application numberUS-201314396780-A
CountryUS
Kind codeB2
Filing dateApr 11, 2013
Priority dateApr 26, 2012
Publication dateOct 25, 2016
Grant dateOct 25, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An optoelectronic component may include a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure. The protective layer has a lower transmission than the carrier for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in one wavelength range. The protective layer includes a glass.

First claim

Opening claim text (preview).

The invention claimed is: 1. An optoelectronic component, comprising: a carrier; a protective layer on or above the carrier; a first electrode on or above the protective layer; an organic functional layer structure on or above the first electrode; and a second electrode on or above the organic functional layer structure; wherein the protective layer comprises a matrix and UV-absorbing particles, wherein the matrix comprises a glass and wherein the UV-absorbing particles are formed as scattering centers and are applied on or above the carrier, and the UV-absorbing particles being embedded in the matrix such that the protective layer has a lower transmission than the carrier for electromagnetic radiation within at least one of a plurality of respective wavelength ranges having an upper range bound value that is less than approximately 400 nm; and wherein the protective layer has a thickness in a range of 1 μm to 100 μm. 2. The optoelectronic component as claimed in claim 1 , wherein the carrier is embodied in a planar fashion. 3. The optoelectronic component as claimed in claim 1 , wherein the carrier comprises a soft glass or is formed therefrom. 4. The optoelectronic component as claimed in claim 3 , wherein the soft glass is a soda-lime silicate glass. 5. The optoelectronic component as claimed in claim 1 , wherein the matrix of the protective layer has a refractive index of greater than approximately 1.7. 6. The optoelectronic component as claimed in claim 5 , wherein the matrix of the protective layer is embodied in an amorphous fashion. 7. The optoelectronic component as claimed in claim 1 , wherein the matrix of the protective layer is embodied in an amorphous fashion. 8. The optoelectronic component as claimed in claim 1 , wherein the matrix of the protective layer comprises or is formed from a substance or substance mixture from the group of glass systems: PbO-containing systems: PbO—B 2 O 3 , PbO—SiO 2 , PbO—B 2 O 3 —SiO 2 , PbO—B 2 O 3 —ZnO 2 , PbO—B 2 O 3 —Al 2 O 3 ; Bi 2 O 3 -containing systems: Bi 2 O 3 —B 2 O 3 , Bi 2 O 3 —B 2 O 3 —SiO 2 , Bi 2 O 3 —B 2 O 3 —ZnO, Bi 2 O 3 —B 2 O 3 —ZnO—SiO 2 . 9. The optoelectronic component as claimed in claim 8 , wherein the substance or the substance mixture of the matrix further comprises or is formed from a substance from the group of substances: Ce, Fe, Sn, Ti, Pr, Eu and/or V compounds. 10. The optoelectronic component as claimed in claim 1 , wherein one type of the UV-absorbing particles comprises or is formed from a substance or substance mixture or a stoichiometric compound from the group of substances: TiO 2 , CeO 2 , Bi 2 O 3 , ZnO, SnO 2 , phosphors: Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, SIONS, sialon, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and/or SCAP, halophosphate, glass particles, metallic nanoparticles. 11. The optoelectronic component as claimed in claim 1 , wherein the optoelectronic component is embodied as an organic light emitting diode or as an organic solar cell. 12. A method for producing an optoelectronic component, the method comprising: forming a protective layer on or above a carrier; forming a first electrode on or above the protective layer; forming an organic functional layer structure on or above the first electrode; and forming a second electrode on or above the organic functional layer structure; wherein the protective layer is designed having a matrix and UV-absorbing particles, the matrix comprising a glass and the UV-absorbing particles are formed as scattering centers and are applied on or above the carrier and being embedded in the matrix in such a way that the protective layer has a lower transmission of electromagnetic radiation than the carrier for electromagnetic radiation within at least one of a plurality of respective wavelength ranges having an upper range bound value that is less than approximately 400 nm; and wherein the protective layer is formed having a thickness in a range of 1 μm to 100 μm. 13. The method as claimed in claim 12 , wherein forming the protective layer comprises applying a glass solder powder to or above the carrier, wherein the glass solder powder is liquefied in order to form the protective layer. 14. The method as claimed in claim 13 , wherein the UV-absorbing particles are added to the glass solder powder before the glass solder powder is applied to the carrier. 15. The method as claimed in claim 14 , the glass solder powder are applied on or above the ply of UV-absorbing scattering centers, and the glass is liquefied in such a way that one part of the liquefied glass flows between the scattering centers toward the surface of the carrier in such a way that another part of the liquefied glass remains above the scattering centers. 16. The method as claimed in claim 13 , the glass solder powder are applied on or above the ply of UV-absorbing scattering centers, and the glass is liquefied in such a way that one part of the liquefied glass flows between the scattering centers toward the surface of the carrier in such a way that another part of the liquefied glass remains above the scattering centers.

Assignees

Inventors

Classifications

  • comprising scattering means · CPC title

  • Passivation; Containers; Encapsulations · CPC title

  • C03C8/14Primary

    Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions · CPC title

  • Organic PV cells · CPC title

  • Electricity · mapped topic

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What does patent US9478761B2 cover?
An optoelectronic component may include a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure. The protective layer has a lower transmission than the carrier for electromagnetic radiation having a wa…
Who is the assignee on this patent?
Osram Oled Gmbh
What technology area does this patent fall under?
Primary CPC classification C03C8/14. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 25 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).