Cu—Si—Co-based copper alloy for electronic materials and method for producing the same

US9478323B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9478323-B2
Application numberUS-201214006735-A
CountryUS
Kind codeB2
Filing dateMar 2, 2012
Priority dateMar 28, 2011
Publication dateOct 25, 2016
Grant dateOct 25, 2016

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder.

First claim

Opening claim text (preview).

The invention claimed is: 1. A copper alloy for electronic materials, comprising 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, optionally containing less than 1.0 mass % of Ni, further optionally containing at most 2.0 mass % in total of at least one selected from the group consisting of Cr, Mg, P, As, Sb, Be, B, Mn, Sn, Ti, Zr, Al, Fe, Zn, and Ag, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder, wherein the copper alloy satisfies the following formula: 60×(Co concentration)+400≧Kb≧60×(Co concentration)+275,  Formula b: wherein in the formula, the unit of Co concentration is mass % and Kb is spring limit. 2. The copper alloy according to claim 1 , wherein the copper alloy satisfies the following formula: −55×(Co concentration)+250×(Co concentration)+520≧YS≧−55×Co concentration) 2 +250×(Co concentration)+370,  Formula a: wherein in the formula, the unit of Co concentration is mass % and YS is 0.2% yield strength. 3. The copper alloy according to claim 1 , wherein YS is at least 500 MPa and Kb and YS satisfy the following relationship: 0.43×YS+215≧Kb≧0.23×YS+215,  Formula c: wherein YS is 0.2% yield strength, and Kb is spring limit. 4. The copper alloy according to claim 1 , wherein the Co to Si mass concentration ratio (Co/Si) satisfies the following relationship: 3≦Co/Si≦5. 5. A method for producing a copper alloy according to claim 1 , which comprises: step 1 of melting and casting an ingot of copper alloy having a composition according to claim 1 ; step 2 of heating the ingot at 900° C.-1050° C. for at least 1 hour, and thereafter subjecting it to a hot rolling; step 3 of cold rolling; step 4 of conducting solution treatment at 850-1050° C. and then cooling with an average cooling rate to 400° C. of at least 10° C./sec; first aging step 5 comprising three-stage aging, said three-stage aging comprising a first stage of heating the material at 480° C.-580° C. for 1-12 hours, then a second stage of heating the material at 430-530° C. for 1-12 hours, and then a third stage of heating the material at 300-430° C. for 4-30 hours, wherein the cooling rates from the first stage to the second stage and from the second stage to the third stage are at least 0.1° C./min respectively, and the temperature difference between the first stage and the second stage is 20-80° C., and the temperature difference between the second stage to the third stage is 20-180° C.; step 6 of cold rolling; and second aging step 7 of heating to at least 100° C. but less than 350° C. for 1-48 hours. 6. A wrought copper product made of a copper alloy according to claim 1 . 7. An electronic component provided with the copper alloy according to claim 1 .

Assignees

Inventors

Classifications

  • of copper or alloys based thereon · CPC title

  • by melting {(C22C1/1036 takes precedence)} · CPC title

  • H01B1/026Primary

    Alloys based on copper · CPC title

  • with nickel or cobalt as the next major constituent · CPC title

  • C22C9/00Primary

    Alloys based on copper · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9478323B2 cover?
A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respec…
Who is the assignee on this patent?
Okafuji Yasuhiro, Kuwagaki Hiroshi, Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification H01B1/026. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 25 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).