Graphene base and method of preparing the same

Patent metadata

Field	Value
Publication number	US-9475703-B2
Application number	US-201414288913-A
Country	US
Kind code	B2
Filing date	May 28, 2014
Priority date	Aug 5, 2009
Publication date	Oct 25, 2016
Grant date	Oct 25, 2016

Abstract

A graphene base, including: graphene; and a substrate, wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle.

First claim

What is claimed is:

1. A method of preparing a graphene base, the method comprising:
disposing a carbon-based material on at least one surface of a substrate;
disposing a graphitization catalyst layer on the carbon-based material in a way such that the carbon-based material is disposed between the graphitization catalyst layer and the substance; and
forming graphene by thermally treating the substrate, on which the carbon-based material and the graphitization catalyst layer are formed, under an inert atmosphere or a reducing atmosphere.

2. The method of claim 1 , wherein the carbon-based material is at least one selected from the group consisting of a carbon-containing polymer, a gaseous carbon-based material, amorphous carbon, and an organometallic compound.

3. The method of claim 1 , further comprising patterning the carbon-based material on the substrate.

4. The method of claim 1 , further comprising patterning the graphitization catalyst layer on the substrate.

5. The method of claim 1 , further comprising
forming a ceramic layer on the graphitization catalyst layer; and
patterning the ceramic layer.

6. The method of claim 5 , wherein the ceramic layer is an oxide layer.

7. The method of claim 1 , wherein the graphene has a patterned shape.

8. The method of claim 1 , wherein the carbon-based material has a patterned shape.

9. The method of claim 1 , wherein the graphitization catalyst layer has a patterned shape.

10. The method of claim 1 , wherein a length of at least one side of the graphene is equal to or greater than 1 millimeter.

11. The method of claim 1 , wherein the graphitization catalyst layer comprises at least one selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium, and iridium.

12. The method of claim 1 , wherein a thickness of the graphitization catalyst layer is about nanometer to about 1 micrometer.

13. The method of claim 1 , further comprising removing the graphitization catalyst layer by acid-treatment after the forming of the graphene.

14. The method of claim 13 , further comprising forming a pattern on the graphitization catalyst layer by selectively removing a portion of the graphitization catalyst layer.

15. The method of claim 1 , wherein a pattern layer is disposed on one surface of the substrate before the disposing of the carbon-based material on the substrate.

16. The method of claim 15 , wherein the graphene has a shape which is the same as a shape of the pattern layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Shin Hyeon-Jin
• Choi Won-Mook
• Choi Jae-Young
• Yoon Seon-Mi

Classifications

• Y10T428/24851

  Intermediate layer is discontinuous or differential · CPC title

• Y10T428/31786

  Of polyester [e.g., alkyd, etc.] · CPC title

• Y10T428/24802

  Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] · CPC title

• Y10T428/31678

  Of metal · CPC title

• H01J2329/0449

  Graphite · CPC title