Laser processing method and laser processing apparatus

Patent metadata

Field	Value
Publication number	US-9475152-B2
Application number	US-201414525798-A
Country	US
Kind code	B2
Filing date	Oct 28, 2014
Priority date	Nov 1, 2013
Publication date	Oct 25, 2016
Grant date	Oct 25, 2016

Abstract

The present invention provides a laser processing method in which a modified layer is formed inside a workpiece by irradiating the workpiece with a laser beam having such a wavelength as to be transmitted through the workpiece with the focal point of the laser beam positioned inside the workpiece. In the laser processing method, the spectral line width of the laser beam is set equal to or smaller than 10 pm.

First claim

What is claimed is:

1. A laser processing method comprising:
providing a workpiece including a plurality of devices that are partitioned by division lines formed in a lattice manner;
a step of setting spectral line width of a laser beam equal to or smaller than 10 pm; and
a step of forming a modified layer inside the workpiece, along one of the division lines, by irradiating the workpiece with the laser beam, which has such a wavelength that is configured to be transmitted through the workpiece, wherein a focal point of the laser beam is positioned inside the workpiece.

2. The laser processing method according to claim 1 , wherein:
the workpiece is a silicon substrate and a wavelength of the laser beam is set to 1064 nm.

3. The laser processing method according to claim 1 , wherein irradiating the workpiece with the laser comprises:
oscillating the laser beam from a laser beam oscillator;
focusing the laser beam from the laser beam oscillator with a focusing means prior to irradiating the workpiece;
wherein the laser beam oscillator includes a pumping light source, a laser medium, and an optical resonator, and further wherein the optical resonator includes a cyclic optical system that cycles light emitted by the pumping light source in one direction, and still further wherein the cyclic optical system is composed of a first half mirror, a Q-switch, a linear polarizing element that converts light that has passed through the Q-switch into linearly-polarized light, an etalon that reduces spectral line width of the light converted to the linearly-polarized light by the linear polarizing element, a Faraday rotator that rotates, by 45 degrees, a polarization plane of the light whose spectral line width is reduced by the etalon and blocks light from an opposite direction, a half-wave plate that returns the polarization plane rotated by the Faraday rotator to an original state, a second half mirror that reflects light that has passed through the half-wave plate to guide the light to a cyclic path, and a pair mirror that is disposed on the cyclic path and returns the light reflected by the second half mirror to the first half mirror,
wherein the light emitted by the pumping light source:
passes through a first half mirror, the laser medium, the Q switch, the linear polarizing element, the etalon, the Faraday rotator, the half-wave plate and the second half mirror, in order.

4. The laser processing method according to claim 1 , wherein:
the modified layer formed by the modified layer forming step has a width, in the thickness direction of the workpiece, of at least 50 μm and
the passing light, which is laser light that is passed to the devices during the modified layer forming step, is less than or equal to less than 7% of the total output.

5. A laser processing apparatus, comprising:
a chuck table that holds a workpiece;
a laser beam irradiator that performs laser processing for the workpiece held by the chuck table; and
a processing feed means that moves the chuck table relative to the laser beam irradiator in a processing feed direction,
wherein:
the laser beam irradiator includes a laser beam oscillator that oscillates a laser beam and a focusing means that focuses the laser beam oscillated from the laser beam oscillator and irradiates the workpiece held by the chuck table with the laser beam, and
spectral line width of the laser beam to be oscillated is set equal to or smaller than 10 pm in the laser beam oscillator,

wherein:
the laser beam oscillator includes a pumping light source, a laser medium, and an optical resonator,
the optical resonator includes a cyclic optical system that cycles light emitted by the pumping light source in one direction, and
the laser medium and an etalon are disposed in the cyclic optical system and the spectral line width of the laser beam is set equal to or smaller than 10 pm by the etalon,

wherein:
the cyclic optical system is composed of a first half mirror disposed on a side of the pumping light source, a Q-switch that is so disposed as to sandwich the laser medium with the first half mirror, a linear polarizing element that converts light that has passed through the Q-switch to linearly-polarized light, the etalon that reduces spectral line width of the light converted to the linearly-polarized light by the linear polarizing element, a Faraday rotator that rotates, by 45 degrees, a polarization plane of the light whose spectral line width is reduced by the etalon and blocks light from an opposite direction, a half-wave plate that returns the polarization plane rotated by the Faraday rotator to an original state, a second half mirror that reflects light that has passed through the half-wave plate to guide the light to a cyclic path, and a pair mirror that is disposed on the cyclic path and returns the light reflected by the second half mirror to the first half mirror.

6. The laser processing apparatus according to claim 5 , wherein:
a laser medium of the laser beam oscillator is YAG and a wavelength of the laser beam is set to 1064 nm.

Assignees

• Disco Corp

Inventors

• Morishige Yukio
• Iwashiro Kuniaki

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• B23K26/0006

  taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence) · CPC title

• B23K26/0853

  Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane · CPC title

• B23K2103/56

  being semiconducting · CPC title

• B23K26/53 Primary

  for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks · CPC title