Handle substrates of composite substrates for semiconductors

Patent metadata

Field	Value
Publication number	US-9469571-B2
Application number	US-201514698994-A
Country	US
Kind code	B2
Filing date	Apr 29, 2015
Priority date	Jul 18, 2013
Publication date	Oct 18, 2016
Grant date	Oct 18, 2016

Abstract

A handle substrate 1 is made of a translucent ceramics. An average density of pores having a size of 0.5 to 3.0 μm included in a surface region 2 A on the side of a bonding face 1 a of the handle substrate 1 is 50 counts/mm 2 or smaller. It is formed a region 3 , whose average density of pores having a size of 0.5 to 3.0 μm is 100 counts/mm 2 or larger, in the handle substrate 1 . The translucent ceramics has an average grain size of 5 to 60 μm.

First claim

The invention claimed is:

1. A handle substrate of a composite substrate for a semiconductor; said handle substrate comprising a translucent ceramic,
said handle substrate comprising a surface region on a side of a bonding face of said handle substrate, said surface region comprising pores having a size of 0.5 to 3.0 μm at an average density of 50 counts/mm 2 or smaller, and
said handle substrate comprising a region formed therein comprising pores having a size of 0.5 to 3.0 μm at an average density of 100 counts/mm 2 or larger,
wherein said translucent ceramic has an average grain size of 5 to 60 μm,
wherein said translucent ceramic has a relative density of 98 percent or higher, and
wherein a ratio of said average density of said pores in said surface region on a side of said bonding face to an average density of said pores in a region through which a central line of said substrate in a direction of thickness passes is 1:2 to 1:40.

2. The handle substrate of claim 1 , comprising pores having a size of 0.5 to 3.0 μm at an average density of 1000 counts/mm 2 or smaller in said handle substrate.

3. The handle substrate of claim 1 , wherein said translucent ceramic comprises polycrystalline alumina.

4. The handle substrate of claim 1 , wherein a microscopic central line average surface roughness Ra of said bonding face of said handle substrate is 3.0 nm or smaller, and
wherein an in-line transmittance of a light having a wavelength of 650 nm is 60 percent or lower.

5. A composite substrate for a semiconductor, said composite substrate comprising said handle substrate of claim 1 and a donor substrate bonded to said bonding face of said handle substrate directly or through a bonding region.

6. The composite substrate of claim 5 , wherein said donor substrate comprises monocrystalline silicon.

7. A handle substrate of a composite substrate for a semiconductor; said handle substrate comprising a translucent ceramic,
said handle substrate comprising a surface region on a side of a bonding face of said handle substrate, said surface region comprising pores having a size of 0.5 to 3.0 μm at an average density of 50 counts/mm 2 or smaller, and
said handle substrate comprising a region formed therein comprising pores having a size of 0.5 to 3.0 μm at an average density of 100 counts/mm 2 or larger,
wherein said translucent ceramic has an average grain size of 5 to 60 μm,

wherein said translucent ceramic has a relative density of 98 percent or higher,
wherein a microscopic central line average surface roughness Ra of said bonding face of said handle substrate is 3.0 nm or smaller, and
wherein an in-line transmittance of a light having a wavelength of 650 nm is 60 percent or lower.

8. The handle substrate of claim 7 , comprising pores having a size of 0.5 to 3.0 μm at an average density of 1000 counts/mm 2 or smaller in said handle substrate.

9. The handle substrate of claim 7 , wherein said translucent ceramic comprises polycrystalline alumina.

10. A composite substrate for a semiconductor, said composite substrate comprising said handle substrate of claim 7 and a donor substrate bonded to said bonding face of said handle substrate directly or through a bonding region.

11. The composite substrate of claim 10 , wherein said donor substrate comprises monocrystalline silicon.

Assignees

• Ngk Insulators Ltd

Inventors

• Iwasaki Yasunori
• Ide Akiyoshi
• Miyazawa Sugio

Classifications

• H10P90/1914

  using bonding · CPC title

• H10D86/201

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title

• C04B35/44 Primary

  based on aluminates · CPC title

• B32B2250/02

  2 layers · CPC title

• B32B18/00 Primary

  Layered products essentially comprising ceramics, e.g. refractory products · CPC title