Thermal inkjet printhead stack with amorphous metal resistor

Patent metadata

Field	Value
Publication number	US-9469107-B2
Application number	US-201314787729-A
Country	US
Kind code	B2
Filing date	Jul 12, 2013
Priority date	Jul 12, 2013
Publication date	Oct 18, 2016
Grant date	Oct 18, 2016

Abstract

The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous metal resistor, including an insulated substrate and a resistor applied to the insulated substrate. The resistor can include from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron; and from 5 atomic % to 90 atomic % each of a first and second metal of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, where the second metal is different than the first metal. The metalloid, the first metal, and the second metal can account for at least 70 atomic % of the amorphous thin metal film.

First claim

What is claimed is:

1. A thermal inkjet printhead stack with an amorphous metal resistor, comprising:
an insulated substrate:
a resistor applied to the insulated substrate, the resistor comprising an amorphous metal layer of:
5 atomic % to 90 atomic % of a metalloid, wherein the metalloid is carbon, silicon, or boron,
5 atomic % to 90 atomic % of a first metal, wherein the first metal is titanium, vanadium, chromium, cobalt, nickel, zirconiuM, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, and
5 atomic % to 90 atomic of a second metal, wherein the second metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, wherein the second metal is different than the first metal,

wherein the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous metal layer.

2. The thermal inkjet printhead stack of claim 1 , wherein the amorphous layer further comprises from 5 atomic % to 85 atomic % of a third metal, wherein the third metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, wherein the second metal is different than the first metal and the second metal.

3. The thermal inkjet printhead stack of claim 1 , further comprising a pair of conductors electrically coupled with the resistor, the pair of conductors including passivation layers applied to a top surface of the pair of conductors, but not to the resistor.

4. The thermal inkjet printhead stack of claim 1 , further comprising a thin electrical insulating film applied to the resistor.

5. The thermal inkjet printhead stack of claim 1 , Wherein the amorphous film of the resistor further comprises from 0.1 atomic % to 15 atomic % of a dopant, the dopant being nitrogen, oxygen, or mixtures thereof.

6. The thermal inkjet printhead stack of claim 1 , wherein the amorphous film of the resistor has a surface RMS roughness of less than 1 nm.

7. The thermal inkjet printhead stack of claim 1 , wherein the amorphous film of the resistor has a thermal stability of at least 400° C. and has an oxidation temperature of at least 700° C.

8. The thermal inkjet printhead stack of claim 1 , wherein the amorphous film of the resistor has an oxide growth rate of less than 0.05 nm/min.

9. The thermal inkjet printhead stack of claim 1 , wherein the amorphous film of the resistor has an atomic dispersity of at least 12% between at least two of the metalloid, the first metal, and the second metal relative to one another.

10. The thermal inkjet printhead stack of claim 1 , wherein the amorphous film of the resistor has an atomic dispersity of at least 12% between each of the metalloid, the first metal, and the second metal relative to one another.

11. The thermal inkjet printhead stack of claim 1 , wherein the amorphous film of the resistor has a bulk resistivity from about 100 to 10000 μΩ·cm.

12. The thermal inkjet printhead stack of claim 1 , wherein the resistor comprising the amorphous metal layer has a thickness of less than 0.8 micron.

13. The thermal inkjet printhead stack of claim 12 , wherein the resistor comprising the amorphous metal layer has a thickness of greater than 0.01 micron.

14. A method of manufacturing a thermal inkjet printhead stack with an amorphous metal resistor, comprising:
applying an amorphous film in the form of a thermal inkjet resistor to an insulated substrate, the amorphous film, comprising:
5 atomic to 90 atomic % of a metalloid, wherein the metalloid is carbon, silicon, or boron;
5 atomic % to 90 atomic % of a first metal, wherein the first metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum; and
5 atomic to 90 atomic of a second metal, wherein the second metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, and
wherein the second metal is different than the first metal;
applying a pair of conductors to the insulated substrate and in electrical communication with the amorphous thin metal resistor; and
applying passivation layers to the pair of conductors, thereby chemically and electrically isolating the conductors from contact with an inkjet ink when loaded.

15. The method of claim 14 , further comprising the step of applying one or more protective layers to the resistor.

16. The method of claim 14 , Wherein the amorphous thin metal resistor further comprises from 5 atomic % to 85 atomic % of a third metal, wherein the third metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum, Wherein the second metal is different than the first metal and the second metal.

17. A method of thermal inkjet printing, comprising thermally inkjetting a droplet of inkjet ink from an inkjet printhead using a heating resistor, comprising:
5 atomic % to 90 atomic % of a metalloid, wherein the metalloid is carbon, silicon, or boron;
5 atomic % to 90 atomic % of a first metal, wherein the first metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum; and
5 atomic to 90 atomic % of a second metal, wherein the second metal is titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium hafnium, tantalum, tungsten, iridium, or platinum, and wherein the second metal is different than the first metal.

Assignees

• Hewlett Packard Development Co Lp

Inventors

• Abbott Jr James Elmer
• Pugliese Roberto A
• Long Greg Scott

Classifications

• B41J2202/11

  characterised by specific geometrical characteristics · CPC title

• B41J2/14129 Primary

  Layer structure · CPC title

• B41J2/1642

  thin film formation by CVD [chemical vapor deposition] · CPC title

• B41J2/14016

  Structure of bubble jet print heads · CPC title

• B41J2/164

  thin film formation · CPC title