Chip packaging method, chip packaging module, and embedded substrate chip packaging structure
US-2024413138-A1 · Dec 12, 2024 · US
US9468136B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9468136-B2 |
| Application number | US-201414157352-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 16, 2014 |
| Priority date | May 31, 2011 |
| Publication date | Oct 11, 2016 |
| Grant date | Oct 11, 2016 |
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Methods and apparatus are provided for attaching a heat spreader to a die and includes disposing a solder thermal interface material between a first surface of a die and a first surface of a heat spreader without disposing a liquid flux between the die and the heat spreader to form an assembly, wherein at least one of the first surface of the die and a first surface of the heat spreader have disposed thereon a metallization structure comprising a transition layer and a sacrificial metallization layer, the sacrificial metallization layer disposed as an outer layer to the metallization structure adjacent the solder thermal interface material; and heating the assembly to melt the thermal interface and attach the die to the heat spreader.
Opening claim text (preview).
What is claimed is: 1. A method for attaching a heat spreader to a die, comprising: disposing a solder thermal interface material between a first surface of a die and a first surface of a heat spreader without disposing a liquid flux between the die and the heat spreader to form an assembly, wherein at least one of the first surface of the die and the first surface of the heat spreader have disposed thereon a metallization structure comprising a transition layer and a sacrificial metallization layer, the sacrificial metallization layer disposed as an outer layer to the metallization structure adjacent the solder thermal interface material; and heating the assembly in the presence of an inert oxide reducing gas under a first temperature profile to melt the solder thermal interface material thereby attaching the die to the heat spreader to form a soldered assembly, wherein the sacrificial metallization layer comprises a first metal soluble in the solder thermal interface material to form a eutectic composition with a second metal in the solder thermal interface material and create a package capable of undergoing subsequent reflow processes at equal or elevated temperature profiles. 2. The method of claim 1 , wherein the step of heating the assembly takes place in a reflow oven, and further comprising: purging the reflow oven with an inert gas prior to the step of heating the assembly; and introducing the oxide reducing gas into the purged reflow oven prior to the step of heating the assembly. 3. The method of claim 1 , wherein a metallization structure is provided on both the first surface of a die and a first surface of a heat spreader. 4. The method of claim 1 , wherein the solder thermal interface material comprises indium and during the heating step the first metal dissolves in the indium, forming a eutectic of lower melting point than the indium. 5. The method of claim 1 , wherein the solder thermal interface material comprises indium and during the heating step the indium melts and the first metal dissolves in the melted indium, allowing the melted indium to contact the transition layer. 6. The method of claim 5 , wherein the indium forms an intermetallic interface with the transition layer. 7. The method of claim 6 , wherein the transition layer comprises a metal having low solubility in indium such that the intermetallic interface formed is a stable intermetallic interface. 8. The method of claim 1 , wherein the solder thermal interface material comprises indium and the first metal comprises silver, and during the heating step the silver dissolves in the indium, forming a eutectic of lower melting point than the indium. 9. The method of claim 1 , wherein the solder thermal interface material comprises indium, the first metal comprises silver, and the transition layer comprises nickel, and during the heating step the indium melts and the silver dissolves in the melted indium, allowing the melted indium to contact the nickel and forming an In—Ni intermetallic interface. 10. The method of claim 1 , wherein the first metal comprises at least one of silver, tin, zinc and cadmium. 11. The method of claim 1 , wherein the transition layer comprises at least one of nickel and cobalt. 12. The method of claim 1 , wherein the die has a perimeter and the metallization structure extends beyond the perimeter of the die to provide a reservoir of adherent material for reflow operations. 13. The method of claim 1 , wherein the inert oxide reducing gas comprises a mixture of an organic acid in an oxygen-free carrier gas. 14. The method of claim 13 , wherein the organic acid comprises acetic, formic or other carboxylic forms. 15. The method of claim 1 , further comprising subjecting the assembly to a plurality of subsequent reflow processes, the plurality of subsequent reflow processes having higher temperature profiles than the first temperature profile. 16. The method of claim 1 , further comprising mounting the soldered assembly on a circuit board and reflow soldering the soldered assembly to the printed circuit board. 17. The method of claim 1 , further comprising mounting the soldered assembly on a circuit board and reflow soldering the soldered assembly to the printed circuit board wherein the reflow soldering is performed using a higher temperature profile than the first temperature profile. 18. The method of claim 1 , further comprising: attaching the spreader to the substrate using a lid seal cure process; and applying a force to the spreader during the curing process, and wherein the solder preform has a predetermined thickness to provide a desired bondline or standoff height that is substantially the same as a finished bondline after reflow. 19. The method of claim 18 , wherein the force is applied using a weight or a clip. 20. The method of claim 18 , wherein the lid seal cure process does not hermetically seal the solid volume of solder. 21. The method of claim 1 , wherein the a metallization layer on the heat spreader lacks a sacrificial metal layer. 22. The method of claim 1 , further comprising inserting a fixture between the heat spreader and the die to maintain a predetermined standoff height during the step of reflow soldering. 23. The method of claim 22 , further comprising forcing the heat spreader towards the die during the step of reflow soldering. 24. The method of claim 1 , wherein the solid volume of solder has a textured surface adjacent to the heat spreader or the die. 25. The method of claim 1 , wherein the solder thermal interface material comprises a first textured surface adjacent to the heat spreader and a second textured surface adjacent to the die. 26. The method of claim 1 , wherein the solder thermal interface material is one of a plurality of solder thermal interface materials arranged between the die and the heat spreader and spaced apart by at least one channel. 27. The method of claim 1 , wherein the solder thermal interface material comprises a plurality of slits extending from the center of the volume toward the periphery of the volume, wherein the slits are configured to close during the reflow solder process without forming voids. 28. The method of claim 1 , further comprising not cleaning the soldered assembly prior to a subsequent reflow application. 29. The method of claim 1 , wherein the first temperature profile includes a temperature sufficient to decompose an oxide reducing gas. 30. A soldered die and heat spreader assembly made by a process comprising the steps of: disposing a solder thermal interface material between a first surface of a die and a first surface of a heat spreader without disposing a liquid flux between the die and the heat spreader to form an assembly, wherein at least one of the first surface of the die and the first surface of the heat spreader have disposed thereon a metallization structure comprising a transition layer and a sacrificial metallization layer, the sacrificial metallization layer disposed as an outer layer to the metallization structure adjacent the solder thermal interface material; and heating the assembly in the presence of an inert oxide reducing gas under a first temperature profile to melt the solder thermal interface material thereby attaching the die to the heat spreader to form a soldered assembly, wherein the sacrificial metallization l
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