Magnetic electronic device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9466786-B2
Application number	US-201514807298-A
Country	US
Kind code	B2
Filing date	Jul 23, 2015
Priority date	Mar 7, 2013
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

A magnetic electronic device comprises a substrate, a first buffer layer, a first CoFeB layer, a first metal oxidation layer, a second buffer and a capping layer. The first buffer layer is disposed on the substrate. The first CoFeB layer is disposed on the first buffer layer. The first metal oxidation layer is disposed on the first CoFeB layer. The second buffer is disposed on the first metal oxidation layer, and the material of the second buffer layer includes platinum, palladium, tantalum or their any combination. The capping layer disposed on the second buffer. A manufacturing method of the magnetic electronic device is also disclosed.

First claim

What is claimed is:

1. A magnetic electronic device, comprising:
a substrate;
a first buffer layer disposed on the substrate;
a first CoFeB layer disposed on the first buffer layer;
a first metal oxidation layer disposed on the first CoFeB layer;
a second buffer layer directly disposed on the first metal oxidation layer, wherein the material of the second buffer layer includes platinum, palladium, tantalum or their any combination, the second buffer layer contacts and covers the first metal oxidation layer; and
a capping layer directly disposed on an upper surface of the second buffer layer, wherein the capping layer contacts and covers the upper surface of the second buffer layer.

2. The magnetic electronic device as recited in claim 1 , wherein the material of the first buffer layer includes platinum, palladium, tantalum or their any combination.

3. The magnetic electronic device as recited in claim 1 , wherein the material of the capping layer includes magnesium, aluminum, titanium or their any combination.

4. The magnetic electronic device as recited in claim 1 , wherein the thickness of the capping layer is between 1.1 nm and 6.0 nm.

5. The magnetic electronic device as recited in claim 4 , which experiences a rapid thermal annealing process.

6. The magnetic electronic device as recited in claim 5 , wherein the temperature of the rapid thermal annealing process is between 330° C. and 600° C. and the duration of the thermal annealing process is 30 seconds.

Assignees

• Nat Univ Tsing Hua

Inventors

• Lai Chih-Huang
• Wang Ding-Shuo

Classifications

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/12

  Electricity · mapped topic

• H01L43/10 Primary

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic