Semiconductor device

Patent metadata

Field	Value
Publication number	US-9466711-B2
Application number	US-86533009-A
Country	US
Kind code	B2
Filing date	Jan 28, 2009
Priority date	Jan 29, 2008
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

Between a source electrode ( 25 ) of a main device ( 24 ) and a current sensing electrode ( 22 ) of a current detection device ( 21 ), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator ( 36 ) is larger than a product of the resistor and maximal current flowing through the current detection device ( 21 ) with reverse bias. A diffusion length of a p-body region ( 32 ) of the main device ( 24 ) is shorter than that of a p-body ( 31 ) of the current detection device ( 21 ). A curvature radius at an end portion of the p-body region ( 32 ) of the main device ( 24 ) is smaller than that of the p-body ( 31 ) of the current detection device ( 21 ). As a result, at the inverse bias, electric field at the end portion of the p-body region ( 32 ) of the main device ( 24 ) becomes stronger than that of the p-body region ( 31 ) of the current detection device ( 21 ). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device ( 21 ).

First claim

The invention claimed is:

1. A semiconductor device comprising:
a main device with a gate insulating film;
an insulated gate semiconductor device with a gate insulating film for current detection and configured to be smaller in size than the main device, wherein an entirety of the gate insulating film of the main device is substantially same in thickness to an entirety of the gate insulating film of the insulated gate semiconductor device for current detection; and
a resistor connected to the main device and the insulated gate semiconductor device, wherein
under reverse bias, withstand voltage of the insulated gate semiconductor device is higher than withstand voltage of the main device; wherein

the main insulated gate semiconductor device comprises:
a first semiconductor region of a second conductivity type formed in a surface layer of a first principal surface of a first semiconductor layer of a first conductivity,
a first high-density semiconductor region of the first conductivity selectively formed in a surface layer of the first semiconductor region of the second conductivity type,
a first gate electrode formed on a first gate insulator film in a first trench reaching the first semiconductor layer of the first conductivity through the first high-density semiconductor region of the first conductivity and the first semiconductor region of the second conductivity type,
a first electrode contacting the first high-density semiconductor region of the first conductivity and the first semiconductor region of the second conductivity type, and
a second electrode formed at a side nearer to a second principal surface of the first semiconductor layer of the first conductivity, and

the insulated gate semiconductor device for current detection comprises:
a second semiconductor region of the second conductivity type formed in a surface layer of a first principal surface of a second semiconductor layer of the first conductivity,
a second high-density semiconductor region of the first conductivity selectively formed in a surface layer of the second semiconductor region of the second conductivity type,
a second gate electrode formed on a second gate insulator film in a second trench reaching the second semiconductor layer of the first conductivity through the second high-density semiconductor region of the first conductivity and the second semiconductor region of the second conductivity type,
a third electrode contacting the second high-density semiconductor region of the first conductivity and second semiconductor region of the second conductivity type, and
a fourth electrode formed at a side nearer to a second principal surface of the second semiconductor layer of the first conductivity, wherein

the resistor is connected with both the first electrode and the third electrode,
the second electrode and fourth electrode are short-circuited, and
an interval between adjacent first trenches is wider than an interval between adjacent second trenches.

2. The semiconductor device according to claim 1 , wherein
the main device and the insulated gate semiconductor device for current detection are formed on different semiconductor substrates.

3. The semiconductor device according to claim 1 , wherein
withstand voltage of a gate insulator film of the insulated gate semiconductor device is larger than a product of a resistance of the resistor and a maximum current flowing through the insulated gate semiconductor device under reverse bias.

4. A semiconductor device comprising:
a main active region through which main current flows;
a first main electrode;
a current detecting structure region that detects fluctuation of the main current flowing through the main active region;
a second main electrode that is separated from the first main electrode; and
a third main electrode, wherein
the main active region, the first main electrode, the current detecting structure region, and the second main electrode are formed on a first principal aspect of a substrate of a first conductivity type,
the third main electrode is formed on a second principal aspect of the substrate,
the main active region includes first trench gate structure units,
a first dummy trench structure unit that does not contribute to device control is formed between the first trench gate structure units,
the current detecting structure region includes second trench gate structure units,
a second dummy trench structure unit that does not contribute to device control is formed between the second trench gate structure units,
in the main active region, a first layer that is of a second conductivity type and electrically isolated from the first main electrode is formed between the first trench gate structure unit and the first dummy trench structure unit and between first dummy trench structure units, the first trench gate structure units being connected to each other, and
in the current detecting structure region, a second layer that is of the second conductivity type and electrically connected to the second main electrode is formed between the second trench gate structure unit and the second dummy trench structure unit and between the second dummy trench structure units, the second trench gate structure unit and the first trench gate structure unit being connected to each other.

5. A semiconductor device comprising:
a main active region through which main current flows;
a first main electrode;
a current detecting structure region that detects fluctuation of the main current flowing through the main active region;
a second main electrode that is separated from the first main electrode; and
a third main electrode, wherein
the main active region, the first main electrode, the current detecting structure region, and the second main electrode are formed on a first principal aspect of a substrate of a first conductivity type,
the third main electrode is formed on a second principal aspect of the substrate,
the main active region includes first trench gate structure units,
a first dummy trench structure unit that does not contribute to device control is formed between the first trench gate structure units,
the current detecting structure region includes second trench gate structure units,
a second dummy trench structure unit that does not contribute to device control is formed between the second trench gate structure units,
in the main active region, a first layer that is of a second conductivity type and electrically isolated from the first main electrode is formed between the first trench gate structure unit and the first dummy trench structure unit and between first dummy trench structure units, the first trench gate structure units being connected to each other, and
in the current detecting structure region, a second layer that is of the second conductivity type and electrically isolated from the second main electrode is formed between the second trench gate structure unit and the second dummy trench structure unit and between the second dummy trench structure units, the second trench gate structure unit and the first trench gate structure unit being connected to each other, and the second dummy trench structure unit being electrically connected to the second main electrode.

6. A semiconductor device comprising:
a main active region through which main current flows;
a first main electrode;
a current detecting structure region that detects fluctuation of the main current flowing through the main active region;
a second main electrode that is separated from the first main electrode; and
a third main electrode, wherein
the main active region, the first main electrode, the current detecting structure region, and the second main electrode are formed on a first principal aspect of a substrate o

Assignees

• Momota Seiji
• Abe Hitoshi
• Shiigi Takashi
• Fujii Takeshi
• Yoshikawa Koh
• Imagawa Tetsutaro
• Koyama Masaki
• Asai Makoto
• Fuji Electric Co Ltd

Inventors

• Momota Seiji
• Abe Hitoshi
• Shiigi Takashi
• Fujii Takeshi
• Yoshikawa Koh
• Imagawa Tetsutaro
• Koyama Masaki
• Asai Makoto

Classifications

• H10D84/817

  Combinations of field-effect devices and resistors only · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D62/393

  Body regions of DMOS transistors or IGBTs  (cell layout of DMOS H10D62/127) · CPC title

• H10D62/157

  Impurity concentrations or distributions · CPC title

• H10D62/127

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title