Low noise hybridized detector using charge transfer

Patent metadata

Field	Value
Publication number	US-9466637-B2
Application number	US-201514792065-A
Country	US
Kind code	B2
Filing date	Jul 6, 2015
Priority date	Aug 4, 2014
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.

First claim

The invention claimed is:

1. An infrared photodetector comprising:
a small bandgap layer of first conductivity type;
a large bandgap layer of first conductivity type overlying the small bandgap layer;
a standoff layer on a portion of the large bandgap layer;
a collection well of second conductivity type in the large bandgap layer and in contact with the small bandgap layer so that the small bandgap layer and the collection well form an infrared photodiode;
a transfer well of second conductivity type in the standoff layer and the large bandgap layer and spaced from the collection well and the small bandgap layer; and
a transistor that includes the collection well, the transfer well and a region between the collection well and the transfer well.

2. The infrared photodetector of claim 1 , wherein the transistor further includes:
a drain electrode coupled to the transfer well; and
a gate electrode coupled to the region between the collection well and the transfer well.

3. The infrared photodetector of claim 2 , wherein the gate and drain electrodes comprise Ti, Pt, Au, Ni, Cu, or combinations thereof.

4. The infrared photodetector of claim 2 , and further comprising:
an insulator layer between the gate electrode and the large bandgap layer.

5. The infrared photodetector of claim 1 wherein the transfer well extends to a top surface of the standoff layer.

6. The infrared photodetector of claim 1 wherein the collection well extends to a top surface of the large bandgap layer.

7. The infrared photodetector of claim 1 , wherein the standoff layer comprises a small bandgap semiconductor.

8. The infrared photodetector of claim 1 , wherein the small bandgap layer and the standoff layer comprise InGaAs, and the large bandgap layer comprises InP.

9. An infrared photodetector comprising:
a first small bandgap layer of first conductivity type;
a large bandgap layer of first conductivity type on the first small bandgap layer of first conductivity type;
a second small bandgap layer on a portion of the large bandgap layer;
a collection well of second conductivity type located in the first small bandgap layer and the large bandgap layer;
a transfer well of second conductivity type located in the second small bandgap layer and the first large bandgap layer, the transfer well being spaced laterally from the collection well and vertically from the first small bandgap layer; and
electrodes positioned to cause transfer of charge from the collection well to the transfer well.

10. The infrared photodetector of claim 9 , wherein the collection well extends to a top surface of the large bandgap layer.

11. The infrared photodetector of claim 9 , wherein the transfer well extends to a top surface of the second small bandgap layer.

Assignees

• Sensors Unlimited Inc

Inventors

• Dixon Peter
• Masaun Navneet

Classifications

• H10D64/665

  the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum (having lateral variation H10D64/671) · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title

• H10D62/85

  being Group III-V materials, e.g. GaAs · CPC title

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title