Alkali-developable curable composition, insulating thin film using the same, and thin film transistor

Patent metadata

Field	Value
Publication number	US-9464172-B2
Application number	US-74689108-A
Country	US
Kind code	B2
Filing date	Dec 5, 2008
Priority date	Dec 10, 2007
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

An object of the present invention is to provide a polysiloxane compound that can be developed in an aqueous alkali solution and can yield a cured product or thin film having superior heat-resistant transparency and insulating properties, a curable composition thereof, and a thin film transistor provided with a passivation layer or gate insulator using the same, and the present invention relates to a polysiloxane compound having at least one photopolymerizable functional group in a molecule thereof, and having at least one member selected from the group consisting of an isocyanuric acid backbone structure, a phenolic hydroxyl group and a carboxyl group within the same molecule, to a curable composition containing the polysiloxane compound, and to a cured product thereof.

First claim

The invention claimed is:

1. An alkali-developable resist material, produced by using a curable composition comprising a polysiloxane compound and at least one selected from the group consisting of a cationic polymerization initiator, a radical polymerization initiator and a photoacid generator, wherein the polysiloxane compound comprises:
at least one photopolymerizable functional group; and
at least one member selected from the group consisting of structures represented by the following formulas (X1), and the following formula (X2)

2. The alkali-developable resist material according to claim 1 , wherein the photopolymerizable functional group is at least one member selected from the group consisting of an epoxy group, a crosslinkable silicon group and a (meth)acryloyl group.

3. The alkali-developable resist material according to claim 1 , wherein at least one of the photopolymerizable functional group is an alicyclic epoxy group or a glycidyl group.

4. The alkali-developable resist material according to claim 1 , wherein at least one of the photopolymerizable functional group is an alkoxysilyl group.

5. The alkali-developable resist material according to claim 4 , wherein the alkoxysilyl group is an alkoxysilylethyl group or an alkoxysilylpropyl group.

6. The alkali-developable resist material according to claim 4 , wherein the alkoxysilyl group is at least one member selected from the group consisting of an (alkoxysilylethyl)dimethylsilyl group, (alkoxysilylethyl)diphenylsilyl group, (alkoxysilylpropyl)dimethylsilyl group and (alkoxysilylpropyl)diphenyl group.

7. The alkali-developable resist material according to claim 1 ,
wherein the polysiloxane compound is a hydrosilylation reaction product of the following compounds (α1) to (γ1):
(α1) an organic compound having, in a molecule thereof, one or more carbon-carbon double bonds that have reactivity with SiH groups, and having, within the same molecule, at least one member selected from the group consisting of structures represented by the following formula (X1) and the following formula (X2);

(β) a polysiloxane compound having at least two SiH groups in a molecule thereof; and
(γ1) a compound having, in a molecule thereof, at least one photopolymerizable functional group and one or more carbon-carbon double bonds that have reactivity with SiH groups.

8. The alkali-developable resist material according to claim 1 , wherein the polysiloxane compound is a hydrosilylation reaction product of the following compounds (α1) to (γ1):
(α1) an organic compound having, in a molecule thereof, one or more carbon-carbon double bonds that have reactivity with SiH groups, and having, within the same molecule, at least one member selected from the group consisting of structures represented by the following formulas (X1) and the following formula (X2;

(α2) a compound having, in a molecule thereof, one or more carbon-carbon double bonds that have reactivity with SiH groups;
(β3) a polysiloxane compound having at least two SiH groups in a molecule thereof; and
(γ1) a compound having, in a molecule thereof, at least one photopolymerizable function group and one or more carbon-carbon double bonds that have reactivity with SiH groups.

9. The alkali-developable resist material according to claim 7 , wherein the compound (α1) is at least one member selected from the group consisting of compounds represented by the following general formulas (I):

wherein, R 2 represents a monovalent organic group having 1 to 50 carbon atoms, each R 2 may be the same or different, and at least one R 2 contains a carbon-carbon double bond having reactivity with SiH groups.

10. The alkali-developable resist material according to claim 7 , wherein the compound (α1) is at least one member selected from the group consisting of diallyl isocyanuric acid and monoallyl isocyanuric acid.

11. The alkali-developable resist material according to claim 8 , wherein the compound (α2) is a compound represented by the following general formula (II):

wherein, R 3 represents a monovalent organic group having 1 to 50 carbon atoms, each R 3 may be the same or different, and at least one R 3 contains a carbon-carbon double bond having reactivity with SiH groups.

12. The alkali-developable resist material according to claim 7 , wherein the compound (β) is a cyclic polysiloxane compound having an SiH group represented by the following general formula (III):

wherein, R 4 and R 5 represent organic groups having 1 to 10 carbon atoms and may be the same or different, n represents a number of 1 to 10, and m represents a number of 0 to 10.

13. The alkali-developable resist material according to claim 7 , wherein the compound (γ1) is at least one member selected from the group consisting of vinylcyclohexene oxide, allyl glycidyl ether, diallyl monoglycidyl isocyanurate and monoallyl diglycidyl isocyanurate.

14. The alkali-developable resist material according to claim 7 , wherein the compound (γ1) is a compound represented by the following general formula (IV):

wherein, R 6 and R 7 each represent an organic group having 1 to 6 carbon atoms, n represents a number of 1 to 3 and m represents a number of 0 to 10.

15. The alkali-developable resist material according to claim 7 , wherein the compound (γ1) is allyl (meth)acrylate and/or vinyl (meth)acrylate.

16. The alkali-developable resist material according to claim 1 , wherein the polysiloxane structure of the polysiloxane compound has a polyhedral backbone formed from 6 to 24 Si atoms in a molecule thereof.

17. The alkali-developable resist material according to claim 1 ,
wherein the photoacid generator is an onium salt.

18. The alkali-developable resist material according to claim 1 , wherein the curable composition further comprises a sensitizer.

Assignees

• Ide Masahito
• Manabe Takao
• Seino Makoto
• Kaneka Corp

Inventors

• Ide Masahito
• Manabe Takao
• Seino Makoto

Classifications

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6538

  by exposure to UV light · CPC title