Power amplifier module

Patent metadata

Field	Value
Publication number	US-9461594-B2
Application number	US-201514589376-A
Country	US
Kind code	B2
Filing date	Jan 5, 2015
Priority date	Feb 4, 2014
Publication date	Oct 4, 2016
Grant date	Oct 4, 2016

Abstract

Consumption current may be reduced in a power amplifier module in which a power supply voltage supplied to a power amplification transistor is controlled according to the level of output power. The power amplifier module includes an amplification transistor supplied with the power supply voltage according to the level of output power to amplify a radio-frequency signal, a bias control circuit for generating a bias voltage according to the power supply voltage, and a bias circuit for supplying a bias current according to the bias voltage to the amplification transistor, wherein current flowing through the amplification transistor when the radio-frequency signal is not input is varied according to the level of output power.

First claim

What is claimed is:

1. A power amplifier module comprising:
an amplification transistor supplied with a power supply voltage according to a level of output power to amplify a radio-frequency signal;
a bias control circuit for generating a bias voltage according to the power supply voltage, the bias control circuit including:
a temperature compensation circuit for generating an adjustment current varying according to temperature characteristics of the amplification transistor,
whereby the bias voltage according to the power supply voltage is adjusted based on the adjustment current; and

a bias circuit for supplying a bias current according to the bias voltage to the amplification transistor,
wherein a current flowing through the amplification transistor when the radio-frequency signal is not input is varied according to the level of output power.

2. The power amplifier module according to claim 1 , wherein the bias control circuit further includes:
a control current generating circuit for generating a control current according to the power supply voltage;
a control voltage generating circuit for generating a control voltage according to the power supply voltage based on the control current; and
a bias voltage generating circuit for generating the bias voltage based on the control voltage.

3. The power amplifier module according to claim 2 , wherein the control current generating circuit includes:
a differential current generating circuit for generating a differential current corresponding to a difference between a first reference voltage and the power supply voltage; and
a current mirror circuit for generating the control current as a mirror current of the differential current.

4. The power amplifier module according to claim 3 , wherein the differential current generating circuit includes:
a first N-channel FET with a gate supplied with the reference voltage;
a second N-channel FET with a gate supplied with the power supply voltage;
a first constant current source connected to a source of the first N-channel FET;
a second constant current source connected to a source of the second N-channel FET; and
a first resistor provided between the sources of the first and second N-channel FETs,
whereby the differential current is generated based on a current in a drain of the first N-channel FET.

5. The power amplifier module according to claim 2 , wherein the control current generating circuit includes:
an operational amplifier with the power supply voltage applied to one input terminal thereof; and
a second resistor with one end connected to another input terminal of the operational amplifier and another end grounded,
whereby the control current is generated based on a voltage applied to the one end of the second resistor.

6. The power amplifier module according to claim 5 , wherein the operational amplifier includes:
a first P-channel FET diode-connected;
a second P-channel FET current-mirror connected to the first P-channel FET;
a third N-channel FET with a drain connected to a drain of the first P-channel FET and a gate connected to the one end of the second resistor;
a fourth N-channel FET with a drain connected to a drain of the second P-channel FET and a gate supplied with the power supply voltage; and
a current source connected to sources of the third and fourth N-channel FETs.

7. The power amplifier module according to claim 2 , wherein the control current generating circuit includes:
a first NPN transistor with a collector and a base supplied with the power supply voltage;
a third resistor with one end connected to an emitter of the first NPN transistor and another end grounded;
a second NPN transistor with a base supplied with the power supply voltage; and
a fourth resistor with one end connected to an emitter of the second NPN transistor and another end grounded,
whereby the control current is generated based on a current in a collector of the second NPN transistor.

8. The power amplifier module according to claim 2 , wherein the control voltage generating circuit includes:
a reference current generating circuit for generating a reference current based on a second reference voltage; and
a current-voltage conversion circuit for converting, to the control voltage, a current obtained by subtracting the control current from the reference current or by adding the control current to the reference current.

9. The power amplifier module according to claim 2 , wherein the bias voltage generating circuit includes:
an amplifier circuit for amplifying the control voltage by an amplification factor corresponding to an output mode of the output power to generate the bias voltage.

10. The power amplifier module according to claim 9 , wherein the bias voltage generating circuit generates first and second bias voltages, the first bias voltage having a non-zero voltage and the second bias voltage having a zero voltage in a low-power output mode, and the first and second bias voltages both having a non-zero voltage in a high-power output mode.

11. A power amplifier module comprising:
an amplification transistor supplied with a power supply voltage according to a level of output power to amplify a radio-frequency signal;
a bias control circuit for generating a bias voltage according to the power supply voltage, the bias control circuit including:
a control current generating circuit for generating a control current according to the power supply voltage;
a control voltage generating circuit for generating a control voltage according to the power supply voltage based on the control current; and
a bias voltage generating circuit for generating the bias voltage based on the control voltage; and

a bias circuit for supplying a bias current according to the bias voltage to the amplification transistor,
wherein a current flowing through the amplification transistor when the radio-frequency signal is not input is varied according to the level of output power,
wherein the control current generating circuit includes:
a differential current generating circuit for generating a differential current corresponding to a difference between a first reference voltage and the power supply voltage; and
a current mirror circuit for generating the control current as a mirror current of the differential current.

12. The power amplifier module according to claim 11 , wherein the control current generating circuit includes:
an operational amplifier with the power supply voltage applied to one input terminal thereof; and
a second resistor with one end connected to another input terminal of the operational amplifier and another end grounded,
whereby the control current is generated based on a voltage applied to the one end of the second resistor.

13. The power amplifier module according to claim 11 , wherein the control current generating circuit includes:
a first NPN transistor with a collector and a base supplied with the power supply voltage;
a third resistor with one end connected to an emitter of the first NPN transistor and another end grounded;
a second NPN transistor with a base supplied with the power supply voltage; and
a fourth resistor with one end connected to an emitter of the second NPN transistor and another end grounded,
whereby the control current is generated based on a current in a collector of the second NPN transistor.

14. The power amplifier module according to claim 11 , wherein the differential current generating circuit includes:
a first N-channel FET with a gate supplied with the reference voltage;
a second N-channel FET with a gate supplied with the power supply voltag

Assignees

• Murata Manufacturing Co

Inventors

• Tabei Makoto

Classifications

• H03F1/301

  in MOSFET amplifiers (H03F1/303, H03F1/305, H03F1/308 take precedence) · CPC title

• H03F3/45179

  using MOSFET transistors as the active amplifying circuit (H03F3/45278 takes precedence) · CPC title

• H03F2203/45112

  the biasing of the differential amplifier being controlled from the input or the output signal · CPC title

• H03F2200/447

  the amplifier being protected to temperature influence · CPC title

• H03F3/195

  in integrated circuits · CPC title