Semiconductor device

Patent metadata

Field	Value
Publication number	US-9461002-B2
Application number	US-201514874189-A
Country	US
Kind code	B2
Filing date	Oct 2, 2015
Priority date	Dec 3, 2014
Publication date	Oct 4, 2016
Grant date	Oct 4, 2016

Abstract

A semiconductor device and a method of making the same. The semiconductor device includes a semiconductor substrate mounted on a carrier. The semiconductor substrate includes a Schottky diode. The Schottky diode has an anode and a cathode. The semiconductor device also includes one or more bond wires connecting the cathode to a first electrically conductive portion of the carrier. The semiconductor device further includes one or more bond wires connecting the anode to a second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is electrically isolated from the second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is configured to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device. Both the cathode and the first electrically conductive portion of the carrier are electrically isolated from a backside of the semiconductor substrate.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor substrate mounted on a carrier, the semiconductor substrate including a Schottky diode, the Schottky diode having an anode and a cathode;
one or more bond wires connecting the cathode to a first electrically conductive portion of the carrier; and
one or more bond wires connecting the anode to a second electrically conductive portion of the carrier,
wherein the first electrically conductive portion of the carrier is electrically isolated from the second electrically conductive portion of the carrier,
wherein the first electrically conductive portion of the carrier is configured to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device, and
wherein both the cathode and the first electrically conductive portion of the carrier are electrically isolated from a backside of the semiconductor substrate.

2. The semiconductor device of claim 1 , wherein the anode is electrically connected to the backside of the semiconductor substrate.

3. The semiconductor device of claim 2 , wherein the anode is electrically connected to the backside of the semiconductor substrate by an electrically conductive connection passing through the semiconductor substrate.

4. The semiconductor device of claim 3 , wherein the electrically conductive connection passing through the semiconductor substrate comprises a via filled with an electrically conductive material.

5. The semiconductor device of claim 2 , wherein the backside of the semiconductor substrate is mounted on an electrically conductive mounting portion that is isolated from both the cathode and the first electrically conductive portion of the carrier, and wherein the anode is electrically connected to said electrically conductive mounting portion.

6. The semiconductor device of claim 5 , wherein the anode is electrically connected to the electrically conductive mounting portion by a down-bond wire.

7. The semiconductor device of claim 1 , wherein the carrier comprises a lead frame.

8. The semiconductor device of claim 1 , wherein the carrier comprises a dielectric substrate having one or more metallized layers.

9. The semiconductor device of claim 1 , wherein the backside of the semiconductor substrate is electrically connected to an output connection for applying a potential to the backside of the substrate.

10. The semiconductor device of claim 1 , wherein the backside of the substrate is electrically isolated from the carrier by an intervening dielectric.

11. The semiconductor device of claim 1 , wherein the first electrically conductive portion of the carrier extends at least partially around a periphery of the substrate to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device.

12. The semiconductor device of claim 1 , wherein the first electrically conductive portion of the carrier extends at least partially beneath the substrate to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device.

13. The semiconductor device of claim 1 , wherein the Schottky diode is a GaN/AlGaN diode.

14. A power amplifier comprising the semiconductor device of claim 1 .

15. A method of making a semiconductor device, the method comprising:
mounting a semiconductor substrate on a carrier, the substrate including a Schottky diode, the Schottky diode having an anode and a cathode;
connecting the cathode to a first electrically conductive portion of the carrier using one or more bond wires; and
connecting the anode to a second electrically conductive portion of the carrier using one or more bond wires,
wherein the first electrically conductive portion of the carrier is electrically isolated from the second electrically conductive portion of the carrier,
wherein the first electrically conductive portion of the carrier is configured to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device, and
wherein both the cathode and the first electrically conductive portion of the carrier are electrically isolated from a backside of the semiconductor substrate.

Assignees

• Nxp Bv

Inventors

• Croon Jeroen Antoon
• Tak Coenraad Cornelis

Classifications

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/5449

  not being orthogonal to a side surface of the chip, e.g. fan-out arrangements · CPC title

• H10W72/07554

  changes in dispositions · CPC title

• H10W72/547

  Dispositions of multiple bond wires · CPC title